Order this document by MPSA27/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol MPSA25 MPSA27 Unit Collector – Emitter Voltage VCES 40 60 Vdc Emitter – Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) V(BR)CES 60 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 60 — — Vdc Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) ICBO — — 100 nAdc Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) ICES — — 500 nAdc Emitter Cutoff Current (VEB = 10 Vdc) IEBO — — 100 nAdc Characteristic OFF CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSA27 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 10,000 10,000 — — — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE — Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) VCE(sat) — — 1.5 Vdc Base – Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) VBE(on) — — 2.0 Vdc hfe 1.25 2.4 — — SMALL– SIGNAL CHARACTERISTICS Small Signal Current Gain (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA27 VCE = 5.0 V TA = 25°C 40 VBE(S) @ IC/IB = 1.0 k 1.4 1.2 VBE(ON) @ VCE = 5.0 V 1.0 0.8 20 TA = –55°C 0 1.0 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 80 60 TA = 25°C 1.6 TA = 125°C 100 2.0 3.0 10 20 30 100 200 500 1k 10 20 30 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “ON” Voltages 500 1k 4.0 1.5 TA = 25°C 1.3 1.2 IC = 500 mA 1.1 1.0 0.9 2.0 3.0 1.0 1.6 1.4 VCE(S) @ IC/IB = 1.0 k 0.6 hfe , SMALL–SIGNAL CURRENT GAIN h FE , DC CURRENT GAIN (k) 120 IC = 250 mA IC = 100 mA IC = 10 mA 0.8 0.7 VCE = 5.0 V f = 100 MHz TA = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 0.5 1.0 5.0 2.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain I C , COLLECTOR CURRENT (mA) 1k 500 100 ms 1.0 ms 500 1.0 s 200 TC = 25°C TA = 25°C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 4.0 6.0 10 20 40 50 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Active Region — Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA27 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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