NSR02L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com 30 V SCHOTTKY BARRIER DIODE Features • • • • • • • • • Very Low Forward Voltage Drop − 400 mV @ 10 mA Low Reverse Current − 0.20 mA @ 10 V VR 200 mA of Continuous Forward Current Power Dissipation of 312 mW with Minimum Trace ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C Very High Switching Speed Low Capacitance − CT = 7 pF This is a Halide−Free Device This is a Pb−Free Device 1 CATHODE 2 ANODE MARKING DIAGRAM PIN 1 DSN2 (0201) CASE 152AA I230 YYY I230 YYY = Specific Device Code = Year Code Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Device NSR02L30NXT5G Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Markets • • • • • Package Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 30 V Forward Current (DC) IF 200 mA Forward Surge Current ESD Rating: (60 Hz @ 1 cycle) Human Body Model Machine Model IFSM ESD A 4.0 >8.0 >400 kV V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 2 1 Publication Order Number: NSR02L30/D NSR02L30NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 400 312 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 170 735 °C/W mW Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT http://onsemi.com 2 Min Typ 0.2 3.0 0.40 0.58 7.0 mA V pF NSR02L30NXT5G TYPICAL CHARACTERISTICS 1.0E+03 150°C 1.0E+02 125°C Ir, REVERSE CURRENT (mA) 100 1.0E+01 10 150°C 1.0E−01 1 75°C 1.0E−04 −25°C 0.1 0.2 0.3 −25°C 1.0E−03 25°C 0.01 0 25°C 1.0E−02 125°C 0.1 0.001 75°C 1.0E+00 0.4 0.5 1.0E−05 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 20 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 TA = 25°C 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 3 25 30 25 30 NSR02L30NXT5G PACKAGE DIMENSIONS DSN2, 0.6x0.3, 0.4P, (0201) CASE 152AA−01 ISSUE O 2X DIM A A1 b D E e L E 0.06 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D 0.06 C TOP VIEW MOUNTING FOOTPRINT* 0.05 C 0.28 A 2X 0.05 C A1 C SIDE VIEW L SEATING PLANE 0.75 e 1 2X MILLIMETERS MIN MAX 0.24 0.30 0.00 0.01 0.22 0.28 0.30 BSC 0.60 BSC 0.40 BSC 0.12 0.18 0.30 0.28 DIMENSIONS: MILLIMETERS 2 2X See Application Note AND8398/D for more mounting details b 0.05 C A B BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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