PHILIPS BGA2712

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2712
MMIC wideband amplifier
Product specification
Supersedes data of 2002 Jan 31
2002 Sep 10
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
PINNING
FEATURES
• Internally matched to 50 Ω
PIN
• Wide frequency range (3.2 GHz at 3 dB bandwidth)
DESCRIPTION
1
• Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
VS
2, 5
GND2
• 5 dBm saturated output power at 1 GHz
3
RF out
• Good linearity (11 dBm IP3(out) at 1 GHz)
4
GND1
6
RF in
• Unconditionally stable (K > 1.5).
APPLICATIONS
6
5
4
1
• LNB IF amplifiers
• Cable systems
6
3
• ISM
• General purpose.
1
2
Top view
DESCRIPTION
4
3
2, 5
MAM455
Marking code: E2-.
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
5
6
V
IS
DC supply current
12.3
−
mA
s212
insertion power gain
f = 1 GHz
21.3
−
dB
NF
noise figure
f = 1 GHz
3.9
−
dB
PL(sat)
saturated load power
f = 1 GHz
4.8
−
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
VS
DC supply voltage
IS
supply current
CONDITIONS
RF input AC coupled
Ts ≤ 90 °C
MIN.
MAX.
UNIT
−
6
V
−
35
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
PD
maximum drive power
−
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 10
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
VALUE
UNIT
300
K/W
MAX.
UNIT
Ptot = 200 mW; Ts ≤ 90 °C
CHARACTERISTICS
VS = 5 V; IS = 12.3 mA; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IS
supply current
s212
insertion power gain
RL IN
return losses input
RL OUT
return losses output
s122
isolation
CONDITIONS
MIN.
TYP.
9
12.3
15
mA
f = 100 MHz
20
20.8
22
dB
f = 1 GHz
20
21.3
22
dB
f = 1.8 GHz
20
22
23
dB
f = 2.2 GHz
20
22
23
dB
f = 2.6 GHz
19
21.2
22
dB
f = 3 GHz
16
19.3
21
dB
f = 1 GHz
12
14
−
dB
f = 2.2 GHz
8
10
−
dB
f = 1 GHz
17
20
−
dB
f = 2.2 GHz
15
18
−
dB
f = 1.6 GHz
31
33
−
dB
f = 2.2 GHz
36
39
−
dB
NF
noise figure
f = 1 GHz
−
3.9
4.3
dB
f = 2.2 GHz
−
4.3
4.7
dB
BW
bandwidth
at s212 −3 dB below flat gain at 1 GHz 2.8
3.2
−
GHz
K
stability factor
f = 1 GHz
2
−
−
f = 2.2 GHz
2.5
3
−
−
PL(sat)
saturated load power
f = 1 GHz
3
4.8
−
dBm
f = 2.2 GHz
0
1.3
−
dBm
at 1 dB gain compression; f = 1 GHz
−2
0.2
−
dBm
at 1 dB gain compression; f = 2.2 GHz
−4
−2
−
dBm
f = 1 GHz
−12
−10
−
dBm
f = 2.2 GHz
−14
−16
−
dBm
PL 1 dB
IP3(in)
IP3(out)
2002 Sep 10
load power
input intercept point
output intercept point
1.5
f = 1 GHz
9
11
−
dBm
f = 2.2 GHz
4
6
−
dBm
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
DC-block
handbook, halfpage
DC-block
100 pF
100 pF
DC-block
100 pF
input
output
MGU437
The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.
Fig.3 Easy cascading application circuit.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
mixer
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
wideband
amplifier
Vshalfpage
handbook,
MGU438
oscillator
C1
Vs
RF in
RF input
Fig.4 Application as IF amplifier.
RF out
C2
RF output
C3
GND1
GND2
MGU435
mixer
handbook, halfpage
Fig.2 Typical application circuit.
to IF circuit
or demodulator
antenna
LNA
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
wideband
amplifier
MGU439
oscillator
Fig.5 Application as RF amplifier.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
mixer
handbook, halfpage
from modulation
or IF circuit
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
to power
amplifier
wideband
amplifier
MGU440
oscillator
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
2002 Sep 10
Fig.6 Application as driver amplifier.
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
180°
0.5 100 MHz
0.2
0
2
5
0°
0
4 GHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD904
1.0
−90°
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.7 Input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
4 GHz
2
5
0°
0
100 MHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD905
−90°
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.8 Output reflection coefficient (s22); typical values.
