MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • • • • Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 60 VOLTS Mechanical Characteristics: • • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Marking: B26 SMB CASE 403A PLASTIC MARKING DIAGRAM B26 B26 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (At Rated VR, TL = 95°C) IO 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A Tstg, TC -55 to +150 °C TJ -55 to +125 °C dv/dt 10,000 V/s Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Semiconductor Components Industries, LLC, 2003 January, 2003 - Rev. 1 ORDERING INFORMATION Device 1 MBRS260T3 Package Shipping SMB 2500/Tape & Reel Publication Order Number: MBRS260T3/D MBRS260T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL RθJA 24 80 °C/W Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A) (iF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 60 V) TJ = 25°C TJ = 125°C 0.51 0.63 0.475 0.55 TJ = 25°C TJ = 125°C 0.2 10 Volts mA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 75°C 125°C 25°C 1 0.1 75°C 125°C 25°C 1 0.1 0.1 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E-02 100 IR, REVERSE CURRENT (AMPS) 125°C 25°C f = 1 MHz C, CAPACITANCE (pF) 1.0E-03 75°C 1.0E-04 1.0E-05 25°C 1.0E-06 1.0E-07 10 0 10 20 30 40 50 60 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 50 60 RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) MBRS260T3 3.5 dc 3 2.5 2 SQUARE WAVE 1.5 1 0.5 0 60 70 80 90 100 110 120 130 2 1.8 1.6 dc 1.4 1.2 1 SQUARE WAVE 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2.5 2 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating - Junction to Lead Figure 6. Forward Power Dissipation 3 1.0E+00 50% 1.0E-01 20% 10% 5.0% 1.0E-02 2.0% 1.0% 1.0E-03 Rtjl(t) = Rtjl*r(t) 1.0E-04 1.0E+00 1.0E-01 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 t, TIME (s) Figure 7. Thermal Response - Junction to Case 50% 20% 10% 5.0% 1.0E-02 2.0% 1.0E-03 1.0% Rtjl(t) = Rtjl*r(t) 1.0E-04 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 8. Thermal Response - Junction to Ambient http://onsemi.com 3 MBRS260T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A-03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 C K P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H J MINIMUM SOLDER PAD SIZES 0.089 2.261 inches 0.108 2.743 mm 0.085 2.159 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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