MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features http://onsemi.com • These are Pb--Free Devices* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector--Emitter Voltage VCES --30 Vdc Collector--Base Voltage VCBO --30 Vdc Emitter--Base Voltage VEBO --10 Vdc Collector Current -- Continuous IC --500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C --55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg EMITTER 1 TO--92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction--to--Ambient RθJA 200 °C/W Thermal Resistance, Junction--to--Case RθJC 83.3 °C/W 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS A6x AYWW G G xx = 3, or 4 A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 0 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPSA63/D MPSA63, MPSA64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max --30 -- -- --100 -- --100 5,000 10,000 --- 10,000 20,000 --- -- --1.5 -- --2.0 125 -- Unit OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (IC = --100 mAdc, VBE = 0) V(BR)CES Collector Cutoff Current (VCB = --30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = --10 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = --10 mAdc, VCE = --5.0 Vdc) MPSA63 MPSA64 (IC = --100 mAdc, VCE = --5.0 Vdc) hFE MPSA63 MPSA64 Collector--Emitter Saturation Voltage (IC = --100 mAdc, IB = --0.1 mAdc) VCE(sat) Base--Emitter On Voltage (IC = --100 mAdc, VCE = --5.0 Vdc) VBE(on) -- Vdc Vdc SMALL--SIGNAL CHARACTERISTICS fT Current--Gain — Bandwidth Product (Note 2) (IC = --100 mAdc, VCE = --5.0 Vdc, f = 100 MHz) MHz 1. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. 2. fT = |hfe| S ftest. ORDERING INFORMATION Package Shipping† MPSA63G TO--92 (Pb--Free) 5000 Units / Bulk MPSA63RLRAG TO--92 (Pb--Free) 2000 / Tape & Reel MPSA64G TO--92 (Pb--Free) 5000 Units / Bulk MPSA64RLRAG TO--92 (Pb--Free) 2000 / Tape & Reel MPSA64RLRMG TO--92 (Pb--Free) 2000 / Ammo Pack Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSA63, MPSA64 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 --10 V 25°C VCE = --2.0 V --5.0 V 20 10 7.0 5.0 --55°C 3.0 2.0 --0.3 --0.5 --0.7 --1.0 --2.0 --3.0 --5.0 --7.0 --10 --20 --30 --70 --50 --200 --100 --300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) --2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) --1.6 --1.2 VBE(on) @ VCE = --5.0 V --0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 --0.4 0 --0.3 --0.5 --1.0 --2 --3 --5 --10 --20 --30 --50 IC, COLLECTOR CURRENT (mA) --100 --200 --300 --2.0 TA = 25°C --1.8 --1.6 --1.4 IC = --10 mA --50 mA --100 mA --175 mA --1.2 --1.0 --0.8 --0.6 --0.1 --0.2 --0.5 --1 --2 Figure 2. “On” Voltage --1000 VCE = --5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN --5 --10 --20 --50 --100--200 --500 --1K--2K --5K--10K IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 10 4.0 3.0 2.0 --300 mA 1.0 0.4 0.2 0.1 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 --300 --200 TA = 25°C 1.0 s TC = 25°C --100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA62 --50 --20 MPSA63 --10 --1.0 --1K 100 ms 1.0 ms --2.0 --4.0 --6.0 --10 --20 --40 --60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3 MPSA63, MPSA64 PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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