Order this document by MPS6571/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Base Voltage VCBO 25 Vdc Emitter – Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 25 — — Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — — 50 nAdc Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) IEBO — — 50 nAdc Characteristic OFF CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS6571 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 250 — 1000 — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — — 0.5 Vdc Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) — — 0.8 Vdc fT 50 175 — MHz Cobo — — 4.5 pF NF — 1.2 — dB ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω, f = 100 Hz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS6571 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 µA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 0.3 0.2 RS ≈ 0 0.1 10 20 10 µA 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 8.0 IC = 1.0 mA 100 µA 10 µA 4.0 30 µA 0 10 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 µA 100 70 50 3.0 mA 1.0 mA 30 300 µA 20 10 7.0 5.0 30 µA 10 µA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 IC = 10 mA 3.0 mA 1.0 mA 12 300 µA 8.0 100 µA 30 µA 4.0 10 µA BANDWIDTH = 1.0 Hz 0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure 3 h FE, DC CURRENT GAIN (NORMALIZED) MPS6571 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) – 0.4 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 – 0.8 – 1.2 TJ = 25°C to 125°C – 1.6 – 2.0 – 55°C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 – 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS6571 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 MPS6571 Motorola reserves the right to make changes without further notice to any products herein. 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