APT85GR120B2_L APT85GR120B2 APT85GR120L 1200V, 85A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 170 I C2 Continuous Collector Current @ TC = 100°C 85 I CM Pulsed Collector Current 340 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 962 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 10 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 2 Unit Volts 1000 μA ±250 nA 100 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6402 Rev A 8-2012 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT85GR120B2_L Parameter Cies Input Capacitance Coes Output Capacitance Test Conditions Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate- Collector Charge td(off) tf Capacitance 8400 VGE = 0V, VCE = 25V 725 f = 1MHz 190 Eon2 V 660 60 85 IC = 85A 230 320 Inductive Switching (25°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 300 85 IC = 85A Turn-On Switching Energy RG = 4.3 Ω 6000 9000 Turn-Off Switching Energy TJ = +25°C 3800 5700 td(on) Turn-On Delay Time tr td(off) Eon2 4 Inductive Switching (125°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 350 Current Fall Time tf nC ns Eoff 6 5 Unit pF 490 VCE= 600V Current Fall Time Max 7.5 Gate Charge Turn-On Delay Time tr Typ VGE = 15V Qge td(on) Min μJ ns 95 IC = 85A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 7800 11,700 4900 7350 Typ Max 4 μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min RθJC Junction to Case Thermal Resistance (IGBT) .13 RθJA Junction to Ambient Thermal Resistance 40 B2 WT Package Weight L Unit °C/W .22 oz 6 g .36 oz 10 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6402 D = 0.9 0.12 0.10 0.7 0.08 0.5 Note: 0.06 P DM ZθJC, THERMAL IMPEDANCE (°C/W) Rev A 8-2012 0.14 0.3 0.04 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.02 0.05 0 10 -5 SINGLE PULSE 10 -4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TYPICAL PERFORMANCE CURVES APT85GR120B2_L 120 200 V 180 80 60 40 20 = 15V 160 IC, COLLECTOR CURRENT (A) FREQUENCY (kHz) 100 GE TJ= - 55°C 140 TJ= 25°C 120 TJ= 125°C 100 80 TJ= 150°C 60 40 20 80 100 120 140 160 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75°C) 300 15V 13V 40 250 10V 200 9.0V 150 8.0V 100 7.5V 50 7V 6.5V 0 0 0 50 4 8 12 16 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Saturation Voltage Characteristics (TJ = 25°C) 6 5 4 IC = 85A 3 2 250 200 150 100 TJ= 150°C 50 0 TJ= 125°C TJ= 25°C 0 TJ= -55°C 1 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 6, Transfer Characteristics -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 6 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 5 4 IC = 170A 3 IC = 85A IC = 42.5A 2 1 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage 250 1.10 6 1.05 0.90 0.85 0.80 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 8, Threshold Voltage vs Junction Temperature 150 100 8-2012 0.95 200 50 0 Rev A 1.00 IC, DC COLLECTOR CURRENT (A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250μs PULSE TEST<0.5 % DUTY CYCLE IC = 42.5A 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4, Output Characteristics (TJ = 25°C) 300 IC = 170A -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) FIGURE 9, DC Collector Current vs Case Temperature 052-6402 IC, COLLECTOR CURRENT (A) 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 TYPICAL PERFORMANCE CURVES APT85GR120B2_L 2.0E−8 C, CAPACITANCE (F) 1.0E−8 1.0E−9 Coes Cres VGE, GATE-TO-EMITTER VOLTAGE (V) 18 Cies 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 10, Capacitance vs Collector-To-Emitter Voltage 180 SWITCHING TIME (ns) 100 80 Td(on) 60 2 100 200 300 400 GATE CHARGE (nC) FIGURE 11, Gate charge 500 Td(off) 300 250 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C 200 150 20 50 Tf 0 10 20 50 70 90 110 130 150 170 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-On Time vs Collector Current 20 40 60 80 100 120 140 160 180 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-Off Time vs Collector Current 16000 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C SWITCHING ENERGY LOSS (μJ) SWITCHING ENERGY LOSS (μJ) 15000 Eon2 10000 5000 Eoff 14000 Eon2 12000 10000 8000 Eoff 6000 4000 VCE = 600V, VGE=15V, IC = 85A TJ = 125°C 2000 0 0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Energy Loss vs Collector Current 0 10 20 30 40 50 RG, GATE RESISTANCE (Ω) FIGURE 15, Energy Loss vs Gate Resistance 500 Eon2 7000 6000 IC, COLLECTOR CURRENT (A) SWITCHING ENERGY LOSSES (μJ) 4 350 8000 8-2012 VCE = 960V 6 100 20000 Rev A 8 40 0 VCE = 600V 10 400 120 0 VCE = 240V 12 450 Tr 140 052-6402 14 0 SWITCHING TIME (ns) 160 J 0 1.0E−10 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C or 125°C I = 85A C T = 25°C 16 VCE = 600V, VGE=15V, RG = 4.3Ω IC = 85A 5000 Eoff 4000 3000 100 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Swiitching Energy vs Junction Temperature 1ms 10ms 1 0.1 0 100μs 10 1 10 100 1000 4000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 17, Minimum Switching Safe Operating Area APT85GR120B2_L T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Collector Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 2.29 (.090) 2.69 (.106) Gate Collector Emitter 8-2012 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) Rev A Collector 20.80 (.819) 21.46 (.845) Dimensions in Millimeters and (Inches) 052-6402 Collector 5.38 (.212) 6.20 (.244) APT85GR120B2_L 052-6402 Rev A 8-2012 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . 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