Triacs

MAC4M, MAC4N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 4.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• High Surge Current Capability – 40 Amperes
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.0 A/ms minimum at 125°C
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC4M, Date Code
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TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4M
MAC4N
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
IT(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
4
Volts
600
800
4.0
Amps
ITSM
40
Amps
I2t
6.6
A2sec
PGM
0.5
Watt
PG(AV)
0.1
Watt
TJ
– 40 to
+125
°C
Tstg
– 40 to
+150
°C
1
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2
Package
Shipping
MAC4M
TO220AB
50 Units/Rail
MAC4N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
Publication Order Number:
MAC4M/D
MAC4M, MAC4N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Symbol
Value
Unit
RθJC
RθJA
2.2
62.5
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
0.01
2.0
—
1.3
1.6
8.0
8.0
8.0
12
16
21
35
35
35
6.0
20
35
—
—
—
25
40
20
60
80
60
0.5
0.5
0.5
0.8
0.8
0.8
1.3
1.3
1.3
(di/dt)c
6.0
8.4
—
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
dv/dt
500
1500
—
V/µs
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
di/dt
—
—
10
A/µs
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM = ± 6.0 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/µs, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC4M, MAC4N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
IDRM
Peak Forward Blocking Current
VRRM
IRRM
VTM
IH
VTM
Peak Repetitive Forward Off State Voltage
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
off state
IH
Holding Current
Quadrant 3
VTM
MainTerminal 2 –
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
IGT –
+ IGT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
MAC4M, MAC4N
1.1
VGT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
Q3
Q1
10
1
– 40 – 25 – 10
5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1.0
Q3
0.9
Q2
0.8
Q1
0.7
0.6
0.5
0.4
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
Q2
IH, HOLDING CURRENT (mA)
IL , LATCHING CURRENT (mA)
100
Q1
Q3
10
MT2 Positive
MT2 Negative
10
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Typical Latching Current
versus Junction Temperature
TC , CASE TEMPERATURE (°C)
125
120
30°
115
60°
90°
120°
110
180°
105
DC
0
0.5
1
1.5
2
2.5
3
3.5
IT(RMS), RMS ON-STATE CURRENT (AMPS)
4
6
DC
5
180°
120°
4
90°
60°
3
30°
2
1
0
0
Figure 5. Typical RMS Current Derating
1
2
3
0.5
1.5
2.5
3.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. On-State Power Dissipation
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4
4
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
Maximum @ TJ = 25°C
Typical @ TJ = 25°C
Maximum @ TJ = 125°C
10
1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MAC4M, MAC4N
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0
1
2
3
4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
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5
10000
MAC4M, MAC4N
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
–T–
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 4:
PIN 1.
2.
3.
4.
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6
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
MAC4M, MAC4N
Notes
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7
MAC4M, MAC4N
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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MAC4M/D