NSS20300MR6T1G 20 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 20 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 78 mW COLLECTOR 1, 2, 5, 6 3 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −20 Vdc Collector-Base Voltage VCBO −30 Vdc Emitter-Base Voltage VEBO −6.0 Vdc IC −3.0 Adc Collector Current − Peak ICM −5.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Collector Current − Continuous 4 EMITTER 1 TSOP−6 CASE 318G STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 545 4.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 230 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 1.06 W 8.5 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 118 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) 48 40 °C/W °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 2) 1.75 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 2 oz copper traces. 2. FR−4 @ 500 mm2, 2 oz copper traces. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 2 1 DEVICE MARKING VS1 MG G VS1 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSS20300MR6T1G TSOP−6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS20300MR6/D NSS20300MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −20 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −20 Vdc) ICES Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc −20 − −30 − −6.0 − − −0.1 − −0.1 − −0.1 Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.10 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1A, IB = −0.010 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −3.0 V) VBE(on) 100 100 100 230 − 400 − − − − −0.010 −0.127 −0.250 −0.015 −0.145 −0.320 − − −0.85 − − −0.875 100 − − V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) CIBO − 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) COBO − 100 pF 3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz NSS20300MR6T1G 0.25 IC/IB = 10 150°C 0.15 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.2 IC/IB = 100 0.2 150°C 0.15 −55°C 0.1 0.05 25°C 0.1 0.05 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 0 0.001 Figure 1. Collector Emitter Saturation Voltage versus Collector Current VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (5.0 V) 475 150°C (2.0 V) 425 375 325 25°C (5.0 V) 275 25°C (2.0 V) 225 175 −55°C (5.0 V) 125 75 0.001 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 −55°C (2.0 V) 0.01 IC/IB = 10 1.1 0.1 1 10 0.3 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.00 1.1 IC/IB = 100 −55°C 0.80 0.70 25°C 0.60 0.50 150°C 0.40 VCE = −1.0 1.0 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 0.90 10 1.2 525 hFE, DC CURRENT GAIN 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage versus Collector Current 575 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) −55°C 0.30 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.20 0.001 0.01 0.1 1 10 0.2 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage versus Collector Current Figure 6. Base Emitter Turn−On Voltage versus Collector Current http://onsemi.com 3 NSS20300MR6T1G 0.6 0.4 IC = 500 mA IC = 100 mA 0.2 0.0 0.01 CIBO, INPUT CAPACITANCE (pF) 0.8 +25°C IC = 10 mA IC = 300 mA 0.1 1 10 100 650 625 600 575 550 525 500 475 450 425 400 375 350 325 300 275 250 225 0 −CIBO (pF) +25°C 1 IB, BASE CURRENT (mA) 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 2 3 5 5 6 Figure 8. NSS20300MR6T1G Input Capacitance −COBO (pF) +25°C 0 4 VEB, EMITTER BASE VOLTAGE (V) Figure 7. Saturation Region COBO, OUTPUT CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 10 15 20 VCB, COLLECTOR BASE VOLTAGE (V) Figure 9. NSS20300MR6T1G Output Capacitance http://onsemi.com 4 25 7 NSS20300MR6T1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 DIM A A1 b c D E e L HE q 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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