MICROCHIP TC4421AVMF713

TC4421A/TC4422A
9A High-Speed MOSFET Drivers
Features
General Description
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagation Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current
buffer/drivers capable of driving large MOSFETs and
Insulated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
Applications
•
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
LF Initiator
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Package Types(1)
8-Pin DFN(2) TC4421A TC4422A
VDD
INPUT
NC
GND
1
8 VDD
2 TC4421A 7 OUTPUT
3 TC4422A 6 OUTPUT
4
5 GND
VDD
OUTPUT
OUTPUT
GND
VDD 1
INPUT 2
NC 3
GND 4
TC4421A
TC4422A
VDD
7
OUTPUT OUTPUT
6
OUTPUT OUTPUT
5
GND
2: Exposed pad of the DFN package is electrically isolated.
© 2005 Microchip Technology Inc.
Tab is
Common
to VDD
VDD
8
Note 1: Duplicate pins must both be connected for proper operation.
5-Pin TO-220
TC4421A
TC4422A
GND
INPUT
GND
VDD
GND
OUTPUT
TC4421A TC4422A
8-Pin
PDIP/SOIC
DS21946A-page 1
TC4421A/TC4422A
Functional Block Diagram
VDD
TC4421A
Inverting
130 µA
300 mV
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
Output
TC4422A
Non-Inverting
Input
4.7V
GND
Effective
Input
C = 25 pF
DS21946A-page 2
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)................................... 50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–10
—
+10
µA
Input Voltage
VIN
–5
—
VDD – 0.3
V
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
1.25
1.5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
0.8
1.1
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
10.0
—
A
VDD = 18V
Continuous Output Current
IDC
2
—
—
A
10V ≤ VDD ≤ 18V, TA = +25°C
(TC4421A/TC4422A CAT only)
(Note 2)
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µsec
tR
—
28
34
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
26
32
ns
Figure 4-1, CL = 10,000 pF
Propagation Delay Time
tD1
—
38
45
ns
Figure 4-1, CL = 10,000 pF
tD2
—
42
49
ns
Figure 4-1, CL = 10,000 pF
Input
0V ≤ VIN ≤ VDD
Output
Switching Time (Note 1)
Rise Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
IS
VDD
—
130
250
µA
VIN = 3V
—
35
100
µA
VIN = 0V
4.5
—
18
V
Switching times ensured by design.
Tested during characterization, not production tested.
© 2005 Microchip Technology Inc.
DS21946A-page 3
TC4421A/TC4422A
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–10
—
+10
µA
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
—
2.0
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
—
1.6
Ω
IOUT = 10 mA, VDD = 18V
tR
—
38
45
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
33
40
ns
Figure 4-1, CL = 10,000 pF
Propagation Delay Time
tD1
—
50.4
60
ns
Figure 4-1, CL = 10,000 pF
Propagation Delay Time
tD2
—
53
60
ns
Figure 4-1, CL = 10,000 pF
IS
—
200
500
µA
VIN = 3V
—
50
150
µA
VIN = 0V
4.5
—
18
V
0V ≤ VIN ≤ VDD
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
VDD
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range (V)
TA
–40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
TA
–65
—
+150
°C
Conditions
Temperature Ranges
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
θJA
—
71
—
°C/W
Without heat sink
Thermal Resistance, 8L-6x5 DFN
θJA
—
33.2
—
°C/W
Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
θJA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
155
—
°C/W
DS21946A-page 4
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
300
250
140
120
Fall Time (ns)
Rise Time (ns)
180
160
22,000 pF
100
80
60
10,000 pF
40
20
1,000 pF
6
100 pF
8
10
150
10V
100
15V
50
0
4
5V
200
12
14
16
0
100
18
1000
Supply Voltage (V)
Rise Time vs. Supply
FIGURE 2-4:
Load.
300
55
250
50
Fall Time vs. Capacitive
VDD = 15V
5V
45
200
10V
150
100
40
tRISE
35
30
15V
50
tFALL
25
0
100
20
1000
10000
100000
-40 -25 -10
Capacitive Load (pF)
FIGURE 2-2:
Load.
5
20 35 50 65 80 95 110 125
Temperature (°C)
Rise Time vs. Capacitive
FIGURE 2-5:
Temperature.
Rise and Fall Times vs.
1E-7
10-7
Crossover Energy (A·sec)
180
160
140
Fall Time (ns)
100000
Capacitive Load (pF)
Time (ns)
Rise Time (ns)
FIGURE 2-1:
Voltage.
10000
120
22,000 pF
100
80
60
10,000 pF
40
1,000 pF
20
100 pF
1E-8
10-8
1E-9
10-9
0
4
6
8
10
12
14
16
18
4
Supply Voltage (V)
FIGURE 2-3:
Voltage.
Fall Time vs. Supply
© 2005 Microchip Technology Inc.
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-6:
Voltage.
