Replacing Toshiba TC58NVG2S0F with Macronix MX30LF4G28AB

APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
1. Introduction
This application note is a migration guide for replacing the Toshiba TC58NVG2S0F with the Macronix
MX30LF4G28AB 4Gb SLC NAND Flash. The document does not provide detailed information on the individual
devices, but highlights the major similarities and differences between them. The comparison covers the general
features, performance, command codes and other differences.
The information in this document is based on datasheets listed in Section 8. Newer versions of the datasheets may
override the contents of this document.
2. General Features
The two devices have a different page size and block size. Feature differences are highlighted in Bold Italic
type in Table 2-1.
Table 2-1. Key Feature Comparison
Brand
Part Number
Toshiba
TC58NVG2S0F
Macronix
MX30LF4G28AB
Voltage
2.7V - 3.6V
2.7V - 3.6V
Bus Width
x8
x8
Operating Temperature
-40°C to 85°C
-40°C to 85°C
ONFI Interface
N/A
ONFI 1.0 Compliant
Memory Cell Array
(512M+28M) x 8 bits
(512M+28M) x 8 bits
Plane Size
2 Planes x 1024 Blocks/Plane
2 Planes x 2048 Blocks/Plane
Page Size
(4K+224)B
(2K+112)B
Block Size
(256K+14K)B
(128K+7K)B
Cache Read/Program
(4K+224)B
(2K+112)B
ECC requirement
4bit/512B
8bit/540B
OTP
N/A
30 Pages
Unique ID
N/A
ONFI Standard
Guaranteed Good Blocks at shipping
Block#0
Block#0
Data Retention
Not Specified
10 Years
Endurance
Not Specified
100K Cycles
Valid Block Number
2008 (Min.) / 2048 (Max.)
4016 (Min.) / 4096 (Max.)
Package
48TSOP (12x20mm)
63-VFBGA (9x11mm)
48TSOP (12x20mm)
63-VFBGA (9x11mm)
P/N: AN0273
1
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
3. Electrical Performance
There are some minor performance differences between the two devices which are highlighted in Bold Italic
in Table 3-1.
Table 3-1. Key Performance Comparison
Brand
Part Number
Performance
Access Time
Toshiba
TC58NVG2S0F
Macronix
MX30LF4G28AB
Min.
Typ.
Max.
Min.
Typ.
Max.
Random (tR)
-
-
30us
-
-
25us
Cache Read
Busy time
-
-
30us
-
2us
25us
Sequential
25ns
-
-
20ns
600us
Page Program
-
300us
700us
-
300us
Program Time
Cache Program
Busy time
-
-
700us
-
3us
600us
Erase Time
Block
-
3ms
10ms
-
1ms
10ms
Current
Consumption
Partial-Page
Programs
P/N: AN0273
Standby (TTL)
-
-
-
-
-
1mA
Standby (CMOS)
-
-
50uA
-
10uA
50uA
Active Read
-
-
30mA
-
20mA
30mA
Active
Program/Erase
-
-
30mA
Power-up Current
(Including POR
Current)
-
-
-
-
-
30mA
-
20mA/ 15mA 30mA/ 30mA
Input Leakage
-
-
+/- 10uA
-
-
+/- 10uA
Output Leakage
-
-
+/- 10uA
-
-
+/- 10uA
NOP
-
-
4 cycles
-
-
4 cycles
2
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
4. Command Set
Command Set differences are highlighted in Bold Italic type in Table 4-1 as below:
Table 4-1. Command Set
Brand
Toshiba
Macronix
Part Number
TC58NVG2S0F
MX30LF4G28AB
Command Description
1st cmd Cycle
2nd cmd Cycle
1st cmd Cycle
2nd cmd Cycle
Read
00h
30h
00h
30h
Random Data Input
85h
-
85h
-
Random Read Data Output
05h
E0h
05h
E0h
-
-
00h
31h
Cache Read Sequential
31h
-
31h
-
Cache Read End
3Fh
-
3Fh
-
Read ID
90h
-
90h
-
Parameter Page Read (ONFI)
-
-
ECh
-
Read Unique ID (ONFI)
-
-
EDh
-
Get Features (ONFI)
-
-
EEh
-
Set Features (ONFI)
-
-
EFh
-
