MPS4126 Amplifier Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE −25 Vdc Collector −Base Voltage VCB −25 Vdc Emitter −Base Voltage VEB −4.0 Vdc Collector Current − Continuous IC −200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 1 EMITTER 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W TO−92 CASE 29 STYLE 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS 4126 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS4126RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 4 1 Package TO−92 (Pb−Free) Shipping† 2,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPS4126/D MPS4126 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −25 − −25 − −4.0 − − −50 − −50 120 60 360 − − −0.4 − −0.95 170 − − 4.5 − 11.5 120 480 − 4.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mA, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IC = 0, IE = −10 mA) V(BR)EBO Collector Cutoff Current (VCB = −20 V, IE = 0) ICBO Emitter Cutoff Current (VEB = −3.0 V, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −2.0 mA, VCE = −1.0 V) (IC = −50 mA, VCE = −1.0 V) hFE Collector −Emitter Saturation Voltage (IC = −50 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −50 mA, IB = −5.0 mA) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mA, VCE = −20 V, f = 100 MHz) fT Output Capacitance (VCB = −5.0 V, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = −0.5 V, IC = 0, f = 1.0 MHz) Cib Small−Signal Current Gain (IC = −2.0 mA, VCE = 1.0 V, f = 1.0 kHz) hfe Noise Figure (IC = −100 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz) NF http://onsemi.com 2 MHz pF pF − dB MPS4126 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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