APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 1. Introduction This application note is a migration guide for comparing the Toshiba TC58NVG2S0F with the Macronix MX30LF4G28AB 4Gb SLC NAND Flash. The document does not provide detailed information on the individual devices, but highlights the major similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information in this document is based on datasheets listed in Section 8. Newer versions of the datasheets may override the contents of this document. 2. General Features The two devices have a different page size and block size. Feature differences are highlighted in Bold Italic type in Table 2-1. Table 2-1. Key Feature Comparison Brand Part Number Voltage Bus Width Operating Temperature ONFI Interface Memory Cell Array Plane Size Page Size Block Size Cache Read/Program ECC requirement OTP Unique ID Guaranteed Good Blocks at shipping Data Retention Endurance Valid Block Number Package P/N: AN0273 Toshiba TC58NVG2S0F 2.7V - 3.6V x8 -40°C to 85°C N/A (512M+28M) x 8 bits 2 Planes x 1024 Blocks/Plane (4K+224)B (256K+14K)B (4K+224)B 4bit/512B N/A N/A Block#0 Not Specified Not Specified 2008 (Min.) / 2048 (Max.) 48TSOP (12x20mm) 63-VFBGA (9x11mm) 1 Macronix MX30LF4G28AB 2.7V - 3.6V x8 -40°C to 85°C ONFI 1.0 Compliant (512M+28M) x 8 bits 2 Planes x 2048 Blocks/Plane (2K+112)B (128K+7K)B (2K+112)B 8bit/540B 30 Pages ONFI Standard Block#0 10 Years 100K Cycles 4016 (Min.) / 4096 (Max.) 48TSOP (12x20mm) 63-VFBGA (9x11mm) REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 3. Electrical Performance There are some minor performance differences between the two devices which are highlighted in Bold Italic in Table 3-1. Table 3-1. Key Performance Comparison Brand Part Number Performance Random (tR) Cache Read Access Time Busy time Sequential Page Program Program Time Cache Program Busy time Erase Time Block Standby (TTL) Standby (CMOS) Active Read Active Program/Erase Current Consumption Power-up Current (Including POR Current) Input Leakage Output Leakage Partial-Page Programs P/N: AN0273 NOP Min. - Toshiba TC58NVG2S0F Typ. Max. 30us Macronix MX30LF4G28AB Min. Typ. Max. 25us - - - 30us - 2us 25us 25ns - 300us 700us 20ns - 300us 600us - - 700us - 3us 600us - 3ms - 10ms 50uA 30mA - - - 30mA - 1ms 10uA 20mA 20mA/ 15mA 10ms 1mA 50uA 30mA 30mA/ 30mA - - - - - 30mA - - +/- 10uA +/- 10uA - - +/- 10uA +/- 10uA - - 4 cycles - - 4 cycles 2 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 4. Command Set Command Set differences are highlighted in Bold Italic type in Table 4-1 as below: Table 4-1. Command Set Brand Part Number Command Description Read Random Data Input Random Read Data Output Cache Read Random Cache Read Sequential Cache Read End Read ID Parameter Page Read (ONFI) Read Unique ID (ONFI) Get Features (ONFI) Set Features (ONFI) Reset Page Program Cache Program Page Program with 2KB Data(Note1) Copy-back Program with 2KB Data(Note1) Block Erase Read Status Resister Status Enhanced Read Toshiba TC58NVG2S0F 1st cmd Cycle 00h 85h 05h 31h 3Fh 90h FFh 80h 80h 80h-11h 85h-11h 60h 70h (Note2) 71h OTP Area Access Two-plane Program Two-plane Cache Program (ONFI) Two-plane Block Erase (ONFI) Read for Page Copy(2) with Data (Note3) Auto Program with Data Cache during Page Copy(2)(Note3) Auto Program for last page during Page Copy(2)(Note3) 2nd cmd Cycle 30h E0h 10h 15h 80h-10h 80h-10h D0h - 80h-11h/81h-15h/81h-10h 00h 3Ah Macronix MX30LF4G28AB 1st cmd Cycle 2nd cmd Cycle 00h 30h 85h 05h E0h 00h 31h 31h 3Fh 90h ECh EDh EEh EFh FFh 80h 10h 80h 15h 60h D0h 70h 78h Set Feature followed by normal read/program command 80h-11h 80h-10h 80h-11h 80h-15h 60h-D1h 60h-D0h - 8Ch 15h - - 8Ch 10h - - Notes: 1. The additional command to program with 2KB data for TC58NVG2G0F is not necessary for MX30LF4G28AB since the page program command can program 2KB data. 2. The 71h command is status read for multi-Page Program or Multi Block Erase, which has the similar purpose with the 78h command of MX30LF4G28AB. 3. Toshiba proprietary command P/N: AN0273 3 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 5. Status Register Comparison (70h command) The Status Register bits are compatible (Table 5-1). However, the 2nd status register for the multi-plane is slightly different (Table 5-2). The 2nd status register of TC58NVG2S0F uses the I/O [5:1] bits to provide multiplane status, while the MX30LF4G28AB uses SR[1:0] when using the status enhanced read command (78h). Please refer to their individual datasheet for more details. Table 5-1. Status Register Comparison Brand Part Number I/O1 I/O2 I/O3 I/O4 I/O5 Toshiba TC58NVG2S0F Program/Erase Pass or Fail Cache Program Pass or