MOTOROLA MPSL01

Order this document
by MPSL01/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
120
Vdc
Collector – Base Voltage
VCBO
140
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
150
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
120
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
V(BR)CBO
140
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
ICBO
—
1.0
µAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
100
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPSL01
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
hFE
50
300
—
—
—
0.20
0.30
—
—
1.2
1.4
fT
60
—
MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
8.0
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
30
—
—
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)(1)
VBE(sat)
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSL01
500
300
h FE, DC CURRENT GAIN
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
Figure 2. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPSL01
101
IC, COLLECTOR CURRENT ( µA)
VCE = 30 V
100
TJ = 125°C
10–1
10–2
75°C
10–3
REVERSE
FORWARD
25°C
10–4
10–5
0.4
IC = ICES
0.3
0.1
0.2
0
0.1
0.2
0.3
0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0.5
0.6
Figure 3. Collector Cut–Off Region
1.0
2.5
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (mA)
50
2.0
1.0
qVC for VCE(sat)
0.5
0
– 0.5
– 1.0
qVB for VBE(sat)
– 1.5
– 2.0
– 2.5
0.1
100
TJ = – 55°C to +135°C
1.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
10 µs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 µF
3.0 k
RC
RB
Vout
5.1 k
Vin
100
1N914
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
4
TJ = 25°C
30
C, CAPACITANCE (pF)
VCC
30 V
VBB
– 8.8 V
Vin
100
Figure 5. Temperature Coefficients
100
70
50
10.2 V
50
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSL01
5000
1000
IC/IB = 10
TJ = 25°C
500
1000
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
500
300
ts @ VCC = 120 V
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25°C
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
200
2000
tr @ VCC = 120 V
300
tf @ VCC = 120 V
3000
100
1.0
20 30 50
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 8. Turn–On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 9. Turn–Off Time
5
MPSL01
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: R[email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
*MPSL01/D*
MPSL01/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data