APT40GR120B_S
APT40GR120B
APT40GR120S
1200V, 40A, VCE(on)= 2.5V Typical
.
Ultra Fast NPT - IGBT®
(B)
The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior
ruggedness and ultrafast switching speed.
®
TO
-2
D 3 PA K
47
(S)
C
G
E
Features
G
• Low Saturation Voltage
• Short Circuit Withstand Rated
• Low Tail Current
• High Frequency Switching to 50KHz
• RoHS Compliant
• Ultra Low Leakage Current
C
E
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
Parameter
Ratings
Vces
Collector Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
88
I C2
Continuous Collector Current @ TC = 100°C
40
I CM
Pulsed Collector Current
160
SCWT
PD
TJ,TSTG
TL
1
Unit
V
A
Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C
10
μs
Total Power Dissipation @ TC = 25°C
500
W
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
1200
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Typ
Max
4.5
6.0
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C)
2.5
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C)
3.5
Collector-Emitter On Voltage (VGE = 15V, I C = 88A, Tj = 25°C)
3.2
(VCE = VGE, I C = 2.0mA, Tj = 25°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
3
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
10
2
2
Unit
Volts
1000
μA
±250
nA
100
Gate-Emitter Leakage Current (VGE = ±20V)
Microsemi Website - http://www.microsemi.com
052-6400
Rev A
3-2012
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate to Emitter Plateau Voltage
Qg
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate- Collector Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Test Conditions
Min
Typ
Capacitance
3980
VGE = 0V, VCE = 25V
320
f = 1MHz
80
Max
V
210
VGE = 15V
25
VCE= 600V
nC
90
IC = 40A
Inductive Switching (25°C)
22
VCC = 600V
25
Turn-Off Delay Time
VGE = 15V
163
ns
40
IC = 40A
Turn-On Switching Energy
RG = 4.3 Ω
1375
3000
Eoff 6
Turn-Off Switching Energy
TJ = +25°C
906
1650
td(on
Turn-On Delay Time
5
tr
td(off)
tf
4
Inductive Switching (125°C)
22
Current Rise Time
VCC = 600V
25
Turn-Off Delay Time
VGE = 15V
185
Current Fall Time
μJ
ns
47
IC = 40A
5
Turn-On Switching Energy
RG = 4.3 Ω
Eoff 6
Turn-Off Switching Energy
TJ = +125°C
Eon2
Unit
pF
7
Gate Charge
Current Rise Time
Current Fall Time
Eon2
APT40GR120B_S
4
1916
3500
1186
2500
Typ
Max
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
Min
RθJC
Junction to Case Thermal Resistance
.25
RθJA
Junction to Ambient Thermal Resistance
40
WT
Package Weight
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Unit
°C/W
.22
oz
6.2
g
10
in-lbf
6.2
N∙m
052-6400
Rev A
3-2012
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT40GR120B_S
80
300
V
GE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
TJ= - 55°C
60
TJ= 25°C
50
13V
10V
15V
= 15V
70
TJ= 125°C
40
TJ= 150°C
30
20
10
9V
200
150
8V
100
7V
50
6V
0
1
2
3
4
5
6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
4.5
4.0
IC = 40A
3.5
3.0
IC = 20A
2.5
2.0
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
1.5
1.0
-50
-25
0
25
50
75
100
IC = 80A
IC = 40A
3
IC = 20A
2
1
24
28
32
250μs PULSE
TEST<0.5 % DUTY
CYCLE
150
100
50
0
TJ= 25°C
0
TJ= -55°C
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, Transfer Characteristics
1.10
1.05
1.00
0.95
0.90
0.85
6
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 6, Threshold Voltage vs Junction Temperature
18
100
80
60
40
20
0
25
50
75
100
125 150
TC, Case Temperature (°C)
FIGURE 7, DC Collector Current vs Case Temperature
I = 40A
C
T = 25°C
16
J
14
VCE = 240V
12
VCE = 600V
10
8
VCE = 960V
3-2012
VGE, GATE-TO-EMITTER VOLTAGE (V)
120
IC, DC COLLECTOR CURRENT (A)
20
0.80
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
0
16
6
4
Rev A
0
12
200
125
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
4
8
TJ= 125°C
TJ, Junction Temperature (°C)
FIGURE 3, On State Voltage vs Junction Temperature
6
5
4
2
0
0
100
200
GATE CHARGE (nC)
FIGURE 8, Gate charge
300
052-6400
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
250
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
IC = 80A
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5.0
0
IC, COLLECTOR CURRENT (A)
0
TYPICAL PERFORMANCE CURVES
APT40GR120B_S
1.0E−8
C, CAPACITANCE (pF)
Cies
APT30DQ120
1.0E−9
V CE
IC
V CC
Coes
1.0E−10
A
Cres
D.U.T.
1.0E−11
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 9, Capacitance vs Collector-To-Emitter Voltage
100
FIGURE 10, Inductive Switching Test Circuit
1000
Td(on)
10
Td(off)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
Tr
100
Tf
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C or 125°C
1
10
10
20
30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Turn-On Time vs Collector Current
1000
Eoff
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
SWITCHING ENERGY LOSS (μJ)
SWITCHING ENERGY LOSS (μJ)
50
60
70
80
90
Eoff
1000
700
10
20 30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Energy Loss vs Collector Current
VCE = 600V, VGE=15V, IC = 40A
TJ = 125°C
0
10
20
30
40
50
RG, GATE RESISTANCE (Ω)
FIGURE 14, Energy Loss vs Gate Resistance
300
Eon2
1000
Eoff
VCE = 600V, VGE=15V, RG = 4.3Ω
IC = 40A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Energy Losses vs Junction Temperature
IC, COLLECTOR CURRENT (A)
SWITCHING ENERGY LOSSES (μJ)
3-2012
Rev A
40
Eon2
10000
052-6400
30
5000
Eon2
100
20
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-Off Time vs Collector Current
10000
100
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
100
10
100μs
1ms
100ms
10ms
1
0.1
1
10
100
1000 2000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 16, Minimum Switching Safe Operating Area
TYPICAL PERFORMANCE CURVES
APT40GR120B_S
0.25
D = 0.9
0.20
0.7
0.15
0.5
0.10
Note:
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
0.3
t1
t2
0.05
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
SINGLE PULSE
0.05
0
10
-4
10
10-2
-3
0.1
1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TO-247 Package Outline
D3PAK Package Outline
e3 SAC: 100% Sn Plating
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Collector
(Heat Sink)
e3 SAC: 100% Sn Plating
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Collector
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches
)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
3.81 (.150)
4.06 (.160)
(Base of Lead )
Heat Sink (Collector)
and Leads are Plated
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
3-2012
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
Rev A
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
052-6400
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.