Fail Not Used Not Used Not Used Brand Part Number SR[0] SR[1] SR[2] SR[3] SR[4] Macronix I/O6 Ready/Busy for Page Buffer SR[5] Ready/Busy for Internal Controller Program/Erase/Read Operation I/O7 I/O8 Ready/Busy for Data Cache Write Protect SR[6] SR[7] Ready/Busy Write Protect Brand Part Number Command SR[0](Note1) SR[1](Note1) SR[2] SR[3] SR[4] (Note2) SR[5] (Note2) SR[6] SR[7] Macronix MX30LF4G28AB 78h Program/Erase(Pass/Fail) Cache Program(Pass/Fail) Not Used Not Used Not Used Ready/Busy (P/E/R controller) Ready/Busy Write Protect MX30LF4G28AB Program/Erase Pass or Fail Cache Program Pass or Fail Not Used Not Used Not Used Table 5-2. Status Register for Multi-plane Brand Part Number Command I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 Toshiba TC58NVG2S0F 71h Chip Status1 (Pass/Fail) District 0 Chip status1 (Pass/Fail) District 1 Chip status1 (Pass/Fail) District 0 Chip status2 (Pass/Fail) District 1 Chip status2 (Pass/Fail) Ready/Busy Data Cache Ready/Busy Write Protect Note 1: SR [0:1] are for the status of specific plane in the row address. Note 2: SR [5:6] shared with all planes. P/N: AN0273 4 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 6. Package Pin/Ball Definition The TC58NVG2S0F can be compared with the MX30LF4G28AB without pin conflicts because the differences are with the DNU (Do Not Use) and NC (No Connect = Not Bonded) pins. The differences in VCC/VSS pins are also not an issue as they are for ONFI compatibility, and are not internally bonded. (See Table 6-1 and 6-2). The functions of the TC58NVG2S0F and MX30LF4G28AB I/O pins are the same but their naming is different. The TC58NVG2S0F has its I/O pins named IO1 to IO8, whereas the MX30LF4G28AB has its I/O pins named IO0 to IO7. Table 6-1. 48-TSOP Package Pin Definition Brand Toshiba Part Number TC58NVG2S0F #48 pin NC #39 pin NC #38 pin NC #34 pin NC #25 pin NC Macronix MX30LF4G28AB VSS (might not be bonded, just for ONFI compatibility) VCC (might not be bonded, just for ONFI compatibility) DNU VCC (might not be bonded, just for ONFI compatibility) VSS (might not be bonded, just for ONFI compatibility) Table 6-2. 63-VFBGA Package Ball Definition Brand Toshiba Part Number TC58NVG2S0F #D3 ball NC #G4 ball NC #G5 ball NC #F7 ball NC P/N: AN0273 Macronix MX30LF4G28AB VCC (might not be bonded, just for ONFI compatibility) VCC (might not be bonded, just for ONFI compatibility) DNU VSS (might not be bonded, just for ONFI compatibility) 5 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 7. Device Identification The ID codes of the TC58NVG2S0F and MX30LF4G28AB are different (Table 7-1). Table 7-1. Device Identification Band Part Number ID Code 1st Byte 2nd Byte bit 1- 0 bit 3 - 2 3rd Byte ID Definition 4th Byte bit 5 - 4 bit 6 bit 7 bit 1- 0 bit 2 bit 7, 3 bit 5 - 4 bit 6 bit 1- 0 5th Byte bit 3 - 2 bit 6 - 4 bit 7 Toshiba TC58NVG2S0F 98h/DCh/00h/22h/64h Manufacturer ID Device ID Number of Die per CE Cell Structure Macronix MX30LF4G28AB C2h/DCh/90h/95h/57h Manufacturer ID Device ID Number of Die per CE Cell Structure Number of Concurrently Programmed Pages Interleaved Programming between multiple devices Cache program Page Size Page Size Spare Area Size Sequential Read Cycle Time Block Size (Excluding spare area) Block Size (Excluding spare area) Organization ECC level requirement, 8-bit ECC required (bit1:0=11b) Plane number Plane number Plane Size (Excluding spare area) Reserved - 8. References Table 8-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix Website at http://www.macronix.com. Table 8-1. Datasheet Versions Data sheet MX30LF4G28AB TC58NVG2S0FBAI4 TC58NVG2S0FTAI0 P/N: AN0273 Location Website Website Website Date Issued June 2014 Sept. 2012 Sept. 2012 6 Revision Rev. 1.1 Rev. 1.1 Rev. 1.5 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 9. Summary The Macronix MX30LF4G28AB and Toshiba TC58NVG2S0F NAND flash share the same basic Read, Program, and Erase commands, also have similar pinouts. Firmware changes may be needed to accommodate differences in page size, block size and ECC requirements. 10. Part Number Cross Reference Table 10-1. Part Number Cross Reference Bus Width Voltage Package 63-VFBGA x8 3.3V 48-TSOP Toshiba Part Number TC58NVG2S0FBAI4 TC58NVG2S0FTAI0 Macronix Part Number MX30LF4G28AB-XKI MX30LF4G28AB-TI 11. Revision History Table 11-1. Revision History Revision No. Description Page Date REV. 1 REV. 2 Initial Release Table 3-1 values revised to match Macronix Rev1.1 datasheet ALL 2 Dec. 17, 2013 Jun. 10, 2014 P/N: AN0273 7 REV. 3, JUN. 10, 2014 APPLICATION NOTE Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Website at: http://www.macronix.com P/N: AN0273 8 REV. 3, JUN. 10, 2014