StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) 40V 3.0mΩ 3.9mΩ 120A ID (Package Limited) 56A c D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and dI/dt Capability l Lead-Free S G D-Pak IRFR7446TRPbF G D S Gate Drain Source Ordering Information Orderable part number Package Type D-PAK D-PAK IRFR7446PBF IRFR7446TRPBF LIMITED BY PACKAGE ID = 56A 100 8 6 TJ = 125°C 4 80 60 40 20 TJ = 25°C 0 2 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 Complete Part Number 120 10 ID, Drain Current (A) ( Ω) RDS (on), Drain-to -Source On Resistance m IRFR7446PBF IRFR7446TRPBF Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 175 TC, Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback January 6, 2015 IRFR7446PbF Absolute Maximum Ratings Symbol Max. 120 Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 56 IDM Pulsed Drain Current 520 PD @TC = 25°C Maximum Power Dissipation d W W/°C V Linear Derating Factor VGS Gate-to-Source Voltage ± 20 TJ Operating Junction and TSTG Storage Temperature Range -55 to + 175 EAS (Thermally limited) IAR EAR °C 300 Soldering Temperature, for 10 seconds (1.6mm from case) EAS (Thermally limited) A 98 0.66 Avalanche Characteristics Units c 84c ID @ TC = 25°C e Single Pulse Avalanche Energy l Avalanche Current d Repetitive Avalanche Energy d 125 Single Pulse Avalanche Energy mJ 251 A See Fig 15,16, 23a, 23b mJ Thermal Resistance Symbol Parameter Junction-to-Case RθJC k RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient k j Typ. Max. ––– 1.52 ––– 50 ––– 110 Units °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V Conditions VGS = 0V, ID = 250μA d V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 26 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 3.0 3.9 mΩ VGS = 10V, ID = 56A 4.4 ––– mΩ VGS = 6.0V, ID mV/°C Reference to 25°C, ID = 1mA g = 28A g VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 100μA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 40V, VGS = 0V ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 Internal Gate Resistance ––– 1.5 ––– RG Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.08mH RG = 50Ω, IAS = 56A, VGS =10V. ISD ≤ 100A, di/dt ≤ 1306A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 2 www.irf.com © 2015 International Rectifier VDS = 40V, VGS = 0V, TJ = 125°C VGS = -20V Ω Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS . When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 22A, VGS =10V. * LD and LS are Internal Drain Inductance and Internal Source Inductance Submit Datasheet Feedback January 6, 2015 IRFR7446PbF Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Min. Typ. Max. Units 170 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 65 18 22 43 9.8 13 32 20 3150 480 330 570 680 ––– 130 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 10V, ID = 56A ID =56A VDS =20V VGS = 10V ID = 56A, VDS =0V, VGS = 10V VDD = 20V ID = 30A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V See Fig. 12 VGS = 0V, VDS = 0V to 32V g ns pF g i h Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 120 ISM (Body Diode) Pulsed Source Current ––– ––– d VSD (Body Diode) Diode Forward Voltage dv/dt trr Peak Diode Recovery Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time f 3 www.irf.com © 2015 International Rectifier c 480 Conditions A MOSFET symbol A showing the integral reverse D G S p-n junction diode. ––– 0.9 1.3 V TJ = 25°C, IS = 56A, VGS = 0V ––– 4.8 ––– V/ns TJ = 175°C, IS = 56A, VDS = 40V VR = 34V, ––– 20 ––– ns TJ = 25°C TJ = 125°C IF = 56A ––– 21 ––– di/dt = 100A/μs ––– 13 ––– nC TJ = 25°C TJ = 125°C ––– 13 ––– ––– 1.8 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) * g g Submit Datasheet Feedback January 6, 2015 IRFR7446PbF 1000 TOP 100 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 4.3V 1 ≤ 60μs PULSE WIDTH Tj = 25°C 100 BOTTOM 4.3V 10 ≤ 60μs PULSE WIDTH Tj = 175°C 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics 1000 100 TJ = 175°C 10 TJ = 25°C 1 VDS = 10V ≤ 60μs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID = 56A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 100000 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss ID= 56A VDS = 32V VDS = 20V 12 8 4 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.3V TOP www.irf.com © 2015 International Rectifier 0 20 40 60 80 100 QG Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback January 6, 2015 IRFR7446PbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C 10 TJ = 25°C 1 100μsec 100 1msec Limited by Package 10 OPERATION IN THIS AREA LIMITED BY R (on) DS 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 2.0 1 10 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.4 49 Id = 1.0mA 47 0.3 46 Energy (μJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) DC 0.1 0.1 48 10msec 45 44 0.2 43 0.1 42 41 0.0 40 0 -60 -40 -20 0 20 40 60 80 100120140160180 20 30 40 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 11. Drain-to-Source Breakdown Voltage ( Ω) RDS(on), Drain-to -Source On Resistance m 10 Fig 12. Typical COSS Stored Energy 16.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS =10V 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFR7446PbF Thermal Response ( ZthJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) EAR , Avalanche Energy (mJ) 140 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 56A 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFR7446PbF 6 4.0 IF = 34A VR = 34V 3.5 TJ = 25°C TJ = 125°C 4 3.0 IRRM (A) VGS(th) Gate threshold Voltage (V) 4.5 ID =50μA ID = 250μA ID = 1.0mA 2.5 2 ID = 1.0A 2.0 1.5 -75 -50 -25 0 25 50 75 0 100 125 150 175 0 200 TJ , Temperature ( °C ) 400 600 800 1000 diF /dt (A/μs) Fig. 18 - Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 80 6 IF = 34A VR = 34V IF = 56A VR = 34V TJ = 25°C TJ = 125°C IRRM (A) QRR (nC) 4 TJ = 25°C TJ = 125°C 60 40 2 20 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typical Stored Charge vs. dif/dt Fig. 19 - Typical Recovery Current vs. dif/dt 80 IF = 56A VR = 34V TJ = 25°C TJ = 125°C QRR (nC) 60 40 20 0 0 200 400 600 800 1000 diF /dt (A/μs) Fig. 21 - Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFR7446PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp I AS Fig 23a. Unclamped Inductive Test Circuit RD VDS Fig 23b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 24a. Switching Time Test Circuit tr t d(off) Fig 24b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V tf .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback January 6, 2015 IRFR7446PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 2001 IN T HE AS S EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as s embly line pos ition indicates "Lead-Free" IRFR120 12 116A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in as s embly line pos ition indicates "Lead-Free" qualification to the cons umer-level OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF R120 12 AS S EMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) P = DES IGNAT ES LEAD-FREE PRODUCT QUALIFIED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS S EMBLY S IT E CODE Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFR7446PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFR7446PbF Qualification information† †† Qualification level D-PAK Industrial ††† (per JEDEC JESD47F guidelines) MS L1 ††† (per JE DE C J-S T D-020D RoHS compliant ) Yes Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Revision History Date 1/6/2015 Comment • Updated EAS (L =1mH) = 251mJ on page 2 • Updated note 10 “Limited by TJmax , starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 22A, VGS =10V”. on page 2 • Updated package outline on page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015