Document Number: MMZ25332B4 Rev. 0, 12/2015 Freescale Semiconductor Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package which allows for maximum via hole pattern. The MMZ25332B4 offers exceptional reliability, ruggedness and ESD performance. Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC (mA) Test Signal 2140 MHz 21.7 26.5 –48 441 W--CDMA 2350 MHz 21.5 26.6 –48 446 LTE 2600 MHz 22.5 26.7 –48 453 LTE MMZ25332B4T1 1500–2700 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER QFN 4 4 Features Frequency: 1500–2700 MHz P1dB: 33 dBm @ 2500 MHz Power Gain: 26.5 dB @ 2500 MHz OIP3: 48 dBm @ 2500 MHz EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g) Active Bias Control (adjustable externally) Power Down Control via VBIAS Single 3 to 5 Volt Supply Single--ended Power Detector Cost--effective 24--Pin, 4 mm QFN Surface Mount Plastic Package VCC1 PDET VCC2/RFout VCC2/RFout RFin VCC2/RFout BIAS CIRCUIT VBA1 VBA2 VBIAS Figure 1. Functional Block Diagram Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ25332B4T1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 1200 mA RF Input Power Pin 30 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C Symbol Value (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 95C, VCC1 = VCC2 = VBIAS = 5 Vdc RJC Stage 1 Stage 2 Unit C/W 70 22 Table 3. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp Input Return Loss (S11) IRL 23.5 26 — dB — –13 — Output Return Loss (S22) dB ORL — –18 — dB Power Output @ 1dB Compression P1dB — 33 — dBm Intercept Point, Two--Tone CW OIP3 — 48 — dBm Supply Current ICQ 368 392 415 mA Supply Voltage VCC — 5 — V Table 4. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 5. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 6. Ordering Information Device MMZ25332B4T1 Tape and Reel Information Package T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel QFN 4 4 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. N.C. N.C. N.C. N.C. VCC1 PDET 24 23 22 21 20 19 N.C. 1 18 N.C. 2 17 N.C. 3 16 RFin 4 15 N.C. 5 14 N.C. N.C. 6 13 N.C. 7 8 9 10 11 N.C. VCC2/RFout VCC2/RFout VCC2/RFout 12 N.C. VBA1 VBA2 VBIAS N.C. N.C. (Top View) Note: Exposed backside of the package is DC and RF ground. N.C. can be connected to GND. Figure 2. Pin Connections MMZ25332B4T1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION VCC1 C8 24 23 PDET L1 C9 22 C10 C5 21 20 19 L2 1 18 2 17 3 16 4 15 VCC2 C12 RF INPUT C11 RF OUTPUT Z1 C1 C4 5 14 ACTIVE BIAS CIRCUIT 6 C2 C3 13 7 8 9 10 R1 11 12 R2 VBIAS C6 Z1 C7 0.074 0.02 Microstrip Figure 3. MMZ25332B4T1 Test Circuit Schematic Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2 pF Chip Capacitor 04023J2R0BBS AVX C3 1.8 pF Chip Capacitor 04023J1R8BBS AVX C5 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6, C9, C12 1000 pF Chip Capacitors GCM155R71E103KA37 Murata C7, C8 1 uF Chip Capacitors GRM155R61A105KE15 Murata C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 6.8 nH Chip Inductor 0603HC-6N8X Coilcraft R1 1200 , 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION VCC2 VDECT VCC1 C11 C8 C9 C10 C12 C5 RFIN L2 RFOUT L1 C4 C1 C2 C3 C6 C7 R1 R2 QFN 44--24D Rev. 0 VBIAS(1) MG3044 PCB actual size: 1.30 1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 4. MMZ25332B4T1 Test Circuit Component Layout Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2 pF Chip Capacitor 04023J2R0BBS AVX C3 1.8 pF Chip Capacitor 04023J1R8BBS AVX C5 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6, C9, C12 1000 pF Chip Capacitors GCM155R71E103KA37 Murata C7, C8 1 uF Chip Capacitors GRM155R61A105KE15 Murata C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 6.8 nH Chip Inductor 0603HC-6N8X Coilcraft R1 1200 , 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332B4T1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION 32 –8 30 –10 –40C –14 S21 (dB) S11 (dB) 28 –12 85C –16 –18 2400 25C 26 85C 24 –40C 25C 22 VCC1 = VCC2 = VBIAS = 5 Vdc 2480 2560 2640 2720 20 2400 2800 VCC1 = VCC2 = VBIAS = 