BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO BC212 BC213 Emitter-Base Voltage Vdc 3 EMITTER –60 –45 VEBO –5.0 Vdc Collector Current – Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C –55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE –50 –30 TJ, Tstg 1 2 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic 3 TO–92 CASE 29 STYLE 17 Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 357 °C/W Thermal Resistance, Junction to Case RθJC 125 °C/W BC2 1xx YWW BC21xx xx Y WW = Specific Device Code = 2, 2B, or 3 = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 2 1 Package Shipping BC212 TO–92 5000 Units/Box BC212B TO–92 5000 Units/Box BC212BRL1 TO–92 2000/Tape & Reel BC212BZL1 TO–92 2000/Ammo Pack BC213 TO–92 5000 Units/Box Publication Order Number: BC212/D BC212, BC212B, BC213 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC212 BC213 V(BR)CEO –50 –30 – – – – Vdc Collector–Base Breakdown Voltage (IC = –10 A, IE = 0) BC212 BC213 V(BR)CBO –60 –45 – – – – Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) BC212 BC213 V(BR)EBO –5 –5 – – – – Vdc Collector–Emitter Leakage Current (VCB = –30 V) BC212 BC213 ICBO – – – – –15 –15 nAdc Emitter–Base Leakage Current (VEB = –4.0 V, IC = 0) BC212 BC213 IEBO – – – – –15 –15 nAdc BC212 BC213 40 40 – – – – (IC = –2.0 mAdc, VCE = –5.0 Vdc) BC212 BC213 60 80 – – – – (IC = –100 mAdc, VCE = –5.0 Vdc) (Note 1.) BC212 BC213 – – 120 140 – – – – –0.10 –0.25 – –0.6 ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) (Note 1.) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) – –1.0 –1.4 Vdc Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) –0.6 –0.62 –0.72 Vdc – – 280 360 – – – – 6.0 DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC212 BC213 Common–Base Output Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Cob Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) NF Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz) BC212, BC213 MHz dB – – 10 60 80 200 – – – – – 400 hfe BC212 BC213 BC212B 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. http://onsemi.com 2 pF – BC212, BC212B, BC213 -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25°C 150 100 80 -50 -100 Figure 2. “Saturation” and “On” Voltages C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25°C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current–Gain – Bandwidth Product 0.3 r b′, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25°C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 BC212, BC212B, BC213 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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