Cache Read Random
Reset
FFh
-
FFh
-
Page Program
80h
10h
80h
10h
Cache Program
80h
15h
80h
15h
80h-11h
80h-10h
-
-
85h-11h
80h-10h
-
-
Block Erase
60h
D0h
60h
D0h
Read Status Resister
70h
-
70h
-
-
78h
-
Page Program with 2KB Data
(Note1)
Copy-back Program with 2KB Data
(Note1)
Status Enhanced Read
71h
(Note2)
OTP Area Access
Set Feature followed by normal
read/program command
-
Two-plane Program
80h-11h/81h-15h/81h-10h
80h-11h
80h-10h
Two-plane Cache Program (ONFI)
-
-
80h-11h
80h-15h
Two-plane Block Erase (ONFI)
-
-
60h-D1h
60h-D0h
Read for Page Copy(2) with Data Out
(Note3)
00h
3Ah
-
-
Auto Program with Data Cache during
(Note3)
Page Copy(2)
8Ch
15h
-
-
Auto Program for last page during
(Note3)
Page Copy(2)
8Ch
10h
-
-
Notes:
1. The additional command to program with 2KB data for TC58NVG2G0F is not necessary for MX30LF4G28AB since the
page program command can program 2KB data.
2. The 71h command is status read for multi-Page Program or Multi Block Erase, which has the similar purpose with the 78h
command of MX30LF4G28AB.
3. Toshiba proprietary command
P/N: AN0273
3
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
5. Status Register Comparison (70h command)
The Status Register bits are compatible (Table 5-1). However, the 2nd status register for the multi-plane is slightly
different (Table 5-2). The 2nd status register of TC58NVG2S0F uses the I/O [5:1] bits to provide multi- plane status,
while the MX30LF4G28AB uses SR[1:0] when using the status enhanced read command (78h). Please refer to their
individual datasheet for more details.
Table 5-1. Status Register Comparison
Brand
Toshiba
Part Number
TC58NVG2S0F
Brand
Part Number
Macronix
MX30LF4G28AB
I/O1
Program/Erase Pass or Fail
SR[0]
Program/Erase Pass or Fail
I/O2
Cache Program Pass or Fail
SR[1]
Cache Program Pass or Fail
I/O3
Not Used
SR[2]
Not Used
I/O4
Not Used
SR[3]
Not Used
I/O5
Not Used
SR[4]
Not Used
I/O6
Ready/Busy for Page Buffer
SR[5]
Ready/Busy for Internal Controller
Program/Erase/Read Operation
I/O7
Ready/Busy for Data Cache
SR[6]
Ready/Busy
I/O8
Write Protect
SR[7]
Write Protect
Brand
Part Number
Macronix
MX30LF4G28AB
Command
78h
Table 5-2. Status Register for Multi-plane
Brand
Toshiba
Part Number
TC58NVG2S0F
Command
71h
SR[0]
(Note1)
Program/Erase(Pass/Fail)
I/O1
Chip Status1 (Pass/Fail)
I/O2
District 0 Chip status1 (Pass/Fail)
SR[1](Note1)
Cache Program(Pass/Fail)
I/O3
District 1 Chip status1 (Pass/Fail)
SR[2]
Not Used
I/O4
District 0 Chip status2 (Pass/Fail)
SR[3]
Not Used
I/O5
District 1 Chip status2 (Pass/Fail)
I/O6
Ready/Busy
I/O7
Data Cache Ready/Busy
SR[6](Note2)
Ready/Busy
I/O8
Write Protect
SR[7]
Write Protect
SR[4]
SR[5]
(Note2)
Not Used
Ready/Busy (P/E/R controller)
Note 1: SR [0:1] are for the status of specific plane in the row address.
Note 2: SR [5:6] shared with all planes.
P/N: AN0273
4
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
6. Package Pin/Ball Definition
The TC58NVG2S0F can be replaced with the MX30LF4G28AB without pin conflicts because the differences are with
the DNU (Do Not Use) and NC (No Connect = Not Bonded) pins. The differences in VCC/VSS pins are also not an
issue as they are for ONFI compatibility, and are not internally bonded. (See Table 6-1 and 6-2).
