NSS35200CF8T1G 35 V, 7 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 35 VOLTS 7.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 78 mW COLLECTOR 1, 2, 3, 6, 7, 8 4 BASE Features • This is a Pb−Free Device 5 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −7.0 A Electrostatic Discharge ESD HBM Class 3 MM Class C Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 635 mW 5.1 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 200 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 1.35 W 11 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 90 °C/W Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range RqJL 15 °C/W PDsingle (Notes 2 & 3) 2.75 W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 PIN CONNECTIONS MARKING DIAGRAM C 8 1 C 1 8 C 7 2 C 2 7 C 6 3 C 3 E 5 4 B 4 G4 M G Symbol ChipFET] CASE 1206A STYLE 4 6 5 G4 = Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping † NSS35200CF8T1G ChipFET (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS35200CF8T1G/D NSS35200CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − − − − −0.10 −0.15 −0.30 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 A, VCE = −2.0 V) (IC = −1.5 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) toff − 225 − nS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.1 IC/IB = 100 50 10 0.01 0.001 0.001 0.01 0.1 0.20 100°C 0.15 25°C 0.10 0.05 0 0.001 0.01 0.1 1.0 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 125°C (5 V) 125°C (2 V) hFE , DC CURRENT GAIN 400 350 25°C (5 V) 300 25°C (2 V) 250 200 −55°C (5 V) 150 −55°C (2 V) 100 50 0.01 0.1 1 −55°C 0.8 25°C 0.6 100°C 0.4 0.2 0 0.001 10 0.001 0.1 0.01 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 750 1.0 700 0.9 C ibo , INPUT CAPACITANCE (pF) 1.1 100°C 0.8 25°C 0.7 0.6 −55°C 0.5 0.4 0.3 −55°C IC, COLLECTOR CURRENT (A) 450 V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS) IC/IB = 50 IC, COLLECTOR CURRENT (A) 500 0 0.25 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) NSS35200CF8T1G 650 600 550 500 450 400 350 0.001 0.01 0.1 300 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (A) VEB, EMITTER BASE VOLTAGE (V) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 3 4.5 5.0 NSS35200CF8T1G 10 200 1 ms 1s 10 ms 175 150 1.00 125 IC, (A) Cobo, OUTPUT CAPACITANCE (pF) 225 100 100 ms Thermal Limits 0.10 75 50 25 0 0.01 0 5.0 10 15 20 25 30 35 0.10 1 VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance R(t), TRANSIENT THERMAL RESISTANCE 10 VCE, (Vdc) Figure 8. Safe Operating Area 1000 D = 0.10 D = 0.50 100 D = 0.20 P(pk) 10 D = 0.05 1 D = 0.01 t1 0.1 Single Pulse t2 Duty Cycle = D = t1/t2 qJC = 174°C/W 0.01 t1, TIME (Sec) Figure 9. Normalized Thermal Response http://onsemi.com 4 100 NSS35200CF8T1G PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE PRELIMINARY A 8 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. M 6 K 5 S 5 6 7 8 4 3 2 1 B 1 2 3 L 4 D DIM A B C D G J K L M S J G STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR C 0.05 (0.002) MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 SOLDERING FOOTPRINT* 2.032 0.08 2.032 0.08 0.457 0.018 0.635 0.025 1.727 0.068 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 0.178 0.007 0.711 0.028 mm Ǔ ǒinches 0.66 0.026 Basic SCALE 20:1 Style 4 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm Ǔ ǒinches NSS35200CF8T1G ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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