NSS40302P D

NSS40302PDR2G
Complementary 40 V, 6.0 A,
Low VCE(sat) Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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40 VOLTS, 6.0 AMPS
COMPLEMENTARY LOW
VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
7,8
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
BASE
4
BASE
1
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
COLLECTOR
5,6
3
EMITTER
8
Symbol
Max
Unit
1
Collector-Emitter Voltage
NPN
PNP
VCEO
40
−40
Vdc
Collector-Base Voltage
NPN
PNP
VCBO
40
−40
Vdc
SOIC−8
CASE 751
STYLE 16
Emitter-Base Voltage
NPN
PNP
VEBO
6.0
−7.0
Vdc
DEVICE MARKING
Collector Current − Continuous
NPN
PNP
IC
3.0
−3.0
A
Collector Current − Peak
NPN
PNP
ICM
6.0
−6.0
A
ESD
HBM Class 3B
MM Class C
Electrostatic Discharge
8
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
C40302
AYWWG
G
1
C40302 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSS40302PDR2G
SOIC−8
(Pb−Free)
2500 /
Tape & Reel
NSV40302PDR2G
SOIC−8
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 2
1
Publication Order Number:
NSS40302P/D
NSS40302PDR2G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
576
mW
4.6
mW/°C
RqJA
217
°C/W
PD
676
mW
5.4
mW/°C
RqJA
185
°C/W
PD
653
mW
5.2
mW/°C
RqJA
191
°C/W
PD
783
mW
6.3
mW/°C
RqJA
160
°C/W
TJ, Tstg
−55 to +150
°C
SINGLE HEATED
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
10 mm2, 1 oz. copper traces, still air.
100 mm2, 1 oz. copper traces, still air.
1. FR− 4 @
2. FR− 4 @
3. Dual heated values assume total power is the sum of two equally powered devices.
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2
NSS40302PDR2G
NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
−
−
40
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
180
180
400
350
340
320
−
−
−
−
−
−
−
−
0.008
0.044
0.080
0.082
0.011
0.060
0.115
0.115
−
0.780
0.900
−
0.650
0.750
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 5)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 5)
(IC = 1.0 A, IB = 0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 5)
(IC = 0.1 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
V
V
V
fT
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
320
450
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
40
50
pF
td
−
−
100
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
780
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
110
ns
SWITCHING CHARACTERISTICS
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NSS40302PDR2G
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−40
−
−
−40
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
220
180
150
380
340
300
230
−
−
−
−
−
−
−
−
−0.013
−0.075
−0.130
−0.135
−0.017
−0.095
−0.170
−0.170
−
−0.780
−0.900
−
−0.660
−0.750
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 5)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 5)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 5)
(IC = −0.1 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
250
300
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
50
65
pF
td
−
−
60
ns
Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
tr
−
−
120
ns
Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
ts
−
−
400
ns
Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
tf
−
−
130
ns
SWITCHING CHARACTERISTICS
Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
0.30
0.14
150°C
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.16
25°C
0.12
0.10
−55°C
0.08
0.06
0.04
0.02
IC/IB = 100
0.25
150°C
0.20
0.15
25°C
0.10
−55°C
0.05
0
0
0.001
0.01
0.1
1
0.001
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
700
600 150°C (2.0 V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C (5.0 V)
500
25°C (5.0 V)
400
25°C (2.0 V)
300
−55°C (5.0 V)
200 −55°C (2.0 V)
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
100
0.2
0.001
0.01
0.1
1
0.001
10
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
1.0
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
0.9
0.01
IC, COLLECTOR CURRENT (A)
1.0
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
IC/IB = 10
0.9
VCE = +2.0 V
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
0.9
100 mA
0.8
1A
3A
2A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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5
0.1
NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
80
Cobo, OUTPUT CAPACITANCE (pF)
375
350
325
300
275
250
Cibo (pF)
225
200
175
150
1
2
3
4
5
50
40
Cobo (pF)
30
20
0
6
10
15
20
25
30
35
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10 ms
100 ms
1.0
0.1
Thermal Limit
0.01
Single Pulse Test at TA = 25°C
0.1
1.0
40
3.5
1 ms
0.01
5
Vcb, COLLECTOR−BASE VOLTAGE (V)
1s
IC (A)
60
VEB, EMITTER−BASE VOLTAGE (V)
10
0.001
70
10
0
IC, COLLECTOR CURRENT (A)
Cibo, INPUT CAPACITANCE (pF)
400
IB = 12 mA
3.0
10 mA
2.5
8 mA
2.0
6 mA
1.5
4 mA
1.0
2 mA
0.5
0
10
0
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VCE (Vdc)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
Figure 10. Collector Current as a Function of
Collector Emitter Voltage
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6
2.0
NSS40302PDR2G
PNP TYPICAL CHARACTERISTICS
−0.30
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
−0.20
−55°C
−0.15
25°C
−0.10
−0.05
0
−0.001
−0.01
−0.1
−1
−55°C
25°C
150°C
−0.20
−0.15
−0.10
−0.05
0
−0.001
−10
−0.01
−0.1
−1
−10
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
−1.1
150°C (5.0 V)
700
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−1.0
150°C (2.0 V)
600
IC/IB = 10
−0.9
25°C (5.0 V)
500
−55°C
−0.8
25°C (2.0 V)
400
25°C
−0.7
−0.6
300 −55°C (5.0 V)
150°C
−0.5
200 −55°C (2.0 V)
100
−0.4
−0.3
−0.001
0
−0.001
−0.01
−0.1
−1
−10
−0.1
−1
−10
IC, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain vs. Collector
Current
Figure 14. Base Emitter Saturation Voltage vs.
Collector Current
−2.0
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
−0.9
−0.01
IC, COLLECTOR CURRENT (A)
−1.0
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
IC/IB = 100
−0.25
IC, COLLECTOR CURRENT (A)
800
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
−0.25
VCE = −2.0 V
−55°C
−0.8
−0.7
25°C
−0.6
−0.5
150°C
−0.4
−0.3
−0.2
−0.001
−0.01
−0.1
−1
−10
−1.8
−1.6
100 mA
1A
2A
3A
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.0001
−0.001
−0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 15. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 16. Saturation Region
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7
−0.1
NSS40302PDR2G
PNP TYPICAL CHARACTERISTICS
100
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
350
300
250
200
Cibo (pF)
150
100
80
70
60
50
Cobo (pF)
40
30
0
−1
−2
−3
−4
−5
−6
0
−10
−15
−20
−25
−30
−35
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 17. Input Capacitance
Figure 18. Output Capacitance
−3.5
1 ms
−18 mA
IC, COLLECTOR CURRENT (A)
1s
10 ms
100 ms
IC (A)
−1
−0.1
Thermal Limit
−0.01
Single Pulse Test at TA = 25°C
−0.01
−5
VEB, EMITTER BASE VOLTAGE (V)
−10
−0.001
90
−0.1
−1
−3.0
−40
IB = −20 mA
−16 mA
−14 mA
−12 mA
−10 mA
−8 mA
−2.5
−2.0
−1.5
−6 mA
−1.0
−4 mA
−0.5
−2 mA
0
−10
−100
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
VCE (Vdc)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 19. Safe Operating Area
Figure 20. Output Capacitance
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8
NSS40302PDR2G
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NSS40302P/D