The functions of the TC58NVG2S0F and MX30LF4G28AB I/O pins are the same but their naming is different. The
TC58NVG2S0F has its I/O pins named IO1 to IO8, whereas the MX30LF4G28AB has its I/O pins named IO0 to IO7.
Table 6-1. 48-TSOP Package Pin Definition
Brand
Part Number
Toshiba
Macronix
TC58NVG2S0F
MX30LF4G28AB
#48 pin
NC
VSS (might not be bonded, just for ONFI compatibility)
#39 pin
NC
VCC (might not be bonded, just for ONFI compatibility)
#38 pin
NC
DNU
#34 pin
NC
VCC (might not be bonded, just for ONFI compatibility)
#25 pin
NC
VSS (might not be bonded, just for ONFI compatibility)
Table 6-2. 63-VFBGA Package Ball Definition
Brand
Part Number
Toshiba
Macronix
TC58NVG2S0F
MX30LF4G28AB
#D3 ball
NC
VCC (might not be bonded, just for ONFI compatibility)
#G4 ball
NC
VCC (might not be bonded, just for ONFI compatibility)
#G5 ball
NC
DNU
#F7 ball
NC
VSS (might not be bonded, just for ONFI compatibility)
P/N: AN0273
5
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
7. Device Identification
The ID codes of the TC58NVG2S0F and MX30LF4G28AB are different (Table 7-1).
Table 7-1. Device Identification
Band
Part Number
Toshiba
Macronix
TC58NVG2S0F
MX30LF4G28AB
bit 3 - 2
98h/DCh/00h/22h/64h
Manufacturer ID
Device ID
Number of Die per CE
Cell Structure
C2h/DCh/90h/95h/57h
Manufacturer ID
Device ID
Number of Die per CE
Cell Structure
bit 5 - 4
-
bit 6
bit 6
Page Size
Block Size (Excluding spare area)
-
bit 1- 0
-
ECC level requirement,
8-bit ECC required (bit1:0=11b)
bit 3 - 2
Plane number
-
Plane number
Plane Size (Excluding spare area)
Reserved
ID Code
1st Byte
2nd Byte
bit 1- 0
rd
3 Byte
bit 7
bit 1- 0
ID Definition
bit 2
th
4 Byte
bit 7, 3
bit 5 - 4
th
5 Byte
bit 6 - 4
bit 7
Number of Concurrently
Programmed Pages
Interleaved Programming
between
Cache
program
Page Size
Spare Area Size
Sequential Read Cycle Time
Block Size (Excluding spare area)
Organization
8. References
Table 8-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed
Macronix specification, please refer to the Macronix Website at http://www.macronix.com.
Table 8-1. Datasheet Versions
Data sheet
P/N: AN0273
Location
Date Issued
Revision
MX30LF4G28AB
Website
June 2014
Rev. 1.1
TC58NVG2S0FBAI4
Website
Sept. 2012
Rev. 1.1
TC58NVG2S0FTAI0
Website
Sept. 2012
Rev. 1.5
6
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
9. Summary
The Macronix MX30LF4G28AB and Toshiba TC58NVG2S0F NAND flash share the same basic Read, Program, and
Erase commands, also have similar pinouts. Firmware changes may be needed to accommodate differences in
page size, block size and ECC requirements.
10. Part Number Cross Reference
Table 10-1. Part Number Cross Reference
Bus Width
Voltage
x8
3.3V
Package
Toshiba Part Number
Macronix Part Number
63-VFBGA
TC58NVG2S0FBAI4
MX30LF4G28AB-XKI
48-TSOP
TC58NVG2S0FTAI0
MX30LF4G28AB-TI
11. Revision History
Table 11-1. Revision History
Revision No.
Description
Page
Date
REV. 1
Initial Release
ALL
Dec. 17, 2013
REV. 2
Table 3-1 values revised to match
Macronix Rev1.1 datasheet
2
Jun. 10, 2014
P/N: AN0273
7
REV. 2, JUN. 10, 2014
APPLICATION NOTE
Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are
designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only,
and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property
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Copyright© Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and tradename thereof,
such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash,
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For the contact and order information, please visit Macronix’s Website at: http://www.macronix.com
P/N: AN0273
8
REV. 2, JUN. 10, 2014