2002 Sep 10
5
1.0
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
MLD906
0
MLD907
25
handbook, halfpage
s 2
handbook, halfpage
12
(dB)
−10
s21 2
(dB)
20
−20
(1)
(2)
−30
15
(3)
−40
−50
10
0
1000
2000
3000
4000
0
1000
2000
3000
f (MHz)
Isolation (s122) as a function of frequency;
typical values.
Fig.10 Insertion gain (s212) as a function of
frequency; typical values.
MLD908
10
MLD909
10
handbook, halfpage
handbook, halfpage
PL
(dBm)
PL
(dBm)
(1)
5
5
(2)
(1)
(2)
(3)
0
0
−5
−5
−10
−30
4000
PD = −30 dBm; ZO = 50 Ω.
(1) IS = 15.1 mA; VS = 5.5 V.
(2) IS = 12.3 mA; VS = 5 V.
(3) IS = 10.1 mA; VS = 4.5 V.
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.9
f (MHz)
−20
−10
PD (dBm)
−10
−30
0
(3)
−20
−10
PD (dBm)
0
f = 1 GHz; ZO = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
f = 2.2 GHz; ZO = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Sep 10
6
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
MLD902
6
MLD903
10
handbook, halfpage
handbook, halfpage
NF
K
(dB)
8
5
6
(1)
4
(3)
(2)
4
3
2
0
2
0
1000
2000
f (MHz)
0
3000
ZO = 50 Ω.
(1) IS = 15.1 mA; VS = 5.5 V.
(2) IS = 12.3 mA; VS = 5 V.
(3) IS = 10.1 mA; VS = 4.5 V.
2000
3000
4000
f (MHz)
IS = 12.3 mA; VS = 5 V; ZO = 50 Ω.
Fig.13 Noise figure as a function of frequency;
typical values.
2002 Sep 10
1000
Fig.14 Stability factor as a function of frequency;
typical values.
7
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s12
s22
KFACTOR
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.04752
−13.48
10.9826
−1.753
0.03355
−2.342
0.07706
−170.0
1.5
200
0.05643
22.73
11.0172
−6.898
0.03308
−7.340
0.07237
164.8
1.5
400
0.09546
39.62
11.0842
−15.64
0.03111
−15.47
0.07314
130.7
1.6
600
0.13547
37.16
11.1812
−24.08
0.02829
−21.84
0.07471
101.8
1.7
800
0.17466
32.62
11.3239
−32.64
0.02501
−26.57
0.08218
72.30
1.9
1000
0.20739
27.40
11.5760
−41.38
0.02145
−30.44
0.10113
47.04
2.0
1200
0.24036
23.23
11.8439
−50.97
0.01788
−31.20
0.11792
25.82
2.3
1400
0.26469
18.36
12.1222
−61.14
0.01489
−28.60
0.13314
10.96
2.6
8
1600
0.29368
13.54
12.3892
−72.07
0.01262
−22.41
0.14376
−1.624
3.0
1800
0.31261
8.127
12.5808
−83.89
0.01132
−12.86
0.14606
−13.51
3.2
2000
0.31986
1.984
12.6359
−96.79
0.01102
−2.369
0.13749
−24.90
3.2
2200
0.32544
−4.878
12.4802
−110.7
0.01151
5.585
0.11928
−37.21
3.1
2400
0.31554
−13.05
12.2649
−125.2
0.01238
9.990
0.08992
−51.50
3.0
2600
0.29374
−21.53
11.5087
−139.8
0.01322
11.44
0.05626
−68.53
3.1
2800
0.26599
−28.39
10.4126
−152.8
0.01362
10.70
0.02424
−110.2
3.3
3000
0.21222
−31.80
9.17830
−163.8
0.01335
9.622
0.02731
159.1
4.0
3200
0.17076
−31.52
8.12024
−171.0
0.01239
10.22
0.04752
135.0
4.9
3400
0.14479
−32.14
7.38827
−176.5
0.01150
15.36
0.06279
132.1
5.8
3600
0.11730
−35.25
6.96284
177.3
0.01108
19.97
0.07643
142.1
6.4
3800
0.08946
−46.06
6.62125
171.3
0.01107
27.62
0.09760
153.5
6.7
4000
0.06606
−64.65
6.32249
165.6
0.01178
34.46
0.12925
160.6
6.6
Philips Semiconductors
s21
s11
f (MHz)
MMIC wideband amplifier
2002 Sep 10
Scattering parameters
VS = 5 V; IS = 12.3 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C;
Product specification
BGA2712
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Sep 10
REFERENCES
IEC
JEDEC
EIAJ
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 10
10
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
NOTES
2002 Sep 10
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp12
Date of release: 2002
Sep 10
Document order number:
9397 750 10022