5 Vdc 2480 2560 2640 2720 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 2800 –8 S22 (dB) –12 –16 –40C –20 85C –24 25C –28 2400 2480 2560 VCC1 = VCC2 = VBIAS = 5 Vdc 2640 2720 2800 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 5 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION 450 –33 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz –36 Single--Carrier W--CDMA 3GPP TM1 Unclipped –39 ICC, COLLECTOR CURRENT (mA) –45 –48 –51 –40C –57 85C –60 –63 10 32 30 25C 12 14 16 18 20 22 24 26 Gps, POWER GAIN (dB) 300 25C ICC2 85C ICC1 25C –40C 250 200 150 100 --40C 85C 12 14 16 18 22 20 24 26 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Output Power versus Temperature Figure 9. Stage Collector Current versus Output Power versus Temperature 2 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 28 25C 26 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 1.8 –40C 85C 24 22 20 10 350 50 10 PDET, POWER DETECTOR (V) ACPR (dBc) –42 –54 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 400 1.6 Minimum Temperature Variation 1.4 1.2 –40C 1 85C 0.8 25C 0.6 0.4 0.2 12 14 16 18 20 22 24 26 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 10. Power Gain versus Output Power versus Temperature Figure 11. Power Detector versus Output Power versus Temperature MMZ25332B4T1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC1 C8 24 23 PDET L1 C9 22 C6 C5 21 20 19 L2 1 18 2 17 3 16 4 15 VCC2 C10 RF INPUT C11 RF OUTPUT Z1 C1 C4 5 C2 14 ACTIVE BIAS CIRCUIT 6 C3 13 7 8 9 R1 10 11 12 R2 VBIAS C7 Z1 0.12 0.02 Microstrip Figure 12. MMZ25332B4T1 Test Circuit Schematic Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2.4 pF Chip Capacitor 04023J2R4BBS AVX C3 2.2 pF Chip Capacitor 04023J2R2BBS AVX C5 6.8 pF Chip Capacitor 04023J6R8BBS AVX C6 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C7, C8 1 F Chip Capacitors GRM155R61A105KE15 Murata C9, C10 1000 pF Chip Capacitors GCM155R71E102KA37 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 5.6 nH Chip Inductor LL1608-FSL5N6S Toko R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC2 VDECT VCC1 C11 C8 C9 C6 C10 C5 RFIN L2 RFOUT L1 C4 C1 C2 C3 C7 R1 R2 QFN 44--24D Rev. 0 VBIAS(1) MG3044 PCB actual size: 1.30 1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 13. MMZ25332B4T1 Test Circuit Component Layout Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2.4 pF Chip Capacitor 04023J2R4BBS AVX C3 2.2 pF Chip Capacitor 04023J2R2BBS AVX C5 6.8 pF Chip Capacitor 04023J6R8BBS AVX C6 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C7, C8 1 F Chip Capacitors GRM155R61A105KE15 Murata C9, C10 1000 pF Chip Capacitors GCM155R71E102KA37 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 5.6 nH Chip Inductor LL1608-FSL5N6S Toko R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332B4T1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION –12 29 –13 28 S21 (dB) S11 (dB) –14 –15 27 26 –16 25 –17 –18 1900 VCC1 = VCC2 = VBIAS = 5 Vdc VCC1 = VCC2 = VBIAS = 5 Vdc 2100 2000 2200 24 1900 2300 2000 2100 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 14. S11 versus Frequency Figure 15. S21 versus Frequency 2300 –8 –12 S22 (dB) –16 –20 –24 VCC1 = VCC2 = VBIAS = 5 Vdc –28 1900 2000 2100 2200 2300 f, FREQUENCY (MHz) Figure 16. S22 versus Frequency MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 9 –40 –42 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz –44 Single--Carrier W--CDMA 3GPP TM1 Unclipped –46 –48 –50 –52 –54 –56 –58 –60 –62 –64 –66 10 12 14 16 18 20 28 500 22 24 400 350 ICC2 300 250 200 150 ICC1 100 50 0 10 26 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 17. ACPR versus Output Power Figure 18. Stage Collector Current versus Output Power 26 2 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 1.8 PDET, POWER DETECTOR (V) 27 Gps, POWER GAIN (dB) VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 450 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION 26 25 24 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 