Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 2, 12/2014 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts. 400--1000 MHz, 31.7 dB 29.6 dBm InGaP HBT LINEAR AMPLIFIER Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) PAE (%) Test Signal 900 MHz 24 31.5 --50.0 26.0 IS--95 CDMA 900 MHz 18.0 31.5 --50.0 10.8 1C W--CDMA TM1 900 MHz 17.0 31.5 --50.0 9.0 10 MHz LTE TM1.1 750 MHz 17.5 32.0 --50.0 15.3 LTE 10/20 MHz 450 MHz 29 33.0 --40.0 57.0 ZigBee QFN 3 3 Features Frequency: 400--1000 MHz P1dB: 29.6 dBm @ 900 MHz Power Gain: 31.7 dB @ 900 MHz OIP3: 42 dBm @ 900 MHz Active Bias Control (adjustable externally) Single 3 to 5 V Supply Performs Well with Digital Predistortion Systems Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Characteristic Symbol 450 MHz 900 MHz Unit Small--Signal Gain (S21) Gp 33.8 31.7 dB Input Return Loss (S11) IRL --22 --15 dB Output Return Loss (S22) ORL --25 --18 dB Power Output @ 1dB Compression P1dB 28.8 29.6 dBm Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 14 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 84C, VCC1 = VCC2 = VBIAS = 5 Vdc Symbol Value (2) Unit RJC 56 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2011--2012, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ09312BT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 29 31.7 — dB Input Return Loss (S11) IRL — --15 — dB Output Return Loss (S22) ORL — --18 — dB Power Output @ 1dB Compression P1dB — 29.6 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 42 — dBm Noise Figure NF — 4 — dB Supply Current ICQ 69 74 83 mA Supply Voltage VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Meets 2000 V for all pins except: Pin 11 meets 400 V Pin 8 meets 200 V Class 0 Rating Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 VBA2 VBA1 VCC1 Rating Package Peak Temperature Unit 1 260 C GND BIAS CIRCUIT RFout VBIAS RFin RFout GND VBA2 VCC1 GND VCC2 GND 12 11 10 VBA1 1 9 VCC2 VBIAS 2 8 RFout RFin 3 7 RFout 4 5 6 GND GND PDET PDET Figure 1. Functional Block Diagram Figure 2. Pin Connections MMZ09312BT1 2 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 3. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 5.0 V Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 3 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 4. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 5.0 V Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 (Test Circuit Component Designations and Values table repeated for reference.) Isola MMZ09312BT1 4 RF Device Data Freescale Semiconductor, Inc. --6 40 --8 35 --10 30 --12 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V 85C --14 --40C --16 --20 700 820 880 940 85C 20 10 VCC1 = VCC2 = VBIAS = 5 Vdc 760 25C 15 25C --18 --40C 1000 5 700 VCC1 = VCC2 = VBIAS = 5 Vdc 760 820 880 940 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 1000 0 --5 S22 (dB) --10 --40C --15 25C --20 85C --25 --30 --35 700 VCC1 = VCC2 = VBIAS = 5 Vdc 760 820 880 940 1000 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V 300 --30 --42 270 180 --48 --40C ACPR --54 11 13 15 17 21 19 23 25 120 90 60 25C --57 --60 150 85C --40C --51 210 85C 25C --45 240 ICC 30 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz --33 Single--Carrier IS--95, 9 Channel Forward --36 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --39 0 27 Pout, OUTPUT POWER (dBm) 34 Gain 50 25C --40C 45 40 Gps, POWER GAIN (dB) 32 30 28 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz 26 Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 24 30 kHz Measurement Bandwidth 22 85C 10 25C 5 16 11 20 15 PAE 18 30 25 --40C 20 35 85C 13 15 17 19 21 23 25 PAE, POWER ADDED EFFICIENCY (%) 36 0 27 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 8. ACPR versus Collector Current versus Output Power versus Temperature 32 --40C 25C 30 85C 28 26 24 22 20 VCC1 = VCC2 = VBIAS = 5 Vdc 18 700 760 820 880 940 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 10. P1dB versus Frequency versus Temperature, CW 1000 PDET, POWER DETECTOR (V) 2 1.8 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 1.6 750 kHz Measurement Offset 1.4 30 kHz Measurement Bandwidth --40C 1.2 85C 1 0.8 25C 0.6 0.4 0.2 0 11 13 15 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Figure 11. Power Detector versus Output Power versus Temperature MMZ09312BT1 6 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 12. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 5.0 V Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 5.6 pF Chip Capacitor 04023J5R6BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 7 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 13. