Order this document by MPSL01/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 120 Vdc Collector – Base Voltage VCBO 140 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 120 — Vdc Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CBO 140 — Vdc Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current (VCB = 75 Vdc, IE = 0) ICBO — 1.0 µAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO — 100 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSL01 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 50 300 — — — 0.20 0.30 — — 1.2 1.4 fT 60 — MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.0 pF Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 30 — — ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)(1) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSL01 500 300 h FE, DC CURRENT GAIN 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 – 55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSL01 101 IC, COLLECTOR CURRENT ( µA) VCE = 30 V 100 TJ = 125°C 10–1 10–2 75°C 10–3 REVERSE FORWARD 25°C 10–4 10–5 0.4 IC = ICES 0.3 0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut–Off Region 1.0 2.5 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.0 1.0 qVC for VCE(sat) 0.5 0 – 0.5 – 1.0 qVB for VBE(sat) – 1.5 – 2.0 – 2.5 0.1 100 TJ = – 55°C to +135°C 1.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k RC RB Vout 5.1 k Vin 100 1N914 Values Shown are for IC @ 10 mA Figure 6. Switching Time Test Circuit 4 TJ = 25°C 30 C, CAPACITANCE (pF) VCC 30 V VBB – 8.8 V Vin 100 Figure 5. Temperature Coefficients 100 70 50 10.2 V 50 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSL01 5000 1000 IC/IB = 10 TJ = 25°C 500 1000 tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 500 300 ts @ VCC = 120 V 200 20 10 0.2 0.3 0.5 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V t, TIME (ns) t, TIME (ns) 200 2000 tr @ VCC = 120 V 300 tf @ VCC = 120 V 3000 100 1.0 20 30 50 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 8. Turn–On Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 9. Turn–Off Time 5 MPSL01 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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