23 10 12 14 16 18 20 22 24 26 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 19. Power Gain versus Output Power Figure 20. Power Detector versus Output Power MMZ25332B4T1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION VCC1 C8 24 23 PDET L1 C9 22 C6 C5 21 20 19 L2 1 18 2 17 3 16 4 15 VCC2 C10 RF INPUT C11 RF OUTPUT Z1 C1 C4 5 C2 14 ACTIVE BIAS CIRCUIT 6 C3 13 7 8 9 R1 10 11 12 R2 VBIAS C7 Z1 0.074 0.02 Microstrip Figure 21. MMZ25332B4T1 Test Circuit Schematic Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2.0 pF Chip Capacitor 04023J2R4BBS AVX C3 2.2 pF Chip Capacitor 04023J2R2BBS AVX C5 8.2 pF Chip Capacitor 04023J6R8BBS AVX C6 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C7, C8 1 F Chip Capacitors GRM155R61A105KE15 Murata C9, C10 1000 pF Chip Capacitors GCM155R71E102KA37 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 6.8 nH Chip Inductor LL1608-FSL5N6S Toko R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION VCC2 VDECT VCC1 C11 C8 C9 C6 C10 C5 RFIN L2 RFOUT L1 C4 C1 C2 C3 C7 R1 R2 QFN 44--24D Rev. 0 VBIAS(1) MG3044 PCB actual size: 1.30 1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 22. MMZ25332B4T1 Test Circuit Component Layout Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023J22R0BBS AVX C2 2.0 pF Chip Capacitor 04023J2R4BBS AVX C3 2.2 pF Chip Capacitor 04023J2R2BBS AVX C5 8.2 pF Chip Capacitor 04023J6R8BBS AVX C6 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C7, C8 1 F Chip Capacitors GRM155R61A105KE15 Murata C9, C10 1000 pF Chip Capacitors GCM155R71E102KA37 Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19 Murata L1 12 nH Chip Inductor 0603HC-12NX Coilcraft L2 6.8 nH Chip Inductor LL1608-FSL5N6S Toko R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB Rogers RO4350B, 0.010, r = 3.66 MG3044 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332B4T1 12 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION –12 29 –13 28 S21 (dB) S11 (dB) –14 –15 27 26 –16 25 –17 –18 2200 VCC1 = VCC2 = VBIAS = 5 Vdc VCC1 = VCC2 = VBIAS = 5 Vdc 2250 2300 2350 2400 2450 2500 24 2200 2250 2300 2350 2400 2450 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 23. S11 versus Frequency Figure 24. S21 versus Frequency 2500 –12 –16 S22 (dB) –20 –24 –28 VCC1 = VCC2 = VBIAS = 5 Vdc –32 2200 2300 2400 2500 f, FREQUENCY (MHz) Figure 25. S22 versus Frequency MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 13 50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION 500 –40 –42 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB –44 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) –46 –48 –50 –52 –54 –56 –58 –60 –62 10 12 14 16 18 20 22 ICC2 300 250 200 150 ICC1 100 50 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Figure 26. ACPR versus Output Power Figure 27. Stage Collector Current versus Output Power 24 1.6 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB 25 24 12 14 16 18 20 22 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB 1.4 PDET, POWER DETECTOR (V) Gps, POWER GAIN (dB) 350 Pout, OUTPUT POWER (dBm) 26 23 10 400 0 10 24 28 27 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB 450 24 1.2 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 28. Power Gain versus Output Power Figure 29. Power Detector versus Output Power MMZ25332B4T1 14 RF Device Data Freescale Semiconductor, Inc. 0.50 3.00 4.40 0.30 2.6 2.6 solder pad with thermal via structure. All dimensions in mm. Figure 30. PCB Pad Layout for 24--Lead QFN 4 4 MA11 WLYW Figure 31. Product Marking MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS MMZ25332B4T1 16 RF Device Data Freescale Semiconductor, Inc. MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 17 MMZ25332B4T1 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2015 Description Initial Release of Data Sheet MMZ25332B4T1 RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MMZ25332B4T1 Document Number: MMZ25332B4 Rev. 0, 12/2015 20 RF Device Data Freescale Semiconductor, Inc.