Si7886ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0040 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 47 RoHS COMPLIANT Available APPLICATIONS D DC/DC Converters D Synchronous Rectifiers PowerPAK SO-8 S 6.15 mm 1 2 5.15 mm S 3 D S 4 G D 8 7 D 6 D 5 G D Bottom View S Ordering Information: Si7886ADP-T1 Si7886ADP-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Conduction)a Avalanche Current IS L= 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 15 20 12 60 A 4.5 1.6 IAS 50 EAS 125 PD V 25 IDM Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode ID mJ 5.4 1.9 3.4 1.2 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73156 S-51016—Rev. B, 23-May-05 www.vishay.com 1 Si7886ADP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 0.6 1 1.5 V IGSS VDS = 0 V, VGS = "12 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 25 A 0.0032 0.0040 VGS = 4.5 V, ID = 23 A 0.0037 0.0048 gfs VDS = 15 V, ID = 25 A 90 VSD IS = 2.9 A, VGS = 0 V 0.7 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 6450 VDS = 15 V, Vss = 0 V, f = 1 kHz 873 47 0.5 tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 9.0 td(on) Rise Time 60 12.5 VDS = 15 5 V,, VGS = 4.5 5 V,, ID = 25 5A Rg Turn-On Delay Time pF p 402 IF = 2.9 A, di/dt = 100 A/ms 1.0 1.5 17 30 14 25 158 230 43 65 50 80 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 Transfer Characteristics 60 50 40 40 I D − Drain Current (A) I D − Drain Current (A) VGS = 10 thru 3 V 50 30 20 2V 10 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 20 TC = 125_C 10 0 0 30 10 0 0.0 25_C 0.5 1.0 −55_C 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 73156 S-51016—Rev. B, 23-May-05 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.0075 Capacitance 8000 0.0045 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 7000 0.0060 VGS = 4.5 V 0.0030 VGS = 10 V Ciss 6000 5000 4000 3000 2000 0.0015 Coss Crss 1000 0.0000 0 0 10 20 30 40 50 0 5 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 25 30 VGS = 10 V ID = 25 A 1.4 4 3 2 1.2 1.0 0.8 1 0 0 10 20 30 40 50 0.6 −50 60 −25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.025 r DS(on) − On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.020 0.015 0.010 ID = 25 A 0.005 0.000 1 0.00 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) 20 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 25 A 5 15 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 6 10 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 73156 S-51016—Rev. B, 23-May-05 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 200 ID = 250 mA 160 −0.0 120 Power (W) V GS(th) Variance (V) 0.2 −0.2 80 −0.4 40 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (sec) TJ − Temperature (_C) Safe Operating Area, Junction-to-Case 100 *Limited by rDS(on) 1 ms I D − Drain Current (A) 10 10 ms 1 100 ms 100 s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 0.01 10−4 www.vishay.com 4 3. TJM − TA = PDMZthJA(t) Single Pulse 10−3 4. Surface Mounted 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73156 S-51016—Rev. B, 23-May-05 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73156. Document Number: 73156 S-51016—Rev. B, 23-May-05 www.vishay.com 5