Amplifier Transistor

BC212B
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
−50
Vdc
Collector-Base Voltage
VCBO
−60
Vdc
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
TJ, Tstg
−55 to +150
°C
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
1
12
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
212B
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BC212BG
TO−92
(Pb−Free)
5000 Units / Bulk
BC212BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC212B/D
BC212B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
V(BR)CEO
−50
−
−
Vdc
Collector −Base Breakdown Voltage
V(BR)CBO
−60
−
−
Vdc
Emitter −Base Breakdown Voltage
V(BR)EBO
−5
−
−
Vdc
Collector−Emitter Leakage Current
ICBO
−
−
−15
nAdc
Emitter−Base Leakage Current
IEBO
−
−
−15
nAdc
40
−
−
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
60
−
−
(IC = −100 mAdc, VCE = −5.0 Vdc) (Note 1)
−
120
−
−
−
−0.10
−0.25
−
−0.6
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc) (Note 1)
VCE(sat)
Vdc
Base −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
−1.0
−1.4
Vdc
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on)
−0.6
−0.62
−0.72
Vdc
fT
−
280
−
MHz
Common−Base Output Capacitance
(VCB = −10 Vdc, IC = 0, f = 1.0 mHz)
Cob
−
−
6.0
pF
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz)
NF
−
−
10
dB
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz)
hfe
200
−
400
−
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 mHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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2
BC212B
−1.0
VCE = −10 V
TA = 25°C
1.5
−0.9
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
VCE(sat) @ IC/IB = 10
−0.1
0
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
VBE(sat) @ IC/IB = 10
−0.2
0.3
0.2
−0.2
VCE = −10 V
TA = 25°C
150
100
80
60
5.0
TA = 25°C
3.0
Cob
2.0
40
30
20
−0.5
−1.0
−2.0 −3.0 −5.0
−10
−20 −30
IC, COLLECTOR CURRENT (mAdc)
1.0
−0.4 −0.6
−50
Figure 3. Current−Gain − Bandwidth Product
0.3
r b′, BASE SPREADING RESISTANCE (OHMS)
0.5
VCE = −10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
0.01
−0.1
−0.2
−0.5
−1.0
−2.0
IC, COLLECTOR CURRENT (mAdc)
−5.0
−1.0
−2.0
−4.0 −6.0 −10
VR, REVERSE VOLTAGE (VOLTS)
−20 −30 −40
Figure 4. Capacitances
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
150
140
130
120
110
100
−0.1
−10
VCE = −10 V
f = 1.0 kHz
TA = 25°C
Figure 5. Output Admittance
−0.2 −0.3 −0.5
−1.0
−2.0 −3.0
IC, COLLECTOR CURRENT (mAdc)
−5.0
Figure 6. Base Spreading Resistance
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3
−10
BC212B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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4
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For additional information, please contact your local
Sales Representative
BC212B/D