Crossover Energy vs Supply
DS21946A-page 5
TC4421A/TC4422A
140
80
75
70
65
60
55
50
45
40
35
30
CLOAD = 10,000 pF
120
IQUIESCENT (µA)
Propagation Delay (nS)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
tD2
tD1
INPUT = High
100
80
60
INPUT = Low
40
20
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
FIGURE 2-7:
Supply Voltage.
Propagation Delay vs.
65
IQUIESCENT (µA)
Propagation Delay (ns)
VDD = 12V
70
60
55
tD2
tD1
45
40
2
3
4
5
6
7
8
9
220
200
180
160
140
120
100
80
60
40
20
55
Propagation Delay vs. Input
VDD = 12V
VIN = 5V
CLOAD = 10,000 pF
50
tD2
45
tD1
40
35
30
-40 -25 -10
5
DS21946A-page 6
18
INPUT = Low
5
20 35 50 65 80 95 110 125
Propagation Delay vs.
20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-11:
vs. Temperature.
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Quiescent Supply Current
VDD = 12V
VIH
VIL
-40 -25 -10
Temperature (°C)
FIGURE 2-9:
Temperature.
16
INPUT = High
-40 -25 -10
10
Input Threshold (V)
Propagation Delay (ns)
60
14
VDD = 18V
Input Amplitude (V)
FIGURE 2-8:
Amplitude.
12
FIGURE 2-10:
Quiescent Supply Current
vs. Supply Voltage.
75
50
10
Supply Voltage (V)
5
20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-12:
Temperature.
Input Threshold vs.
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
180
Supply Current (mA)
Input Threshold (V)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
VIH
VIL
4
6
8
10
12
14
16
160
VDD = 18V
120
Input Threshold vs. Supply
VIN = 5V (TC4422A)
VIN = 0V (TC4421A)
TJ = 150°C
TJ = 25°C
4
6
8
10
12
14
60
16
Supply Current (mA)
ROUT-LO (:)
2.0
1.5
TJ = 25°C
0.5
0.0
4
6
8
10
12
14
Supply Voltage (V)
FIGURE 2-15:
Low-State Output
Resistance vs. Supply Voltage.
© 2005 Microchip Technology Inc.
10,000
100,000
200
VDD = 12V
180
160
140
120
100
80
60
40
20
0
100
200 kHz
2 MHz
1 MHz
100 kHz
50 kHz
10 kHz
1,000
10,000
100,000
FIGURE 2-17:
Supply Current vs.
Capactive Load (VDD = 12V).
TJ = 150°C
1.0
1,000
Capacitive Load (pF)
VIN = 0V (TC4422A)
VIN = 5V (TC4421A)
2.5
10 kHz
FIGURE 2-16:
Supply Current vs.
Capactive Load (VDD = 18V).
18
FIGURE 2-14:
High-State Output
Resistance vs. Supply Voltage.
3.0
50 kHz
40
Supply Voltage (V)
3.5
100 kHz
Capacitive Load (pF)
Supply Current (mA)
ROUT-HI (:)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 MHz
80
Supply Voltage (V)
FIGURE 2-13:
Voltage.
2 MHz
100
20
0
100
18
200 kHz
140
16
18
220
VDD = 6V
200
180
160
140
120
100
80
60
40
20
0
100
1 MHz
2 MHz
200 kHz
100 kHz
50 kHz
10 kHz
1,000
10,000
100,000
Capacitive Load (pF)
FIGURE 2-18:
Supply Current vs.
Capactive Load (VDD = 6V).
DS21946A-page 7
TC4421A/TC4422A
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
160
VDD = 18V
10,000 pF
Supply Current (mA)
Supply Current (mA)
180
47,000 pF
140
22,000 pF
120
100
1000 pF
0.1 µF
80
60
40
470 pF
20
0
10
100
1000
10000
Frequency (kHz)
Supply Current (mA)
VDD = 6V
22,000 pF
47,000 pF
10,000 pF
0.1 µF
1000 pF
470 pF
10
100
1000
10000
Frequency (kHz)
FIGURE 2-21:
Supply Current vs.
Frequency (VDD = 6V).
FIGURE 2-19:
Supply Current vs.
Frequency (VDD = 18V).
200
180
160
140
120
100
80
60
40
20
0
220
200
180
160
140
120
100
80
60
40
20
0
VDD = 12V
10,000 pF
47,000 pF
22,000 pF
0.1 µF
1000 pF
470 pF
10
100
1000
10000
Frequency (kHz)
FIGURE 2-20:
Supply Current vs.
Frequency (VDD = 12V).
DS21946A-page 8
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
8-Pin PDIP,
SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220
Symbol
1
1
—
VDD
2
2
1
INPUT
3
3
—
NC
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
CMOS push-pull output
7
7
—
OUTPUT
CMOS push-pull output
3.1
Description
Supply input, 4.5V to 18V
Control input, TTL/CMOS-compatible input
No connection
8
8
3
VDD
Supply input, 4.5V to 18V
—
PAD
—
NC
Exposed metal pad
—
—
TAB
VDD
Metal tab is at the VDD potential
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.3
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
CMOS Push-Pull Output
Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB) to aid in
heat removal from the package.
