MPS6507 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 20 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range http://onsemi.com TO−92 (TO−226AA) CASE 29−04 STYLE 1 1 2 3 COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Ambient RqJA Thermal Resistance, Junction−to−Case (1) RqJC Max Unit 200 °C/W 83.3 °C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 30 — — Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc — — — — 50 1.0 nAdc mAdc hFE 25 75 — — fT 700 800 — MHz Cobo — 1.25 2.5 pF hfe 20 — — — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60°C) ICBO ON CHARACTERISTICS DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 Publication Order Number: MPS6507/D MPS6507 PACKAGE DIMENSIONS CASE 029−04 (TO−226AA) ISSUE AD A B R P L F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. K D X X J G H V C 1 SECTION X−X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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