NSR0240P2T5G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features • Very Low Forward Voltage Drop − 460 mV @ 100 mA Low Reverse Current − 0.2 mA @ 25 V VR 200 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 7 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device 1 CATHODE 2 ANODE MARKING DIAGRAM 2 1 Typical Applications • • • • • 40 V SCHOTTKY BARRIER DIODE SOD−923 CASE 514AB LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection P • • • • • • • 1 MG G 2 P = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 200 mA Non−Repetitive Peak Forward Surge Current IFSM 2.0 A ESD Rating: ESD Human Body Model Machine Model Device Package Shipping† NSR0240P2T5G SOD−923 (Pb−Free) 8000 / Tape & Reel NSVR0240P2T5G SOD−923 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 1C Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 3 1 Publication Order Number: NSR0240P2/D NSR0240P2T5G THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Typ Max Unit RqJA PD 520 240 °C/W mW RqJA PD 175 710 °C/W mW TJ, Tstg −55 to +150 °C Typ Max Unit 0.2 0.8 0.55 5.0 0.365 0.50 0.60 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min mA Reverse Leakage (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF 0.34 0.46 0.54 Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 7.0 pF 1.0E−02 1000 Ir, REVERSE CURRENT (A) 100 125°C 10 150°C 1 0.1 0.01 150°C 1.0E−03 1.0E−04 85°C 125°C 1.0E−05 75°C 1.0E−06 25°C 1.0E−07 1.0E−08 −40°C 1.0E−09 85°C 0.001 0 25°C 0.1 −40°C 0.2 1.0E−10 0.3 0.4 0.5 0 0.6 5 10 15 20 25 30 35 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) V 12 TA = 25°C 10 8 6 4 2 0 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 40 45 40 45 NSR0240P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 INCHES MIN NOM MAX 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 SIDE VIEW SOLDERING FOOTPRINT* 2X L 2X 0.36 2X 1.20 2X 0.25 L2 PACKAGE OUTLINE BOTTOM VIEW DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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