DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2771 MMIC wideband amplifier Product specification Supersedes data of 2001 Oct 19 2002 Aug 06 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 FEATURES PINNING Internally matched PIN Wide frequency range DESCRIPTION 1 Very flat gain High output power High linearity Unconditionally stable. VS 2, 5 GND2 3 RF out 4 GND1 6 RF in APPLICATIONS 6 Cable systems 5 4 1 LNB IF amplifiers 6 General purpose ISM. 1 2 Top view 3 4 3 2, 5 MAM455 DESCRIPTION Marking code: G4-. Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage CONDITIONS TYP. 3 MAX. 4 UNIT V IS DC supply current 33.3 mA s212 insertion power gain f = 1 GHz 21.4 dB NF noise figure f = 1 GHz 4.5 dB PL(sat) saturated load power f = 1 GHz 13.2 dBm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2002 Aug 06 2 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VS DC supply voltage IS supply current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature PD maximum drive power CONDITIONS MIN. RF input AC coupled Ts 80 C MAX. UNIT 4 V 50 mA 200 mW 65 +150 C 150 C 10 dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS VALUE UNIT 300 K/W MAX. UNIT Ptot = 200 mW; Ts 80 C CHARACTERISTICS VS = 3 V; IS = 33 mA; f = 1 GHz; Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain CONDITIONS MIN. 29 TYP. 33.3 45 mA f = 1 GHz 21.4 dB f = 2 GHz 20.8 dB RL IN return losses input f = 1 GHz 17 dB f = 2 GHz 13 dB RL OUT return losses output f = 1 GHz 9 dB f = 2 GHz 9 dB NF noise figure f = 1 GHz 4.5 dB f = 2 GHz 4.7 dB 2.4 GHz BW bandwidth at s212 3 dB below flat gain at 1 GHz PL(sat) saturated load power f = 1 GHz 13.2 dBm f = 2 GHz 10.5 dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz 12.1 dBm at 1 dB gain compression; f = 2 GHz 8.4 dBm IP3(in) IP3(out) 2002 Aug 06 input intercept point output intercept point f = 1 GHz 0.5 dBm f = 2 GHz 4.3 dBm f = 1 GHz 21.9 dBm f = 2 GHz 16.5 dBm 3 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 APPLICATION INFORMATION In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. Figure 2 shows a typical application circuit for the BGA2771 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. DC-block handbook, halfpage The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. DC-block 100 pF 100 pF DC-block 100 pF input output MGU437 Fig.3 Simple cascade circuit. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. mixer handbook, halfpage from RF circuit to IF circuit or demodulator wideband amplifier MGU438 oscillator Fig.4 IF amplifier application. Vshalfpage handbook, C1 L1 Vs RF in RF input RF out C2 RF output C3 GND1 GND2 mixer handbook, halfpage to IF circuit or demodulator antenna MGU436 LNA wideband amplifier MGU439 oscillator Fig.2 Typical application circuit. Fig.5 RF amplifier application. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. from modulation or IF circuit The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). to power amplifier wideband amplifier MGU440 oscillator As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). 2002 Aug 06 mixer handbook, halfpage Fig.6 Power amplifier driver application. 4 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 3 GHz 1 100 MHz 2 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MGU457 1.0 −90° IS = 33.4 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 100 MHz 3 GHz 180° 0.2 0 0.2 1 2 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MGU458 −90° IS = 33.4 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.8 Output reflection coefficient (s22); typical values. 2002 Aug 06 5 1.0 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 MGU459 0 12 (dB) s21 2 (dB) −20 20 −40 10 −60 MGU460 30 handbook, halfpage handbook, halfpage s 2 0 0 1000 2000 0 3000 1000 f (MHz) IS = 33.4 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.9 IS = 33.4 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. MGU461 20 handbook, halfpage PL (dBm) PL (dBm) 10 10 0 0 −10 −10 −30 −20 −10 MGU462 20 handbook, halfpage −20 −40 3000 2000 f (MHz) −20 −40 0 PD (dBm) −30 −20 −10 0 PD (dBm) VS = 3 V; f = 1 GHz; ZO = 50 VS = 3 V; f = 2 GHz; ZO = 50 Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. 2002 Aug 06 6 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 MGU463 10 MGU464 5 handbook, halfpage handbook, halfpage NF (dB) K 8 4 6 3 4 2 2 1 0 0 0 1000 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 IS = 33.4 mA; VS = 3 V; ZO = 50 IS = 33.4 mA; VS = 3 V; ZO = 50 Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Scattering parameters IS = 33.4 mA; VS = 3 V; PD = 30 dBm; ZO = 50 ; Tamb = 25 C. f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.09328 62.11 10.336 25.98 0.02953 13.71 0.50404 29.78 200 0.09722 25.33 11.266 5.910 0.02687 6.556 0.35904 16.09 400 0.10224 5.155 11.693 13.69 0.02437 0.870 0.31417 10.34 600 0.10707 1.282 11.806 27.51 0.02288 1.273 0.32541 29.56 800 0.12009 0.985 11.851 40.46 0.02176 3.809 0.34755 44.52 1000 0.13693 1.692 11.931 53.00 0.02174 8.643 0.36785 56.69 1200 0.15676 3.594 11.990 65.95 0.02229 11.84 0.37169 68.24 1400 0.17873 4.299 12.036 79.54 0.02341 13.89 0.36720 79.76 1600 0.20322 3.166 11.953 93.52 0.02492 15.56 0.35425 92.62 1800 0.21560 0.032 11.755 108.7 0.02645 13.77 0.33802 107.7 2000 0.20901 2.617 11.224 124.7 0.02676 11.10 0.32517 125.3 2200 0.18846 5.529 10.499 140.3 0.02653 9.411 0.32259 145.1 2400 0.14965 1.870 9.2991 156.2 0.02605 6.749 0.33529 164.4 2600 0.11394 11.81 7.8388 169.3 0.02388 3.622 0.37019 178.5 2800 0.11394 36.35 6.7932 178.5 0.02139 6.039 0.39826 165.2 3000 0.13292 50.28 5.9348 174.2 0.01987 12.49 0.44613 156.5 2002 Aug 06 7 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Aug 06 REFERENCES IEC JEDEC JEITA SC-88 8 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 2002 Aug 06 9 NXP Semiconductors Product specification MMIC wideband amplifier BGA2771 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp11 Date of release: 2002 Aug 06