NSS12600CF8T1G 12 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com −12 VOLTS, 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 45 mW COLLECTOR 1, 2, 3, 6, 7, 8 4 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −5.0 Adc Collector Current − Peak ICM −6.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Collector Current − Continuous 5 EMITTER ChipFET] CASE 1206A STYLE 4 MARKING DIAGRAM THERMAL CHARACTERISTICS VE M G Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 830 6.7 mW mW/°C RqJA (Note 1) 150 °C/W PD (Note 2) 1.4 11.1 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 90 °C/W PIN CONNECTIONS Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) 15 °C/W C 8 1 C Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 2.75 W C 7 2 C C 6 3 C TJ, Tstg −55 to +150 °C E 5 4 B Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. VE = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSS12600CF8T1G ChipFET (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 Publication Order Number: NSS12600CF8/D NSS12600CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −12 − − −12 − − −7.0 − − − − −0.1 − − −0.1 250 250 250 200 180 − − 300 − − − − − − − − − − − − − −0.005 −0.045 −0.070 −0.095 −0.120 −0.140 −0.010 −0.060 −0.080 −0.120 −0.160 −0.170 − − −0.90 − − −0.90 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −12 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) (IC = −3.0 A, IB = −0.030 A) (IC = −4.0 A, IB = −0.400 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 800 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 300 pF Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) td − − 130 ns Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tr − − 220 ns Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) ts − − 350 ns Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tf − − 240 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 2 NSS12600CF8T1G 0.40 IC/IB = 10 0.20 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 VCE(sat) = 150°C 0.15 25°C 0.10 −55°C 0.05 0 0.001 0.01 0.1 1.0 IC/IB = 100 0.35 VCE(sat) = −55°C 0.30 0.25 0.20 0.15 150°C 0.10 0.05 0 10 0.001 0.01 IC, COLLECTOR CURRENT (A) 1.2 150°C (2 V) 500 25°C (5 V) 25°C (2 V) 300 −55°C (5 V) 200 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 100 0.001 0.01 0.1 1.0 10 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.001 0.01 0.1 10 1.0 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = −1.0 V −55°C 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 1.0 IC, COLLECTOR CURRENT (A) 0.8 0.1 IC/IB = 10 1.1 0.3 1.0 0.9 10 0.4 −55°C (2 V) VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (5 V) 400 1.0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 800 600 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 700 25°C 0.01 0.1 1.0 10 1.0 10 mA 100 mA IC = 500 mA 0.8 300 mA 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 450 Cobo, OUTPUT CAPACITANCE (pF) 900 850 Cibo (pF) 800 750 700 650 600 550 500 450 400 350 300 0 1.0 2.0 3.0 4.0 5.0 Cobo (pF) 400 350 300 250 200 150 6.0 2.0 0 4.0 6.0 8.0 10 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 mS 10 mS 1.0 100 mS IC (A) Cibo, INPUT CAPACITANCE (pF) NSS12600CF8T1G 1.0 S 0.1 Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 4 100 12 NSS12600CF8T1G PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE G D 8 7 q 6 L 5 HE 5 6 7 8 4 3 2 1 E 1 e1 2 3 e 4 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q c A MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.014 0.011 0.071 0.075 5° NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 0.05 (0.002) SOLDERING FOOTPRINT* 2.032 0.08 2.032 0.08 0.457 0.018 0.635 0.025 1.727 0.068 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 0.178 0.007 0.711 0.028 mm Ǔ ǒinches 0.66 0.026 Basic SCALE 20:1 mm Ǔ ǒinches Style 4 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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