BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 FEATURES PINNING • Internally matched PIN • Very wide frequency range DESCRIPTION 1 • Very flat gain • High gain • High output power • Unconditionally stable. VS 2, 5 GND2 3 RF out 4 GND1 6 RF in APPLICATIONS 6 • Cable systems 5 4 1 • LNB IF amplifiers 6 • General purpose • ISM. 1 2 Top view 3 4 3 2, 5 MAM455 DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Marking code: G5-. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage CONDITIONS TYP. MAX. UNIT 5 6 V IS DC supply current 24.4 − mA s212 insertion power gain f = 1 GHz 23.2 − dB NF noise figure f = 1 GHz 4.9 − dB PL(sat) saturated load power f = 1 GHz 10.5 − dBm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Rev. 04 – 29 August 2007 2 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VS DC supply voltage IS supply current CONDITIONS MIN. RF input AC coupled Ts ≤ 80 °C MAX. UNIT − 6 V − 34 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C PD maximum drive power − 10 dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to solder point VALUE UNIT 300 K/W MAX. UNIT Ptot = 200 mW; Ts ≤ 80 °C CHARACTERISTICS VS = 5 V; IS = 24.4 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain RL IN return losses input RL OUT return losses output NF noise figure CONDITIONS MIN. TYP. 19 24.4 34 mA f = 1 GHz − 23.2 − dB f = 2 GHz − 23.2 − dB f = 1 GHz − 9 − dB f = 2 GHz − 7 − dB f = 1 GHz − 17 − dB f = 2 GHz − 9 − dB f = 1 GHz − 4.9 − dB f = 2 GHz − 5.3 − dB −3 dB below flat gain at 1 GHz − 2.8 − GHz s212 BW bandwidth at PL(sat) saturated load power f = 1 GHz − 10.5 − dBm f = 2 GHz − 8.1 − dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz − 7.2 − dBm at 1 dB gain compression; f = 2 GHz − 6 − dBm IP3(in) IP3(out) input intercept point output intercept point f = 1 GHz − −4.6 − dBm f = 2 GHz − −8.8 − dBm f = 1 GHz − 18.6 − dBm f = 2 GHz − 14.4 − dBm Rev. 04 – 29 August 2007 3 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2776 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. DC-block handbook, halfpage DC-block 100 pF 100 pF DC-block 100 pF input output MGU437 Fig.3 Simple cascade circuit. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. mixer handbook, halfpage from RF circuit to IF circuit or demodulator wideband amplifier MGU438 oscillator Fig.4 IF amplifier application. Vshalfpage handbook, C1 L1 Vs RF in RF input RF out C2 RF output C3 GND1 GND2 mixer handbook, halfpage MGU436 to IF circuit or demodulator antenna LNA wideband amplifier MGU439 oscillator Fig.2 Typical application circuit. Fig.5 RF amplifier application. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. from modulation or IF circuit The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). mixer handbook, halfpage to power amplifier wideband amplifier MGU440 oscillator Fig.6 Power amplifier driver application. Rev. 04 – 29 August 2007 4 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 100 MHz 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz −5 −0.2 −0.5 −2 −135° −45° −1 MGU449 1.0 −90° IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 3 GHz +0.2 0.6 100 MHz 0.4 +5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MGU450 1.0 −90° IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.8 Output reflection coefficient (s22); typical values. Rev. 04 – 29 August 2007 5 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 MGU451 0 12 (dB) 2 s21 (dBm) −20 20 −40 10 −60 MGU452 30 handbook, halfpage handbook, halfpage s 2 0 0 1000 2000 0 3000 1000 f (MHz) IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.9 IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Isolation (s122) as a function of frequency; typical values. MGU453 20 Fig.10 Insertion gain (s212) as a function of frequency; typical values. handbook, halfpage PL (dBm) PL (dBm) 10 10 0 0 −10 −10 −30 −20 −10 0 MGU454 20 handbook, halfpage −20 −40 3000 2000 f (MHz) −20 −40 −30 PD (dBm) −20 −10 0 PD (dBm) VS = 5 V; f = 1 GHz; ZO = 50 Ω. VS = 5 V; f = 2 GHz; ZO = 50 Ω. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. Rev. 04 – 29 August 2007 6 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 MGU455 10 MGU456 5 handbook, halfpage handbook, halfpage NF (dB) K 8 4 6 3 4 2 2 1 0 0 0 1000 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 IS = 23.8 mA; VS = 5 V; ZO = 50 Ω. IS = 23.8 mA; VS = 5 V; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Scattering parameters IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C. f (MHz) s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.24807 33.20 13.128 18.88 0.03393 18.97 0.33203 77.92 200 0.27028 15.23 13.939 1.305 0.02979 7.840 0.16144 92.47 400 0.28518 5.613 14.233 −16.20 0.02720 −3.208 0.04702 127.5 600 0.30074 1.998 14.370 −29.60 0.02573 −8.356 0.05168 −147.7 800 0.32672 0.099 14.418 −42.25 0.02434 −11.95 0.09810 −134.1 1000 0.35611 −1.702 14.566 −54.66 0.02310 −14.59 0.13562 −139.8 1200 0.38865 −4.465 14.683 −67.44 0.02189 −17.14 0.16792 −152.8 1400 0.41966 −7.778 14.828 −80.86 0.02100 −20.38 0.19808 −169.9 1600 0.44966 −12.12 14.911 −94.49 0.01929 −24.40 0.23691 171.6 1800 0.46509 −17.78 14.941 −109.4 0.01774 −29.44 0.28834 153.5 2000 0.45980 −24.85 14.688 −124.9 0.01494 −36.30 0.34770 137.6 2200 0.43684 −32.59 14.389 −140.7 0.01193 −41.31 0.40964 124.2 2400 0.38779 −40.66 13.533 −157.9 0.00828 −43.81 0.46607 113.1 2600 0.32424 −50.49 12.355 −174.5 0.00477 −48.94 0.51421 105.9 2800 0.25311 −57.33 11.049 169.3 0.00146 −17.41 0.56131 98.30 3000 0.18665 −65.52 9.2745 154.9 0.00279 94.00 0.59748 93.63 Rev. 04 – 29 August 2007 7 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 Rev. 04 – 29 August 2007 EUROPEAN PROJECTION ISSUE DATE 97-02-28 8 of 10 BGA2776 NXP Semiconductors MMIC wideband amplifier Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 – 29 August 2007 9 of 10 BGA2776 NXP Semiconductors MMIC wideband amplifier Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BGA2776_N_4 20070829 Product data sheet - BGA2776_3 Modifications: • amended marking code (Fig. 1) BGA2776_3 (9397 750 10016) 20020806 Product specification - BGA2776_2 BGA2776_2 (9397 750 08548) 20011019 Product specification - BGA2776_N_1 BGA2776_N_1 (9397 750 08193) 20010330 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 August 2007 Document identifier: BGA2776_N_4 Rev. 04 – 29 August 2007 10 of 10