NSS35200CF8T1G High Current Surface Mount PNP Silicon Low VCE−SAT Switching Transistor for Load Management in Portable Applications http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −7.0 A Electrostatic Discharge ESD Rating Collector Current − Continuous COLLECTOR 1, 2, 3, 6, 7, 8 4 BASE HBM Class 3 MM Class C 5 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD (Note 1) 635 mW 5.1 mW/°C RJA (Note 1) 200 °C/W PD (Note 2) 1.35 W 11 mW/°C C 8 1 C 1 8 7 ChipFET CASE 1206A STYLE 4 PIN CONNECTIONS MARKING DIAGRAM RJA (Note 2) 90 °C/W C 7 2 C 2 Thermal Resistance, Junction−to−Lead #1 RJL 15 °C/W C 6 3 C 3 E 5 4 B 4 PDsingle (Notes 2 & 3) 2.75 W TJ, Tstg −55 to +150 °C Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. Semiconductor Components Industries, LLC, 2005 April, 2005 − Rev. 2 1 G4 M Thermal Resistance, Junction−to−Ambient 6 5 G4 = Specific Device Code M = Month Code ORDERING INFORMATION Device Package Shipping† NSS35200CF8T1G ChipFET (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS35200CF8T1G/D NSS35200CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − − − − −0.10 −0.15 −0.30 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 A, VCE = −2.0 V) (IC = −1.5 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 ) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 ) toff − 225 − nS 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2% http://onsemi.com 2 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.1 IC/IB = 100 50 10 0.01 0.001 0.001 0.01 0.1 0.20 100°C 0.15 25°C 0.10 0.05 0 0.001 0.01 0.1 1.0 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 125°C (5 V) 125°C (2 V) hFE , DC CURRENT GAIN 400 350 25°C (5 V) 300 25°C (2 V) 250 200 −55°C (5 V) 150 −55°C (2 V) 100 50 0.01 0.1 1 −55°C 0.8 25°C 0.6 100°C 0.4 0.2 0 0.001 10 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 750 1.0 700 0.9 C ibo , INPUT CAPACITANCE (pF) 1.1 100°C 0.8 25°C 0.7 0.6 −55°C 0.5 0.4 0.3 −55°C IC, COLLECTOR CURRENT (A) 450 V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS) IC/IB = 50 IC, COLLECTOR CURRENT (A) 500 0 0.25 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) NSS35200CF8T1G 650 600 550 500 450 400 350 0.001 0.01 0.1 300 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (A) VEB, EMITTER BASE VOLTAGE (V) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 3 4.5 5.0 NSS35200CF8T1G 10 200 1 ms 1s 10 ms 175 150 1.00 125 IC, (A) Cobo, OUTPUT CAPACITANCE (pF) 225 100 100 ms Thermal Limits 0.10 75 50 25 0 0.01 0 5.0 10 15 20 25 30 35 0.10 1 VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance R(t), TRANSIENT THERMAL RESISTANCE 10 VCE, (Vdc) Figure 8. Safe Operating Area 1000 D = 0.10 D = 0.50 100 D = 0.20 P(pk) 10 D = 0.05 1 D = 0.01 t1 0.1 Single Pulse t2 Duty Cycle = D = t1/t2 JC = 174°C/W 0.01 t1, TIME (Sec) Figure 9. Normalized Thermal Response http://onsemi.com 4 100 NSS35200CF8T1G PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE PRELIMINARY A 8 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. M 6 K 5 S 5 6 7 8 4 3 2 1 B 1 2 3 L 4 D DIM A B C D G J K L M S J G STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR C 0.05 (0.002) MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 SOLDERING FOOTPRINT* 2.032 0.08 2.032 0.08 0.457 0.018 0.635 0.025 1.727 0.068 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 0.178 0.007 0.711 0.028 mm inches 0.66 0.026 Basic SCALE 20:1 Style 4 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm inches NSS35200CF8T1G ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. NSS35200CF8T1G/D