;6 21 BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Rev. 3 — 29 March 2016 Product data sheet 1. General description The BGS8L2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8L2 requires one external matching inductor. The BGS8L2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8L2 can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8L2 is optimized for 728 MHz to 960 MHz. 2. Features and benefits Operating frequency from 728 MHz to 960 MHz Noise figure = 0.85 dB Gain 13 dB High input 1 dB compression point of 1 dBm Bypass switch insertion loss of 1.9 dB IP3i of 1.5 dBm Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5.2 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Requires only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 3. Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules 4. Quick reference data Table 1. Quick reference data f = 882 MHz; VCC = 2.8 V; VI(CTRL) 0.8 V; Tamb = 25 C; input matched to 50 using a 8.2 nH inductor; unless otherwise specified. Symbol Parameter VCC supply voltage ICC supply current Conditions Min in gain mode power gain Max Unit 1.5 - 3.1 V - 5.2 - mA - - 1 A in gain mode [1] - 13.0 - dB in bypass mode [1] - 1.9 - dB [1][2] - 0.85 - dB in bypass mode Gp Typ NF noise figure Pi(1dB) input power at 1 dB gain compression [1] - 1.0 - dBm input third-order intercept point [1] - 1.5 - dBm IP3i [1] E-UTRA operating band 5 (869 MHz to 894 MHz). [2] PCB losses are subtracted. 5. Ordering information Table 2. Ordering information Type number Package Name Description Version BGS8L2 XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 0.7 0.37 mm SOT1232 OM17005 EVB BGS8L2 evaluation board - 6. Marking Table 3. Marking codes Type number Marking code BGS8L2 M BGS8L2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 7. Block diagram 9&& %*6/ &75/ %,$6&21752/ 5)B,1 5)B287 DDD Fig 1. Block diagram 8. Pinning information 8.1 Pinning *1'B5) 5)B287 5)B,1 9&& &75/ *1' 7UDQVSDUHQWWRSYLHZ DDD Fig 2. Pin configuration 8.2 Pin description Table 4. BGS8L2 Product data sheet Pinning Pin Symbol Description 1 GND ground 2 VCC supply voltage 3 RF_OUT RF out All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Table 4. Pinning …continued Pin Symbol Description 4 GND_RF ground RF 5 RF_IN RF in 6 CTRL gain control, switch between gain and bypass mode 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). See Section 18.3 “Disclaimers”, paragraph “Limiting values”. Symbol Parameter Conditions supply voltage VCC RF input AC coupled Min Max Unit [1] 0.5 5.0 V VI(CTRL) input voltage on pin CTRL VI(CTRL) < VCC + 0.6 V [1][2] 0.5 5.0 V VI(RF_IN) input voltage on pin RF_IN DC, VI(RF_IN) < VCC + 0.6 V [1][2] 0.5 5.0 V [1][2][3] 0.5 5.0 V - 26 dBm VI(RF_OUT) input voltage on pin RF_OUT DC, VI(RF_OUT) < VCC + 0.6 V [1] Pi input power Ptot total power dissipation - 55 mW Tstg storage temperature 65 150 C Tj junction temperature - 150 C VESD electrostatic discharge voltage Human Body Model (HBM) According to ANSI/ESDA/JEDEC standard JS-001 - 2 kV Charged Device Model (CDM) According to JEDEC standard JESD22-C101C - 1 kV [1] Tsp 130 C Stresses with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit. [2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V. [3] The RF input and RF output are AC coupled through internal DC blocking capacitors. 10. Recommended operating conditions Table 6. Operating conditions Symbol Parameter VCC supply voltage Tamb ambient temperature VI(CTRL) input voltage on pin CTRL Conditions Min Typ Max Unit 1.5 - 3.1 V 40 25 85 C OFF state - - 0.3 V ON state 0.8 - - V Typ Unit thermal resistance from junction to solder point 225 K/W 11. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Rth(j-sp) BGS8L2 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 12. Characteristics Table 8. Characteristics at VCC = 1.8 V 728 MHz f 960 MHz, VCC = 1.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 8.2 nH inductor. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 7.0 Gain mode ICC Gp RLin RLout ISL NF Pi(1dB) IP3i supply current power gain input return loss output return loss isolation noise figure input power at 1 dB gain compression input third-order intercept point 3.0 5.0 [1][5] 11.5 13.5 15.5 dB f = 882 MHz [2] 11.0 13.0 15.0 dB f = 943 MHz [3][5] f =740 MHz mA 10.5 12.5 14.5 dB f =740 MHz [1] - 7.5 - dB f = 882 MHz [2] - 12.0 - dB f = 943 MHz [3] - 13.0 - dB f =740 MHz [1] - 21.0 - dB f = 882 MHz [2] - 11.0 - dB f = 943 MHz [3] - 10.0 - dB f =740 MHz [1] - 23.0 - dB f = 882 MHz [2] - 22.0 - dB f = 943 MHz [3] - 21.5 - dB f =740 MHz [1][4][5] - 0.85 1.3 dB f = 882 MHz [2][4][5] - 0.85 1.3 dB f = 943 MHz [3][4][5] - 0.90 1.35 dB f =740 MHz [1][5] 10.5 7.5 - dBm f = 882 MHz [2][5] 10 6.0 - dBm f = 943 MHz [3][5] 9.5 5.5 - dBm f =740 MHz [1][5] 4.0 +1.0 - dBm f = 882 MHz [2][5] 4.0 +1.0 - dBm f = 943 MHz [3][5] 4.0 +1.0 - dBm 1 - K Rollett stability factor - ton turn-on time time from VI(CTRL) ON to 90 % of the gain - - 2.7 s toff turn-off time time from VI(CTRL) OFF to 10 % of the gain - - 0.6 s 1 A Bypass mode ICC Gp RLin RLout supply current power gain input return loss output return loss BGS8L2 Product data sheet VI(CTRL) < 0.3 V - - f =740 MHz [1][5] 3.1 1.6 0.1 dB f = 882 MHz [2][5] 3.5 2.0 0.5 dB f = 943 MHz [3][5] 3.5 2.0 0.5 dB f =740 MHz [1] - 14.5 - dB f = 882 MHz [2] - 11.5 - dB f = 943 MHz [3] - 10.5 - dB f =740 MHz [1] - 12.5 - dB f = 882 MHz [2] - 11.0 - dB f = 943 MHz [3] - 10.5 - dB All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 5 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Table 8. Characteristics at VCC = 1.8 V …continued 728 MHz f 960 MHz, VCC = 1.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 8.2 nH inductor. Unless otherwise specified. Symbol Parameter Conditions between gain mode and bypass mode phase variation Min f = 740 MHz f = 882 MHz [5] f = 943 MHz [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. Typ Max Unit - - - 5.0 - 5.0 deg - - - deg deg Table 9. Characteristics at VCC = 2.8 V 728 MHz f 960 MHz, VCC = 2.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 8.2 nH inductor. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 3.2 5.2 7.2 Gain mode ICC Gp RLin RLout ISL NF Pi(1dB) IP3i supply current power gain input return loss output return loss isolation noise figure input power at 1 dB gain compression input third-order intercept point f =740 MHz [1][5] f = 882 MHz [2] f = 943 MHz [3][5] mA 11.5 13.5 15.5 dB 11 13.0 15 dB 10.5 12.5 14.5 dB f =740 MHz [1] - 8.0 - dB f = 882 MHz [2] - 12.0 - dB f = 943 MHz [3] - 14.0 - dB f =740 MHz [1] - 21.0 - dB f = 882 MHz [2] - 12.5 - dB f = 943 MHz [3] - 10.5 - dB f =740 MHz [1] - 23.0 - dB f = 882 MHz [2] - 22.0 - dB f = 943 MHz [3] - 21.5 - dB f =740 MHz [1][4][5] - 0.85 1.3 dB f = 882 MHz [2][4][5] - 0.85 1.3 dB f = 943 MHz [3][4][5] - 0.85 1.3 dB f =740 MHz [1][5] 6.0 2.0 - dBm f = 882 MHz [2][5] 5.0 1.0 - dBm f = 943 MHz [3][5] 4.5 0.5 - dBm f =740 MHz [1][5] 3.5 +1.5 - dBm f = 882 MHz [2][5] 3.5 +1.5 - dBm f = 943 MHz [3][5] 3.5 +1.5 - dBm K Rollett stability factor 1 - - ton turn-on time time from VI(CTRL) ON, to 90 % of the gain - - 2.1 s toff turn-off time time from VI(CTRL) OFF, to 10 % of the gain - - 0.3 s BGS8L2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 6 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Table 9. Characteristics at VCC = 2.8 V …continued 728 MHz f 960 MHz, VCC = 2.