ONSEMI NSV60600MZ4T3G

NSS60600MZ4,
NSV60600MZ4T1G,
NSV60600MZ4T3G
60 V, 6.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
SOT−223
CASE 318E
STYLE 1
C 2, 4
Features
 AEC−Q101 Qualified and PPAP Capable
 NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
B1
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−60
Vdc
Collector-Base Voltage
VCBO
−100
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
IC
−6.0
A
ICM
−12.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
E3
AYW
60600G
1
A
Y
W
60600
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 3
1
Publication Order Number:
NSS60600MZ4/D
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Max
Unit
800
6.5
mW
mW/C
155
2
15.6
64
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
C/W
W
mW/C
C/W
mW
C
1. FR−4 @ 7.6 mm2, 1 oz. copper traces.
2. FR−4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
ORDERING INFORMATION
Package
Shipping†
NSS60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSV60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSS60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
NSV60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
−
Vdc
Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−100
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0)
OFF CHARACTERISTICS
V(BR)EBO
−6.0
−
−
Vdc
Collector Cutoff Current (VCB = −100 Vdc, IE = 0)
ICBO
−
−
−0.1
mAdc
Emitter Cutoff Current (VEB = −6.0 Vdc)
IEBO
−
−
−0.1
mAdc
150
120
100
70
−
−
−
−
−
360
−
−
−
−
−
−
−
−
−0.050
−0.100
−
−
−0.050
−0.070
−0.120
−0.250
−0.350
−
−
−1.0
−
−
−0.900
100
−
−
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −6.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −2.0 mA)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
(IC = −3.0 A, IB = −60 mA)
(IC = −6.0 A, IB = −0.6 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
Cutoff Frequency
(IC = −500 mA, VCE = −10 V, f = 1.0 MHz)
fT
−
V
V
V
MHz
Input Capacitance (VEB = 5.0 V, f = 1.0 MHz)
Cibo
−
360
−
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
60
−
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
−
100
−
ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
180
−
ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
540
−
ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
145
−
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle  2%.
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (C)
Figure 1. Power Derating
http://onsemi.com
3
125
150
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G
TYPICAL CHARACTERISTICS
1000
1000
VCE = 4 V
150C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 2 V
25C
−40C
100
10
0.001
0.01
0.1
1
150C
25C
10
10
0.1
1
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
1
IC/IB = 10
150C
0.1
25C
−40C
0.01
0.001
0.01
0.1
1
IC/IB = 50
25C
150C
0.01
10
0.001
0.01
1.0E−04
VBE(on), EMITTER−BASE VOLTAGE (V)
IC = 6 A
3A
0.1
2A
0.1 A
1.0E−03
1A
0.5 A
1.0E−02
1.0E−01
0.1
1
10
Figure 5. Collector−Emitter Saturation Voltage
TJ = 25C
1
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
10
−40C
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
1
0.001
−40C
100
1.0E+00
1.0E+01
1.2
1.1
VCE = 2 V
1.0
0.9
−40C
0.8
0.7
0.6
25C
0.5
0.4
0.3
0.2
0.1
0
0.001
IB, BASE CURRENT (A)
150C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
http://onsemi.com
4
10
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G
TYPICAL CHARACTERISTICS
1.0
1.2
IC/IB = 10
0.9
0.8
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
1.2
1.1
−40C
0.7
0.6
0.5
25C
0.4
150C
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
1.1
1.0
IC/IB = 50
0.9
−40C
0.8
0.7
0.6
25C
0.5
0.4
0.3
150C
0.2
0.1
0
0.001
0.01
IC, COLLECTOR CURRENT (A)
180
TJ = 25C
ftest = 1 MHz
800
700
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
10
Figure 9. Base−Emitter Saturation Voltage
900
600
500
400
300
200
100
0
1
2
3
4
5
7
6
160
TJ = 25C
ftest = 1 MHz
140
120
100
80
60
40
20
0
8
0
10
20
30
40
50
60
70
80
90 100
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
100
140
TJ = 25C
ftest = 1 MHz
VCE = 10 V
120
100
IC, COLLECTOR CURRENT (A)
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
0
0.1
80
60
40
20
0
0.001
0.01
0.1
1
10
10
1 ms
0.5 ms
10 ms
1
100 ms
0.1
0.01
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
http://onsemi.com
5
100
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS60600MZ4/D