ONSEMI NSS40302PDR2G

NSS40302PDR2G
Complementary 40 V, 6.0 A,
Low VCE(sat) Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
40 VOLTS, 6.0 AMPS
COMPLEMENTARY LOW
VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
Features
• Halide Free
• This is a Pb−Free Device
4
BASE
2
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
NPN
PNP
VCEO
40
−40
Vdc
Collector-Base Voltage
NPN
PNP
VCBO
40
−40
Vdc
Emitter-Base Voltage
NPN
PNP
VEBO
6.0
−7.0
Vdc
Collector Current − Continuous
NPN
PNP
IC
3.0
−3.0
A
Collector Current − Peak
NPN
PNP
ICM
6.0
−6.0
A
ESD
HBM Class 3B
MM Class C
Electrostatic Discharge
COLLECTOR
5,6
COLLECTOR
7,8
3
EMITTER
1
EMITTER
8
1
SOIC−8
CASE 751
STYLE 16
DEVICE MARKING
8
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
C40302
AYWWG
G
C40302 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSS40302PDR2G
SOIC−8
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NSS40302P/D
NSS40302PDR2G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
576
mW
4.6
mW/°C
RqJA
217
°C/W
PD
676
mW
5.4
mW/°C
RqJA
185
°C/W
PD
653
mW
5.2
mW/°C
RqJA
191
°C/W
PD
783
mW
6.3
mW/°C
RqJA
160
°C/W
TJ, Tstg
−55 to +150
°C
SINGLE HEATED
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
10 mm2, 1 oz. copper traces, still air.
100 mm2, 1 oz. copper traces, still air.
1. FR−4 @
2. FR−4 @
3. Dual heated values assume total power is the sum of two equally powered devices.
http://onsemi.com
2
NSS40302PDR2G
NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
−
−
40
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
180
180
400
350
340
320
−
−
−
−
−
−
−
−
0.008
0.044
0.080
0.082
0.011
0.060
0.115
0.115
−
0.780
0.900
−
0.650
0.750
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 5)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 5)
(IC = 1.0 A, IB = 0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 5)
(IC = 0.1 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
320
450
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
40
50
pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
100
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
780
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
110
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
http://onsemi.com
3
NSS40302PDR2G
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−40
−
−
−40
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
220
180
150
380
340
300
230
−
−
−
−
−
−
−
−
−0.013
−0.075
−0.130
−0.135
−0.017
−0.095
−0.170
−0.170
−
−0.780
−0.900
−
−0.660
−0.750
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 5)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 5)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 5)
(IC = −0.1 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
250
300
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
50
65
pF
Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
td
−
−
60
ns
Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
tr
−
−
120
ns
Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
ts
−
−
400
ns
Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)
tf
−
−
130
ns
SWITCHING CHARACTERISTICS
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
http://onsemi.com
4
NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
0.14
25°C
0.12
0.10
−55°C
0.08
0.06
0.04
0.02
0
0.001
0.01
0.1
1
10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C (2.0 V)
−55°C (5.0 V)
0.001
0.01
0.1
1
0.001
0.01
0.1
1
IC/IB = 10
0.9
10
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
1.0
VCE = +2.0 V
0.7
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
0
IC, COLLECTOR CURRENT (A)
0.8
−55°C
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.05
0.2
10
1.0
0.9
−55°C
1.0
200 −55°C (2.0 V)
100
25°C
0.10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
25°C (5.0 V)
300
0.15
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
600 150°C (2.0 V)
400
150°C
0.20
IC, COLLECTOR CURRENT (A)
150°C (5.0 V)
500
IC/IB = 100
0.25
IC, COLLECTOR CURRENT (A)
700
hFE, DC CURRENT GAIN
0.30
150°C
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.16
0.001
0.01
0.1
1
10
0.9
100 mA
0.8
1A
3A
2A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
http://onsemi.com
5
0.1
NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
80
Cobo, OUTPUT CAPACITANCE (pF)
375
350
325
300
275
250
Cibo (pF)
225
200
175
150
0
1
2
3
4
5
70
60
50
40
20
10
6
Cobo (pF)
30
0
5
10
15
20
25
30
VEB, EMITTER−BASE VOLTAGE (V)
Vcb, COLLECTOR−BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1 ms
1s
10 ms
100 ms
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
400
0.1
Thermal Limit
0.01
0.001
Single Pulse Test at TA = 25°C
0.01
0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
http://onsemi.com
6
100
35
40
NSS40302PDR2G
PNP TYPICAL CHARACTERISTICS
0.30
150°C
0.20
−55°C
0.15
25°C
0.10
0.05
0
0.001
0.01
0.1
1
10
300 −55°C (5.0 V)
200 −55°C (2.0 V)
100
0
0.001
0.01
0.1
1
0
0.001
0.01
0.1
1
10
IC/IB = 10
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain vs. Collector
Current
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
2.0
VCE = −2.0 V
0.7
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
0.05
IC, COLLECTOR CURRENT (A)
0.8
−55°C
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.10
0.3
10
1.0
0.9
0.15
1.1
25°C (2.0 V)
400
0.20
150°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
25°C (5.0 V)
500
25°C
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (2.0 V)
600
−55°C
IC, COLLECTOR CURRENT (A)
150°C (5.0 V)
700
IC/IB = 100
0.25
IC, COLLECTOR CURRENT (A)
800
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.25
0.001
0.01
0.1
1
10
1.8
100 mA
1.6
1A
3A
2A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 14. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 15. Saturation Region
http://onsemi.com
7
0.1
NSS40302PDR2G
PNP TYPICAL CHARACTERISTICS
100
Cobo, OUTPUT CAPACITANCE (pF)
300
250
200
Cibo (pF)
150
100
0
1
2
3
4
5
90
80
70
60
50
Cobo (pF)
40
30
6
0
5
10
15
20
25
30
VEB, EMITTER BASE VOLTAGE (V)
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 16. Input Capacitance
Figure 17. Output Capacitance
10
1 ms
1s
10 ms
100 ms
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
350
0.1
Thermal Limit
0.01
0.001
Single Pulse Test at TA = 25°C
0.01
0.1
1.0
10
VCE (Vdc)
Figure 18. Safe Operating Area
http://onsemi.com
8
100
35
40
NSS40302PDR2G
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AJ
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
9
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS40302P/D