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 8.2 nH inductor. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 1 Bypass mode ICC supply current VI(CTRL) < 0.3 V Gp power gain f =740 MHz RLin RLout input return loss output return loss phase variation 3.1 1.6 0.1 dB f = 882 MHz [2] 3.4 1.9 0.4 dB f = 943 MHz [3][5] 3.5 2.0 0.5 dB f =740 MHz [1] - 15.0 - dB f = 882 MHz [2] - 11.5 - dB f = 943 MHz [3] - 11.0 - dB f =740 MHz [1] - 13.0 - dB f = 882 MHz [2] - 11.5 - dB f = 943 MHz [3] - 11.5 - dB - - deg between gain mode and bypass mode f = 740 MHz f = 882 MHz f = 943 MHz [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. BGS8L2 Product data sheet A [1][5] All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 [5] - 5.0 - 5.0 deg - - - deg © NXP Semiconductors N.V. 2016. All rights reserved. 7 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 13. Application information 13.1 LTE LNA 9HQ 9FF 5)LQ & / ,& 5)RXW DDD For a list of component, see Table 10. Fig 3. Schematics LTE LNA evaluation board Table 10. List of components For schematics see, Figure 3. BGS8L2 Product data sheet Component Description Value Remarks C1 decoupling capacitor 1 F to suppress power supply noise IC1 BGS8L2 - NXP Semiconductors N.V. L1 high-quality matching inductor 8.2 nH Murata LQW15A All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 8 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 14. Package outline ;621SODVWLFH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGVWHUPLQDOVERG\[[PP î $ ' 627 H H ( Y H $ % Eî SLQ LQGH[DUHD SLQ LQGH[DUHD $ % \ Y $ % / î \ & $ & î PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ ' ( PLQ QRP PD[ H H E / 9 < < 1RWH 'LPHQVLRQ$LVLQFOXGLQJSODWLQJWKLFNQHVV 2XWOLQH YHUVLRQ VRWBSR 5HIHUHQFHV ,(& -('(& -(,7$ ,VVXHGDWH 627 Fig 4. (XURSHDQ SURMHFWLRQ Package outline SOT1232 (XSON6) BGS8L2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 9 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 15. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 16. Abbreviations Table 11. Abbreviations Acronym Description ESD ElectroStatic Discharge HBM Human Body Model LTE Long-Term Evolution MMIC Monolithic Microwave Integrated Circuit PCB Printed-Circuit Board SiGe:C Silicon Germanium Carbon 17. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGS8L2 v.3 20160329 Product data sheet - BGS8L2 v.2 Modifications: BGS8L2 v.2 Modifications: BGS8L2 v.1 BGS8L2 Product data sheet • • • Table 8 on page 5: added maximum value in Gp Table 9 on page 6: added minimum value in Pi(1dB) Table 9 on page 6: added maximum value in IP3i 20160316 • Product data sheet - BGS8L2 v.1 added phase variation Table 8 on page 5 and Table 9 on page 6 20151221 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 - © NXP Semiconductors N.V. 2016. All rights reserved. 10 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGS8L2 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 11 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGS8L2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 12 of 13 BGS8L2 NXP Semiconductors SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 20. Contents 1 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 13.1 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 LTE LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 March 2016 Document identifier: BGS8L2