PHILIPS BGA2776

BGA2776
MMIC wideband amplifier
Rev. 04 — 29 August 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
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[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
FEATURES
PINNING
• Internally matched
PIN
• Very wide frequency range
DESCRIPTION
1
• Very flat gain
• High gain
• High output power
• Unconditionally stable.
VS
2, 5
GND2
3
RF out
4
GND1
6
RF in
APPLICATIONS
6
• Cable systems
5
4
1
• LNB IF amplifiers
6
• General purpose
• ISM.
1
2
Top view
3
4
3
2, 5
MAM455
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Marking code: G5-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VS
DC supply voltage
CONDITIONS
TYP.
MAX.
UNIT
5
6
V
IS
DC supply current
24.4
−
mA
s212
insertion power gain
f = 1 GHz
23.2
−
dB
NF
noise figure
f = 1 GHz
4.9
−
dB
PL(sat)
saturated load power
f = 1 GHz
10.5
−
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Rev. 04 – 29 August 2007
2 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VS
DC supply voltage
IS
supply current
CONDITIONS
MIN.
RF input AC coupled
Ts ≤ 80 °C
MAX.
UNIT
−
6
V
−
34
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
PD
maximum drive power
−
10
dBm
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
solder point
VALUE
UNIT
300
K/W
MAX.
UNIT
Ptot = 200 mW; Ts ≤ 80 °C
CHARACTERISTICS
VS = 5 V; IS = 24.4 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IS
supply current
s212
insertion power gain
RL IN
return losses input
RL OUT
return losses output
NF
noise figure
CONDITIONS
MIN.
TYP.
19
24.4
34
mA
f = 1 GHz
−
23.2
−
dB
f = 2 GHz
−
23.2
−
dB
f = 1 GHz
−
9
−
dB
f = 2 GHz
−
7
−
dB
f = 1 GHz
−
17
−
dB
f = 2 GHz
−
9
−
dB
f = 1 GHz
−
4.9
−
dB
f = 2 GHz
−
5.3
−
dB
−3 dB below flat gain at 1 GHz −
2.8
−
GHz
s212
BW
bandwidth
at
PL(sat)
saturated load power
f = 1 GHz
−
10.5
−
dBm
f = 2 GHz
−
8.1
−
dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz
−
7.2
−
dBm
at 1 dB gain compression; f = 2 GHz
−
6
−
dBm
IP3(in)
IP3(out)
input intercept point
output intercept point
f = 1 GHz
−
−4.6
−
dBm
f = 2 GHz
−
−8.8
−
dBm
f = 1 GHz
−
18.6
−
dBm
f = 2 GHz
−
14.4
−
dBm
Rev. 04 – 29 August 2007
3 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2776 MMIC. The device is internally matched to 50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should be not more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
DC-block
handbook, halfpage
DC-block
100 pF
100 pF
DC-block
100 pF
input
output
MGU437
Fig.3 Simple cascade circuit.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
mixer
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
wideband
amplifier
MGU438
oscillator
Fig.4 IF amplifier application.
Vshalfpage
handbook,
C1
L1
Vs
RF in
RF input
RF out
C2
RF output
C3
GND1
GND2
mixer
handbook, halfpage
MGU436
to IF circuit
or demodulator
antenna
LNA
wideband
amplifier
MGU439
oscillator
Fig.2 Typical application circuit.
Fig.5 RF amplifier application.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
from modulation
or IF circuit
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
mixer
handbook, halfpage
to power
amplifier
wideband
amplifier
MGU440
oscillator
Fig.6 Power amplifier driver application.
Rev. 04 – 29 August 2007
4 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
100 MHz
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MGU449
1.0
−90°
IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.7 Input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
3 GHz
+0.2
0.6
100 MHz
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
−5
−0.2
−0.5
−2
−135°
−45°
−1
MGU450
1.0
−90°
IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.8 Output reflection coefficient (s22); typical values.
