Order this document by PBF259/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol PBF259,S Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 300 — Vdc Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICBO — 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc) IEBO — 20 nAdc Collector Cutoff Current (VCE = 10 Vdc) ICEO — 50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 60 25 25 — — — — — 0.5 1.0 fT 40 — MHz Cobo — 3.0 pF ON CHARACTERISTICS DC Current Gain(1) (IC = 20 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 1.5 mAdc) (IC = 30 mAdc, IB = 60 mAdc hFE PBF259S All Types All Types — VCE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 hFE, DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 25°C 50 –55°C 30 20 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 70 100 C, CAPACITANCE (pF) 50 Ceb 20 10 5.0 Ccb 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 70 50 30 20 10 1.0 Figure 2. Capacitances 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 500 IC, COLLECTOR CURRENT (mA) TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 2.0 Figure 3. Current–Gain — Bandwidth Product 1.4 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 TJ = 25°C VCE = 20 V f = 20 MHz VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 100 10 µs 100 µs TA = 25°C 1.0 ms TC = 25°C 50 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 1.0 CURVES APPLY BELOW RATED VCEO 0.5 0.5 1.0 2.0 5.0 10 20 PBF259S PBF259 50 100 200 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Forward Bias Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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