3.6
Metal Tab
The metal tab of the TO-220 package is connected to
the VDD potential of the device. This connection to VDD
can be used as a current carrying path for the device.
© 2005 Microchip Technology Inc.
DS21946A-page 9
TC4421A/TC4422A
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0.1 µF
0V
0.1 µF
4.7 µF
2 Input
Output 6
Output 7
GND
4
+18V
tD1
tD2
tF
tR
90%
90%
Output
1
8
VDD VDD
Input
10%
10%
10%
0V
Inverting Driver
Output
CL = 10,000 pF
GND
5
TC4421A
+5V
Input
0V
+18V
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
90%
10%
tD1 90%
tR
Output
0V
10%
tD2
90%
tF
10%
Non-Inverting Driver
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
FIGURE 4-1:
DS21946A-page 10
TC4422A
Switching Time Test Circuits.
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN
XXXXXXX
XXXXXXX
XXYYWW
NNN
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
e3
*
Note:
TC4421A
XXXXXXXXX
e3
VAT^^
0514256
Example:
TC4421A
VMF^e3
0514
256
8-Lead PDIP (300 mil)
Legend: XX...X
Y
YY
WW
NNN
Example:
Example:
TC4421A
PA e^3 256
0514
Example:
TC4421A
SN e3 0514
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc.
DS21946A-page 11
TC4421A/TC4422A
5-Lead Plastic Transistor Outline (AT) (TO-220)
L
H1
Q
b
e3
e1
E
e
ØP
EJECTOR PIN
a (5X)
C1
A
J1
F
D
Units
Dimension Limits
e
Lead Pitch
Overall Lead Centers
Space Between Leads
Overall Height
Overall Width
Overall Length
Flag Length
Flag Thickness
Through Hole Center
Through Hole Diameter
Lead Length
Base to Bottom of Lead
Lead Thickness
Lead Width
Mold Draft Angle
e1
e3
A
E
D
H1
F
Q
P
L
J1
C1
b
a
INCHES*
MAX
MIN
.060
.072
.263
.273
.030
.040
.190
.160
.385
.415
.560
.590
.234
.258
.045
.055
.103
.113
.146
.156
.560
.540
.090
.115
.022
.014
.025
.040
3°
7°
MILLIMETERS
MIN
MAX
1.52
1.83
6.68
6.93
0.76
1.02
4.06
4.83
9.78
10.54
14.22
14.99
5.94
6.55
1.14
1.40
2.62
2.87
3.71
3.96
13.72
14.22
2.29
2.92
0.36
0.56
0.64
1.02
3°
7°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
DS21946A-page 12
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
© 2005 Microchip Technology Inc.
DS21946A-page 13
TC4421A/TC4422A
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21946A-page 14
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
© 2005 Microchip Technology Inc.
DS21946A-page 15
TC4421A/TC4422A
NOTES:
DS21946A-page 16
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
APPENDIX A:
REVISION HISTORY
Revision A (May 2005)
• Original Release of this Document.
© 2005 Microchip Technology Inc.
DS21946A-page 17
TC4421A/TC4422A
NOTES:
DS21946A-page 18
© 2005 Microchip Technology Inc.
TC4421A/TC4422A
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
Package
Tape & Reel
Device:
TC4421A: 9A High-Speed MOSFET Driver, Inverting
TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting
Temperature Range:
V
Package: *
AT
= TO-220, 5-lead
MF
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
OA
= Plastic SOIC (150 mil Body), 8-lead
OA713 = Plastic SOIC (150 mil Body), 8-lead
(Tape and Reel)
= -40°C to +125°C
*All package offerings are Pb Free (Lead Free).
© 2005 Microchip Technology Inc.
Examples:
a)
TC4421AVAT:
9A High-Speed Inverting
MOSFET Driver,
TO-220 package,
-40°C to +125°C.
b)
TC4421AVOA: 9A High-Speed Inverting
MOSFET Driver,
SOIC package,
-40°C to +125°C.
c)
TC4421AVMF: 9A High-Speed Inverting
MOSFET Driver,
DFN package,
-40°C to +125°C.
a)
TC4422AVPA: 9A High-Speed
Non-Inverting MOSFET
Driver, PDIP package,
-40°C to +125°C.
b)
TC4422AVOA: 9A High-Speed
Non-Inverting
MOSFET Driver,
SOIC package,
-40°C to +125°C.
c)
TC4422AVMF: 9A High-Speed
Non-Inverting MOSFET
Driver, DFN package,
-40°C to +125°C.
DS21946A-page 19
TC4421A/TC4422A
NOTES:
DS21946A-page 20
© 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,
Smart Serial, SmartTel, Total Endurance and WiperLock are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2005 Microchip Technology Inc.
DS21946A-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
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EUROPE
Corporate Office
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Technical Support:
http://support.microchip.com
Web Address:
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04/20/05
DS21946A-page 22
© 2005 Microchip Technology Inc.