T2525 IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 4.5V to 5.5V ● Highest sensitivity due to automatic sensitivity adaption (AGC) and automatic strong signal adaption (ATC) ● Highest immunity against disturbances from daylight and lamps ● Available for carrier frequencies between 30kHz to 56kHz; adjusted by zener diode fusing ● TTL and CMOS compatible ● Suitable minimum burst length ≥ 10 pulses/burst Applications ● Home entertainment applications (audio/video) ● Home appliances ● Remote control equipment 4657I-AUTO-04/14 1. Description The Atmel® IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrierfrequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44, 56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end remote control solutions (please refer to selection guide available for T2525/T2526). The T2525 operates in a supply voltage range of 4.5V to 5.5V. The function of T2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. Figure 1-1. Block Diagram VS IN Input CGA and filter OUT Demodulator AGC/ATC and digital control Oscillator Carrier frequency f0 T2525 Modulated IR signal min 6 or 10 pulses 2. Pin Description Table 2-1. Pin Description Symbol VS OUT IN GND 2 GND T2525 [DATASHEET] 4657I–AUTO–04/14 Function Supply voltage Data output Input PIN diode Ground Microcontroller 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Symbol Value Unit VS –0.3 to +6 V IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW 4. Electrical Characteristics Tamb = 25°C, VS = 5V unless otherwise specified. No. 1 Parameters 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions Symbol Min. IIN = 0 VS IS Internal pull-up resistor(1) Tamb = 25°C; see Figure 5-7 on page 7 RPU 2.2 Output voltage low IL = 2mA; see Figure 5-7 on page 7 VOL 2.3 Output voltage high 3 Max. Unit Type* 4.5 5 0.8 1.1 5.5 V C 1.4 mA B k A 250 mV B Vs V B mA B µA C –960 µA B –500 pA B Output 2.1 2.4 Typ. Supply Output current clamping VOH R2 = 0; see Figure 5-7 on page 7 IOCL 30/40 VS – 0.25 8 Input 3.1 Input DC current VIN = 0; see Figure 5-7 on page 7 IIN_DCMAX –85 3.2 Input DC current; Figure 5-2 on page 5 VIN = 0; Vs = 5V, Tamb = 25°C IIN_DCMAX –530 3.3 Test signal: see Figure 5-6 on page 7 VS = 5V, Tamb = 25°C, Minimum detection I = 1µA; threshold current; Figure IN_DC square pp, 5-1 on page 5 burst N = 16, f = f0; tPER = 10ms, Figure 5-6 on page 7; BER = 50(2) IEemin *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage T2525 [DATASHEET] 4657I–AUTO–04/14 3 4. Electrical Characteristics (Continued) Tamb = 25°C, VS = 5V unless otherwise specified. No. Parameters 3.4 Test signal: see Figure 5-6 on page 7 VS = 5V, Minimum detection T = 25°C, threshold current with AC amb IIN_DC = 1µA, current disturbance square pp, IIN_AC100 = 3µA at burst N = 16, 100Hz f = f0; tPER = 10ms, Figure 5-6 on page 7; BER = 50%(2) IEemin 3.5 Test signal: see Figure 5-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1µA; square pp, burst N = 16, f = f0; tPER = 10ms, Figure 5-6 on page 7; BER = 5%(2) IEemax 4 Maximum detection threshold current with VIN > 0V Test Conditions Symbol Min. Typ. Max. –750 –400 Unit Type* pA C µA D Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) GVARMIN –5 dB D 4.3 Total internal amplification(3) GMAX 71 dB D 4.4 Center frequency fusing accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 VS = 5V, Tamb = 25°C f0_FUSE –3 f0 +3 % A f0 –6.7 f0 +4.1 % C BPF bandwidth: type N0 - N3 –3 dB; f0 = 38kHz; see Figure 5-4 on page 6 B 3.5 kHz C BPF bandwidth: type N6, N7 –3 dB; f0 = 38kHz Figure 5-4 on page 6 B 5.4 kHz C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 4.1 ESD All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 4.2 Reliability Electrical qualification (1000h) in molded SO8 plastic package 4 T2525 [DATASHEET] 4657I–AUTO–04/14 Typical Electrical Curves at Tamb = 25°C Figure 5-1. IEemin versus IIN_DC, VS = 5V IEemin (nA) 100 10 0.96 1 0.52 0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 5-2. VIN versus IIN_DC, VS = 5V 3 2.94 2.79 2.44 VIN (V) 2 1 1.14 0 0.0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 5-3. Data Transmission Rate, VS = 5V 50 0 0 4000 Short burst type Bits/s 5. 