Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MCR101
SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS

DESCRIPTION
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thrusters, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.

FEATURES
*Sensitive Gate Allows Triggering by Micro Controllers and other
Logic Circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
*Immunity to dV/dt – 20V/sec Minimum at 110C
*Glass-Passivated Surface for Reliability and Uniformity

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MCR101L-x-xx-T92-B
MCR101G-x-xx-T92-B
MCR101L-x-xx-T92-K
MCR101G-x-xx-T92-K
Note: Pin Assignment: G: Gate

A: Anode
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
A
K
G
A
K
Packing
Tape Box
Bulk
K: Cathode
MARKING
MCR100-4
MCR100-6
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MCR100-8
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SCR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note)
(TJ=-40 to 110C, Sine Wave, 50 to 60Hz; Gate
Open)
SYMBOL
RATINGS
UNIT
MCR101-4
200
V
MCR101-6 VDRM,VRRM
400
MCR101-8
600
On-Sate RMS Current (TC=80C) 180 Condition Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current
ITSM
10
A
(1/2 cycle, Sine Wave, 60Hz, TJ=25C)
Circuit Fusing Considerations (t=8.3 ms)
I2t
0.415
A2 s
Forward Peak Gate Power (TA=25C, Pulse Width 1.0μs)
PGM
0.1
W
Forward Average Gate Power (TA=25C, t=8.3ms)
PG(AV)
0.1
W
Peak Gate Current – Forward (TA=25C, Pulse Width1.0μs)
IGM
1
A
Peak Gate Voltage – Reverse (TA=25C, Pulse Width1.0μs)
VGRM
5
V
Operating Junction Temperature @ Rated VRRM and VDRM
TJ
-40 ~ +110
C
Storage Temperature
TSTG
-40 ~ +150
C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATING
200
75
UNIT
C/W
C/W
ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
TC=25C
Peak Forward or Reverse
IDRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ
Blocking Current
TC=125C
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
VTM
ITM=1A Peak @ TA=25C
Gate Trigger Current (Continuous dc)
IGT
VAK=7Vdc, RL=100Ω, TC=25C
TC=25 C
Holding Current
VAK=7Vdc, initiating current=20mA
IH
TC=-40 C
TC=25C
Latch Current
VAK=7V, Ig=200A
IL
TC=-40 C
TC=25 C
Gate Trigger Current
VAK=7Vdc, RL=100Ω
VGT
(continuous dc)
TC=-40 C
DYNAMIC CHARACTERISTICS
VD=Rated VDRM, Exponential
Critical Rate of Rise of Off-State Voltage
dV/dt
Waveform, RGK=1000Ω, TJ=110C
IPK=20A, Pw=10μsec
Critical Rate of Rise of On-State Current
di/dt
diG/dt=1A/μsec, Igt=20mA
Note: Indicates Pulse Test Width1.0ms, duty cycle 1%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
10
100
40
0.5
0.6
0.62
20
1.7
200
5
10
10
15
0.8
1.2
35
μA
V
μA
mA
mA
V
V/μs
50
A/μs
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VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
VDRM
IDRM
VRRM
IRRM
VTM
IH
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
+ Current
Anode +
VTM
on state
IH
IRRM at VRRM
+ Voltage
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode -

IDRM at VDRM
Forward Blocking Region
(off state)
CLASSIFICATION OF IGT
RANK
RANGE
B
48~105μA
C
95~200μA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
AA
8~16μA
AB
14~21μA
AC
19~25μA
AD
23~52μA
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TYPICAL CHARACTERISTICS
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
0.9
Gate Trigger Voltage (Volts)
1.0
90
Gate Trigger Current (μA)
100
80
70
60
50
40
30
20
10
-40 -25 -10 5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5
20 25 50 65 80 95 110
20 25 50 65 80 95 110
Junction Temperature, TJ (℃)
Instantaneous On-State Current, IT
(AMPS)
Holding Current (μA)
Latching Current (μA)
Junction Temperature, TJ (℃)
Maximum Allowable Case
Temperature, TC (℃)

SCR
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MCR101
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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