MOTOROLA MPS6571

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by MPS6571/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
1
EMITTER
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
20
Vdc
Collector – Base Voltage
VCBO
25
Vdc
Emitter – Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
—
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
—
—
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
IEBO
—
—
50
nAdc
Characteristic
OFF CHARACTERISTICS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPS6571
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
250
—
1000
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
—
0.5
Vdc
Base – Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
—
0.8
Vdc
fT
50
175
—
MHz
Cobo
—
—
4.5
pF
NF
—
1.2
—
dB
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω, f = 100 Hz)
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS6571
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 µA
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0 mA
1.0 mA
300 µA
100 µA
0.3
0.2
RS ≈ 0
0.1
10
20
10 µA
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 µA
8.0
IC = 1.0 mA
100 µA
10 µA
4.0
30 µA
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 µA
100
70
50
3.0 mA
1.0 mA
30
300 µA
20
10
7.0
5.0
30 µA
10 µA
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 µA
8.0
100 µA
30 µA
4.0
10 µA
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
3
h FE, DC CURRENT GAIN (NORMALIZED)
MPS6571
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
RθVBE, BASE–EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
– 0.4
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
– 0.8
– 1.2
TJ = 25°C to 125°C
– 1.6
– 2.0
– 55°C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
– 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
4
50 100
Figure 10. Temperature Coefficients
50
100
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 9. “On” Voltages
20
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current–Gain — Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS6571
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
5
MPS6571
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6
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Motorola Small–Signal Transistors, FETs and Diodes Device
Data
MPS6571/D