MCR218 D

MCR218-2G, MCR218-4G,
MCR218-6G
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
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SCRs
8 AMPERES RMS
50 thru 400 VOLTS
Features
• Glass-Passivated Junctions
• Blocking Voltage to 400 Volts
• TO-220 Construction − Low Thermal Resistance, High Heat
G
A
Dissipation and Durability
C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Gate Open)
MCR218−2G
MCR218−4G
MCR218−6G
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 70°C)
IT(RMS)
8.0
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Considerations (t = 8.3 ms)
I2 t
26
A2s
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 70°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
Value
MARKING
DIAGRAM
Unit
V
4
50
200
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
1
2
TO−220AB
CASE 221A−09
STYLE 3
3
A
Y
WW
MCR218x
G
AKA
AY WW
MCR218x−G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
x = 2, 4 or 6
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MCR218−2G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−4G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−6G
TO220AB
(Pb−Free)
500 Units/Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
Publication Order Number:
MCR218/D
MCR218−2G, MCR218−4G, MCR218−6G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Max
Unit
RqJC
2.0
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
OFF CHARACTERISTICS
IDRM, IRRM
Peak Repetitive Forward or Reverse Blocking Current
TJ = 25°C
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(ITM = 16 A Peak)
VTM
−
1.5
1.8
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
IGT
−
10
25
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
VGT
−
−
1.5
V
Gate Non−Trigger Voltage
(Rated 12 V, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
−
−
V
IH
−
16
30
mA
dv/dt
−
100
−
V/ms
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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2
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
MCR218−2G, MCR218−4G, MCR218−6G
α
α = CONDUCTION ANGLE
105
95
dc
85
α = 30°
75
0
60°
90° 120°
180°
12
α
dc
α = Conduction Angle
9.0
180°
120°
60°
6.0
90°
α = 30°
3.0
0
0
2.0
3.0
4.0
5.0
6.0
IT(AV), AVG. ON‐STATE CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. On−State Power Dissipation
2
3
4
5
6
7
8
3.0
2.0
VD = 12 Vdc
1.5
1.0
0.9
0.7
0.5
0.4
0.3
-60
15
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
1
-40
-20
0
20
40
60
80
100
120
140
1.0
VD = 12 Vdc
1.0
0.9
0.7
0.5
0.4
0.3
-60
-40
-20
0
20
60
80
100
Figure 4. Typical Gate Trigger Voltage
versus Temperature
3.0
2.0
VD = 12 Vdc
1.5
1.0
0.9
0.7
0.5
-20
40
TJ, JUNCTION TEMPERATURE (°C)
4.0
-40
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current
versus Temperature
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3
8.0
1.2
Figure 3. Typical Gate Trigger Current
versus Temperature
0.4
-60
7.0
1.3
TJ, JUNCTION TEMPERATURE (°C)
I H , NORMALIZED HOLDING CURRENT (mA)
I GT , NORMALIZED GATE TRIGGER CURRENT (mA)
P(AV), AVERAGE ON‐STATE POWER DISSIPATION
(WATTS)
115
V GT , NORMALIZED GATE TRIGGER VOLTAGE
°
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (C)
125
120
140
120
140
MCR218−2G, MCR218−4G, MCR218−6G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
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4
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Sales Representative
MCR218/D