MOTOROLA Order this document by MCR264-4/D SEMICONDUCTOR TECHNICAL DATA MCR264Ć4 thru MCR264Ć10 Thyristors Silicon Controlled Rectifiers SCRs 40 AMPERES RMS 200 thru 800 VOLTS . . . designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 400 Amperes Surge Capability • Blocking Voltage to 800 Volts G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR264-4 MCR264-6 MCR264-8 MCR264-10 Forward Current (TC = 80°C) (All Conduction Angles) Symbol Value VDRM VRRM Unit Volts 200 400 600 800 IT(RMS) IT(AV) 40 25 Amps Peak Non-repetitive Surge Current – 8.3 ms (1/2 Cycle, Sine Wave) 1.5 ms ITSM 400 450 Amps Forward Peak Gate Power PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +150 °C Forward Average Gate Power Forward Peak Gate Current (300 µs, 120 PPS) Operating Junction Temperature Range Storage Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 1 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Typ Max Unit — — — — 10 2 µA mA I DRM , I RRM TJ = 25°C TJ = 125°C Forward “On” Voltage(1) (ITM = 80 A) VTM — 1.4 2 Volts Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = – 40°C) IGT — — 15 30 50 90 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) VGT — 1 1.5 Volts Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (Anode Voltage = 12 Vdc) IH — 30 60 mA Turn-On Time (ITM = 40 A, IGT = 60 mAdc) tgt — 1.5 — µs dv/dt — 50 — V/µs Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%. FIGURE 1 — AVERAGE CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION 50 125 α α = CONDUCTION ANGLE 115 105 dc 95 α = 30° 85 60° 180° 90° 75 0 5.0 10 15 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) 2 25 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE ( ° C) Min 180° 45 40 35 60° 90° dc α = 30° 30 25 20 15 α α = CONDUCTIVE ANGLE 10 5.0 0 0 5.0 10 15 20 25 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Motorola Thyristor Device Data FIGURE 3 — GATE TRIGGER CURRENT FIGURE 4 — NEW GATE TRIGGER VOLTAGE 1.1 VGT , GATE TRIGGER VOLTAGE (VOLTS) I GT , GATE TRIGGER CURRENT (mA) 40 OFF-STATE VOLTAGE = 12 V 20 10 7.0 5.0 4.0 –60 –40 –20 0 20 40 60 80 100 120 OFF-STATE VOLTAGE = 12 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 –60 140 –40 –20 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) IH , HOLDING CURRENT (mA) 70 OFF-STATE VOLTAGE = 12 V 30 20 10 7.0 –60 –40 –20 0 20 40 60 80 20 40 60 80 100 120 140 FIGURE 6 — TYPICAL FORWARD VOLTAGE FIGURE 5 — HOLDING CURRENT 50 0 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 100 120 140 100 TJ = 25°C 10 1.0 0 0.2 0.4 TJ, JUNCTION TEMPERATURE (°C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) FIGURE 7 — THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k t, TIME (ms) Motorola Thyristor Device Data 3 PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A 1 2 3 STYLE 3: PIN 1. 2. 3. 4. U H K Z R L V J G D N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR264/D* MCR264/D