PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 7.5mΩ G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings ID = 75A S TO-220AB IRF1010ZPbF D2Pak TO-262 IRF1010ZSPbF IRF1010ZLPbF Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 94 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM 75 360 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) 0.90 ± 20 W/°C V 130 mJ 66 c d c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range -55 to + 175 °C Mounting Torque, 6-32 or M3 screw i Parameter RθJC Junction-to-Case RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient www.irf.com Junction-to-Ambient (PCB Mount) A mJ Thermal Resistance i 180 See Fig.12a, 12b, 15, 16 g Soldering Temperature, for 10 seconds RθJA h A i j 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units ––– 1.11 °C/W 0.50 ––– ––– 62 ––– 40 1 07/06/10 IRF1010Z/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 5.8 7.5 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 gfs IDSS Forward Transconductance 33 ––– Drain-to-Source Leakage Current ––– ––– ––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 63 95 Qgs Gate-to-Source Charge ––– 19 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 24 ––– VGS = 10V td(on) Turn-On Delay Time ––– 18 ––– VDD = 28V tr Rise Time ––– 150 ––– td(off) Turn-Off Delay Time ––– 36 ––– tf Fall Time ––– 92 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– Between lead, LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Input Capacitance ––– 2840 ––– and center of die contact VGS = 0V Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Coss Output Capacitance ––– 1630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 360 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 560 ––– VGS = 0V, VDS = 0V to 44V IGSS V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A e V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 75A 20 µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V ID = 75A nC VDS = 44V e ID = 75A ns nH RG = 6.8 Ω e VDS = 25V pF ƒ = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 ISM (Body Diode) Pulsed Source Current ––– ––– 360 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 22 33 ns Qrr Reverse Recovery Charge ––– 15 23 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF1010Z/S/LPbF 1000 1000 VGS 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS TOP 10 4.5V 1 0.1 10 100 4.5V 20µs PULSE WIDTH Tj = 25°C 1 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100 T J = 25°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20µs PULSE WIDTH Tj = 175°C T J = 175°C 100 10 VDS = 25V 20µs PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 175°C 80 60 T J = 25°C 40 20 VDS = 10V 20µs PULSE WIDTH 0 11.0 0 20 40 60 80 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF1010Z/S/LPbF 5000 VGS, Gate-to-Source Voltage (V) C rss = C gd 4000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd 3000 Ciss 2000 1000 Coss Crss VDS= 44V VDS= 28V 16 12 8 4 0 0 1 ID= 75A 10 0 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175°C 10.0 T J = 25°C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.0 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.8 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 100µsec 10 1msec 1 0.1 Tc = 25°C Tj = 175°C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1010Z/S/LPbF 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010Z/S/LPbF 250 DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS tp EAS, Single Pulse Avalanche Energy (mJ) 15V A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp TOP 200 BOTTOM ID 31A 53A 75A 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K VCC VGS(th) Gate threshold Voltage (V) 10 V ID = 250µA 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF1010Z/S/LPbF Avalanche Current (A) 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A EAR , Avalanche Energy (mJ) 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 7 IRF1010Z/S/LPbF D.U.T Driver Gate Drive + • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1010Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE AS SEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF1010Z/S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IF IE R LOGO ASSE MBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNAT IONAL RECTIF IER LOGO ASSEMBLY LOT CODE PART NUMBER F 530S DAT E CODE P = DESIGNAT ES LEAD - F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF1010Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE AS SEMBLY LINE "C" INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRF1010Z/S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. TO-220AB 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 package is not recommended for Surface Mount Application. Notes: Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25°C, L = 0.05mH This value determined from sample failure population. 100% RG = 25Ω, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 12 www.irf.com