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 5.0 V Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 5.6 pF Chip Capacitor 04023J5R6BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 (Test Circuit Component Designations and Values table repeated for reference.) Isola MMZ09312BT1 8 RF Device Data Freescale Semiconductor, Inc. 0 40 --5 35 --10 30 --15 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V --20 15 --25 --30 --35 800 20 10 VCC1 = VCC2 = VBIAS = 5 Vdc 860 920 980 1040 1100 5 800 VCC1 = VCC2 = VBIAS = 5 Vdc 860 920 980 1040 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 14. S11 versus Frequency Figure 15. S21 versus Frequency 1100 0 --5 S22 (dB) --10 --15 --20 --25 --30 --35 800 VCC1 = VCC2 = VBIAS = 5 Vdc 860 920 980 1040 1100 f, FREQUENCY (MHz) Figure 16. S22 versus Frequency MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V 36 34 45 Gain Gps, POWER GAIN (dB) 32 30 40 35 VCC1 = VCC2 = VBIAS = 5 Vdc f = 900 MHz, W--CDMA 28 30 26 25 24 20 22 15 20 10 PAE 18 5 16 11 13 15 17 19 21 23 25 PAE, POWER ADDED EFFICIENCY (%) 50 0 27 Pout, OUTPUT POWER (dBm) Figure 17. Power Gain and Power Added Efficiency versus Output Power 2 --35 Vdet, POWER DETECTOR OUTPUT (V) --30 VCC1 = VCC2 = VBIAS = 5 Vdc f = 900 MHz ACPR (dBc) --40 --45 LTE 10 MHz --50 W--CDMA --55 --60 6 8 10 12 14 16 18 20 22 VCC1 = VCC2 = VBIAS = 5 Vdc f = 900 MHz 1.75 1.5 1.25 1 0.75 LTE 10 MHz W--CDMA 0.5 0.25 0 0 5 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 18. ACPR versus Output Power Figure 19. Power Detector Output versus Output Power 25 OPERATING CONDITIONS FOR FIGURES 17--19 W- CDMA Single--Carrier W--CDMA 3GPP TM1 CF = 9.31 dB, Channel Bandwidth = 3.84 MHz Adjacent Channel Bandwidth = 3.84 MHz Channel Offset = 5 MHz LTE 10 MHz LTE 10 MHz 3GPP TM1.1 CF = 11.70 dB, Channel Bandwidth = 9 MHz Adjacent Channel Bandwidth = 9 MHz Channel Offset = 10 MHz MMZ09312BT1 10 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 20. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 3.3 V Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 11 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 21. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 3.3 V Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ09312BT1 12 RF Device Data Freescale Semiconductor, Inc. 0 38 --4 34 --8 30 --12 --16 85C --24 --28 700 760 18 14 25C VCC1 = VCC2 = VBIAS = 3.3 Vdc 820 880 85C 25C 22 --40C --20 --40C 26 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V 940 10 700 1000 VCC1 = VCC2 = VBIAS = 3.3 Vdc 820 760 880 940 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 22. S11 versus Frequency versus Temperature Figure 23. S21 versus Frequency versus Temperature 1000 0 --4 --8 S22 (dB) 25C --12 --40C --16 --20 85C --24 --28 700 VCC1 = VCC2 = VBIAS = 3.3 Vdc 760 820 880 940 1000 f, FREQUENCY (MHz) Figure 24. S22 versus Frequency versus Temperature MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 13 TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V 400 0 360 320 280 240 --24 --30 --36 200 ICC 25C 85C --42 --48 --40C 10 12 14 16 120 25C ACPR 80 85C --54 --60 160 --40C 20 18 22 40 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz --6 Single--Carrier IS--95, 9 Channel Forward --12 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --18 0 26 24 Pout, OUTPUT POWER (dBm) --40C Gain 32 25C Gps, POWER GAIN (dB) 30 35 VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 24 750 kHz Measurement Offset 22 30 kHz Measurement Bandwidth 26 20 18 30 85C 25 20 25C --40C 15 10 PAE 16 5 14 10 45 40 85C 28 50 12 14 16 18 20 22 24 PAE, POWER ADDED EFFICIENCY (%) 34 0 26 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 25. ACPR versus Collector Current versus Output Power versus Temperature 30 28 --40C 25C 26 85C 24 22 20 18 VCC1 = VCC2 = VBIAS = 3.3 Vdc 16 700 760 820 880 940 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 26. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 27. P1dB versus Frequency versus Temperature, CW 1000 PDET, POWER DETECTOR (V) 3 2.7 VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 2.4 750 kHz Measurement Offset 2.1 30 kHz Measurement Bandwidth --40C 1.8 1.5 85C 1.2 0.9 0.6 25C 0.3 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 28. Power Detector versus Output Power versus Temperature MMZ09312BT1 14 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 29. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 3.3 V Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 15 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 30. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 3.3 V Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ09312BT1 16 RF Device Data Freescale Semiconductor, Inc. 0 40 --5 35 --10 30 --15 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V --20 15 --25 --30 --35 800 20 10 VCC1 = VCC2 = VBIAS = 3.3 Vdc 860 920 980 1040 1100 5 800 VCC1 = VCC2 = VBIAS = 3.3 Vdc 860 920 980 1040 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 31. S11 versus Frequency Figure 32. S21 versus Frequency 1100 0 --5 S22 (dB) --10 --15 --20 --25 --30 --35 800 VCC1 = VCC2 = VBIAS = 3.3 Vdc 860 920 980 1040 1100 f, FREQUENCY (MHz) Figure 33. S22 versus Frequency MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 17 TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V 36 34 Gps, POWER GAIN (dB) 22.5 Gain 32 30 20 17.5 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 900 MHz, W--CDMA 28 15 26 12.5 24 10 22 7.5 20 5 PAE 18 2.5 16 6 8 10 12 14 16 18 20 PAE, POWER ADDED EFFICIENCY (%) 25 0 22 Pout, OUTPUT POWER (dBm) Figure 34. Power Gain and Power Added Efficiency versus Output Power 2 --35 Vdet, POWER DETECTOR OUTPUT (V) --30 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 900 MHz ACPR (dBc) --40 --45 LTE 10 MHz --50 W--CDMA --55 --60 6 8 10 12 14 16 18 20 22 1.75 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 900 MHz 1.5 1.25 1 LTE 10 MHz 0.75 W--CDMA 0.5 0.25 0 0 5 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 35. ACPR versus Output Power Figure 36. Power Detector Output versus Output Power 25 OPERATING CONDITIONS FOR FIGURES 34--36 W- CDMA Single--Carrier W--CDMA 3GPP TM1 CF = 9.31 dB, Channel Bandwidth = 3.84 MHz Adjacent Channel Bandwidth = 3.84 MHz Channel Offset = 5 MHz LTE 10 MHz LTE 10 MHz 3GPP TM1.1 CF = 11.70 dB, Channel Bandwidth = 9 MHz Adjacent Channel Bandwidth = 9 MHz Channel Offset = 10 MHz MMZ09312BT1 18 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 37. MMZ09312B Test Circuit Schematic — ZigBee, 450 MHz, 5.0 V Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 19 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 38. MMZ09312B Test Circuit Component Layout — ZigBee, 450 MHz, 5.0 V Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ09312BT1 20 RF Device Data Freescale Semiconductor, Inc. --5 40 --10 35 --15 30 --20 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V --25 --30 15 --35 --40 400 20 10 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 700 5 400 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 39. S11 versus Frequency Figure 40. S21 versus Frequency 700 0 --5 S22 (dB) --10 --15 --20 --25 --30 --35 400 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 700 f, FREQUENCY (MHz) Figure 41. S22 versus Frequency MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 21 50 45 Gain Gps, POWER GAIN (dB) 34 40 35 32 VCC1 = VCC2 = VBIAS = 5 Vdc f = 450 MHz 30 28 30 25 26 20 24 15 PAE 22 10 20 5 18 0 29 15 17 19 21 23 25 27 P1dB, 1 dB COMPRESSION POINT, CW (dBm) 38 36 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V 32 30 28 26 24 22 20 VCC1 = VCC2 = VBIAS = 5 Vdc 18 400 440 480 520 560 600 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 42. Power Gain versus Power Added Efficiency versus Output Power, CW Figure 43. P1dB versus Frequency, CW 640 4 PDET, POWER DETECTOR (V) 3.6 3.2 VCC1 = VCC2 = VBIAS = 5 Vdc f = 450 MHz 2.8 2.4 2 1.6 1.2 0.8 0.4 0 15 17 19 21 23 25 27 29 Pout, OUTPUT POWER (dBm) Figure 44. Power Detector versus Output Power, CW MMZ09312BT1 22 RF Device Data Freescale Semiconductor, Inc. 3.00 0.70 0.30 2.00 3.40 0.50 1.6 1.6 solder pad with thermal via structure. All dimensions in mm. Figure 45. PCB Pad Layout for QFN 3 3 MA03 WLYW Figure 46. Product Marking MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 23 PACKAGE DIMENSIONS MMZ09312BT1 24 RF Device Data Freescale Semiconductor, Inc. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 25 MMZ09312BT1 26 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2011 Initial Release of Data Sheet 1 Feb. 2012 Typical Performance table: changed Pout at 750 MHz from 19.5 to 17.5 dBm to reflect recent performance measurements, p. 1 Figs. 3, 12 and 21, MMZ09312B Test Circuit Schematic: corrected L1 inductor label in test circuit schematics, pp. 3, 7 and 11 2 Dec. 2014 Typical Performance table: added 900 MHz, 1C W--CDMA TM1 and 900 MHz, 10 MHz LTE TM1.1, p. 1 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Added application circuit for UMTS/LTE, 900 MHz, 5.0 V as follows: schematic, component designations and values, component layout, and typical characteristic performance graphs, pp. 7--10 Added application circuit for UMTS/LTE, 900 MHz, 3.3 V as follows: schematic, component designations and values, component layout, and typical characteristic performance graphs, pp. 15--18 Fig. 46, Product Marking: updated date code line to reflect improved traceability information, p. 23 Added Failure Analysis information, p. 27 MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 27 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2011--2012, 2014 Freescale Semiconductor, Inc. MMZ09312BT1 Document Number: MMZ09312B Rev. 2, 12/2014 28 RF Device Data Freescale Semiconductor, Inc.