Rev. 04 – 29 August 2007
5 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
MGU451
0
12
(dB)
2
s21
(dBm)
−20
20
−40
10
−60
MGU452
30
handbook, halfpage
handbook, halfpage
s 2
0
0
1000
2000
0
3000
1000
f (MHz)
IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.9
IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Isolation (s122) as a function of frequency;
typical values.
MGU453
20
Fig.10 Insertion gain (s212) as a function of
frequency; typical values.
handbook, halfpage
PL
(dBm)
PL
(dBm)
10
10
0
0
−10
−10
−30
−20
−10
0
MGU454
20
handbook, halfpage
−20
−40
3000
2000
f (MHz)
−20
−40
−30
PD (dBm)
−20
−10
0
PD (dBm)
VS = 5 V; f = 1 GHz; ZO = 50 Ω.
VS = 5 V; f = 2 GHz; ZO = 50 Ω.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2 GHz; typical values.
Rev. 04 – 29 August 2007
6 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
MGU455
10
MGU456
5
handbook, halfpage
handbook, halfpage
NF
(dB)
K
8
4
6
3
4
2
2
1
0
0
0
1000
2000
f (MHz)
3000
0
1000
2000
f (MHz)
3000
IS = 23.8 mA; VS = 5 V; ZO = 50 Ω.
IS = 23.8 mA; VS = 5 V; ZO = 50 Ω.
Fig.13 Noise figure as a function of frequency;
typical values.
Fig.14 Stability factor as a function of frequency;
typical values.
Scattering parameters
IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C.
f
(MHz)
s21
s11
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.24807
33.20
13.128
18.88
0.03393
18.97
0.33203
77.92
200
0.27028
15.23
13.939
1.305
0.02979
7.840
0.16144
92.47
400
0.28518
5.613
14.233
−16.20
0.02720
−3.208
0.04702
127.5
600
0.30074
1.998
14.370
−29.60
0.02573
−8.356
0.05168
−147.7
800
0.32672
0.099
14.418
−42.25
0.02434
−11.95
0.09810
−134.1
1000
0.35611
−1.702
14.566
−54.66
0.02310
−14.59
0.13562
−139.8
1200
0.38865
−4.465
14.683
−67.44
0.02189
−17.14
0.16792
−152.8
1400
0.41966
−7.778
14.828
−80.86
0.02100
−20.38
0.19808
−169.9
1600
0.44966
−12.12
14.911
−94.49
0.01929
−24.40
0.23691
171.6
1800
0.46509
−17.78
14.941
−109.4
0.01774
−29.44
0.28834
153.5
2000
0.45980
−24.85
14.688
−124.9
0.01494
−36.30
0.34770
137.6
2200
0.43684
−32.59
14.389
−140.7
0.01193
−41.31
0.40964
124.2
2400
0.38779
−40.66
13.533
−157.9
0.00828
−43.81
0.46607
113.1
2600
0.32424
−50.49
12.355
−174.5
0.00477
−48.94
0.51421
105.9
2800
0.25311
−57.33
11.049
169.3
0.00146
−17.41
0.56131
98.30
3000
0.18665
−65.52
9.2745
154.9
0.00279
94.00
0.59748
93.63
Rev. 04 – 29 August 2007
7 of 10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2776
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
REFERENCES
IEC
JEDEC
EIAJ
SC-88
Rev. 04 – 29 August 2007
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
8 of 10
BGA2776
NXP Semiconductors
MMIC wideband amplifier
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 – 29 August 2007
9 of 10
BGA2776
NXP Semiconductors
MMIC wideband amplifier
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA2776_N_4
20070829
Product data sheet
-
BGA2776_3
Modifications:
•
amended marking code (Fig. 1)
BGA2776_3
(9397 750 10016)
20020806
Product specification
-
BGA2776_2
BGA2776_2
(9397 750 08548)
20011019
Product specification
-
BGA2776_N_1
BGA2776_N_1
(9397 750 08193)
20010330
Preliminary specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 August 2007
Document identifier: BGA2776_N_4
Rev. 04 – 29 August 2007
10 of 10