3000 Standard type 2000 Lamp type 10 0 0 0 25 35 45 55 65 f0 (kHZ) T2525 [DATASHEET] 4657I–AUTO–04/14 5 Figure 5-4. Typical Bandpass Curve 1.1 Relative Amplitude 1.0 0.9 0.8 -3dB -3dB 0.7 0.6 0.5 Δf 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f0/f; f = -3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 Figure 5-5. Illustration of Used Terms 1066μs 533μs Period (P = 16) Burst (N = 16 pulses) IN 1 7 16 7 7 33μs OUT tDON tDOFF 533μs Envelope 1 Envelope 16 17056μs/data word OUT Telegram pause Data word Data word t 17ms TREP = 62ms Example: f = 30kHz, burst with 16 pulses, 26 periods Example: f = 30kHz, burst with 16 pulses, 16 periods 6 T2525 [DATASHEET] 4657I–AUTO–04/14 Figure 5-6. Test Circuit IEe = ΔU1/400kΩ VDD = 5V ΔU1 400kΩ 1nF R1 = 220Ω IIN_DC VS IIN 20kΩ IEe IN T2525 1nF VPULSE OUT GND ΔU2 C1 IIN_DC = ΔU2/40kΩ 20kΩ f0 + 4.7μF 16 - IIN_AC100 DC + t PER = 10ms Figure 5-7. Application Circuit (1) VDD = 5V optional R 2(1) > 2.4kΩ R 1 = 220Ω RPU IS VS IN IIN T2525 IOCL IL OUT Microcontroller GND + IIN_DC IEe C 1 = 4.7μF VIN VO C 2(1) = 470pF T2525 [DATASHEET] 4657I–AUTO–04/14 7 6. Chip Dimensions Figure 6-1. Chip Size in µm 1130,1030 GND IN 351,904 723,885 scribe length VS 63,660 63,70 T2525 Fusing OUT 0,0 width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: 8 Length inclusive scribe 1.15mm Width inclusive scribe 1.29mm Thickness 290µ ±5% Pads 90µ 90µ Fusing pads 70µ 70µ Material AlCu/AlSiTi(1) Thickness 0.8µm Material Si3N4/SiO2 Thickness 0.7/0.3µm Value depends on manufacture location. T2525 [DATASHEET] 4657I–AUTO–04/14 7. Ordering Information Delivering: unsawn wafers (DDW) in box. Extended Type Number PL(2) RPU(3) D(4) T2525S0xx(1)C-DDW 2 30 2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate T2525S1xx C-DDW 1 30 2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate T2525S2xx(1)C-DDW 2 40 1373 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525S3xx(1)C-DDW 1 40 1373 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525S6xx(1)C-DDW 2 30 3415 Short burst type: ≥ 6 pulses, enhanced data rate 1 30 3415 Short burst type: ≥ 6 pulses, enhanced data rate (1) (1) T2525S7xx C-DDW Notes: Type(5) 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz. 2. Two pad layout versions (see Figure 8-1 and Figure 8-2) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”) 4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 5-3 on page 5) 5. On request: noise type, data rate type 8. Pad Layout Figure 8-1. Pad Layout 1 GND IN OUT T2525 VS Fusing Figure 8-2. Pad Layout 2 (6) GND (5) IN (1) VS T2525 (3) OUT Fusing T2525 [DATASHEET] 4657I–AUTO–04/14 9 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4657I-AUTO-04/14 Put datasheet in the latest template Features on page 1 changed Section 1 “Description” on page 1 changed 4657H-AUTO-05/10 Section 2 “Pin Description” on page 3 changed Section 4 “Thermal Resistance” on page 3 deleted Section 4 “Electrical Characteristics” on pages 4 to 5 changed Figure 5-3 “Data Transmission Rate, VS = 5V” on page 6 changed 4657G-AUTO-09/09 Put datasheet in the latest template Ordering Information table changed Features on page 1 changed Applications on page 1 changed 4657F-AUTO-10/06 Section 1 “Description” on page 1 changed Section 5 “Electrical Characteristics” number 3.3 and 3.4 on page 4 Section 8 “Ordering Information” on page 10 changed Section 9 “Pad Layout” on page 10 changed 4657E-AUTO-04/06 10 T2525 [DATASHEET] 4657I–AUTO–04/14 Put datasheet in the latest template Section 8 “Ordering Information” on page 10 changed changed XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2014 Atmel Corporation. / Rev.: 4657I–AUTO–04/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. 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