Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package. • Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) PAE (%) Test Signal 900 MHz 24 31.5 --50.0 26.0 IS--95 CDMA 750 MHz 17.5 32.0 --50.0 15.3 LTE 10/20 MHz 450 MHz 29 33.0 --40.0 57.0 400--1000 MHz, 31.7 dB 29.6 dBm InGaP HBT CASE 2131--01 QFN 3x3 PLASTIC ZigBee Features • Frequency: 400--1000 MHz • P1dB: 29.6 dBm @ 900 MHz • Power Gain: 31.7 dB @ 900 MHz • OIP3: 42 dBm @ 900 MHz • Active Bias Control (adjustable externally) • Single 3 to 5 Volt Supply • Performs Well with Digital Predistortion Systems • Single--ended Power Detector • Cost--effective QFN Surface Mount Package • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Characteristic Symbol 450 MHz 900 MHz Unit Small--Signal Gain (S21) Gp 33.8 31.7 dB Input Return Loss (S11) IRL --22 --15 dB Output Return Loss (S22) ORL --25 --18 dB Power Output @ 1dB Compression P1dB 28.8 29.6 dBm 1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW Application Circuit Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 14 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 84°C, VCC1 = VCC2 = VBIAS = 5 Vdc Symbol Value (3) Unit RθJC 56 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011--2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ09312BT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 29 31.7 — dB Input Return Loss (S11) IRL — --15 — dB Output Return Loss (S22) ORL — --18 — dB Power Output @ 1dB Compression P1dB — 29.6 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 42 — dBm Noise Figure NF — 4 — dB Supply Current (1) ICQ 69 74 83 mA Supply Voltage (1) VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Meets 2000 V for all pins except: Pin 11 meets 400 V Pin 8 meets 200 V Class 0 Rating Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 °C Per JESD22--A113, IPC/JEDEC J--STD--020 1. For reliable operation, the junction temperature should not exceed 150°C. VBA2 VBA1 VCC1 GND BIAS CIRCUIT RFout VBIAS RFin RFout GND VBA2 VCC1 GND VCC2 GND 12 11 10 VBA1 1 9 VCC2 VBIAS 2 8 RFout RFin 3 7 RFout 4 5 6 GND GND PDET PDET Figure 1. Functional Block Diagram Figure 2. Pin Connections MMZ09312BT1 2 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 3. MMZ09312B Test Circuit Schematic — 900 MHz, 5 Volt Operation Table 7. MMZ09312B Test Circuit Component Designations and Values — 900 MHz, 5 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 Ω, 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 kΩ, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 3 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 4. MMZ09312B Test Circuit Component Layout — 900 MHz, 5 Volt Operation Table 7. MMZ09312B Test Circuit Component Designations and Values — 900 MHz, 5 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 330 Ω, 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 kΩ, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 (Test Circuit Component Designations and Values table repeated for reference.) Isola MMZ09312BT1 4 RF Device Data Freescale Semiconductor, Inc. --6 40 --8 35 --10 30 --12 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — 900 MHz, 5 VOLT OPERATION 85°C --14 --40°C --16 --20 700 820 880 940 85°C 20 10 VCC1 = VCC2 = VBIAS = 5 Vdc 760 25°C 15 25°C --18 --40°C 1000 5 700 VCC1 = VCC2 = VBIAS = 5 Vdc 760 820 880 940 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 1000 0 --5 S22 (dB) --10 --40°C --15 25°C --20 85°C --25 --30 --35 700 VCC1 = VCC2 = VBIAS = 5 Vdc 760 820 880 940 1000 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 900 MHz, 5 VOLT OPERATION 300 --30 --42 270 180 --48 --40°C ACPR --54 11 13 15 17 21 19 23 25 120 90 60 25°C --57 --60 150 85°C --40°C --51 210 85°C 25°C --45 240 ICC 30 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz --33 Single--Carrier IS--95, 9 Channel Forward --36 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --39 0 27 Pout, OUTPUT POWER (dBm) 34 Gain 50 25°C --40°C 45 40 Gps, POWER GAIN (dB) 32 30 28 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz 26 Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 24 30 kHz Measurement Bandwidth 22 85°C 10 25°C 5 16 11 20 15 PAE 18 30 25 --40°C 20 35 85°C 13 15 17 19 21 23 25 PAE, POWER ADDED EFFICIENCY (%) 36 0 27 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 8. ACPR versus Collector Current versus Output Power versus Temperature 32 --40°C 25°C 30 85°C 28 26 24 22 20 VCC1 = VCC2 = VBIAS = 5 Vdc 18 700 760 820 880 940 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 10. P1dB versus Frequency versus Temperature, CW 1000 PDET, POWER DETECTOR (V) 2 1.8 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 1.6 750 kHz Measurement Offset 1.4 30 kHz Measurement Bandwidth --40°C 1.2 85°C 1 0.8 25°C 0.6 0.4 0.2 0 11 13 15 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Figure 11. Power Detector versus Output Power versus Temperature MMZ09312BT1 6 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 12. MMZ09312B Test Circuit Schematic — 900 MHz, 3.3 Volt Operation Table 8. MMZ09312B Test Circuit Component Designations and Values — 900 MHz, 3.3 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 Ω, 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 Ω, 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 7 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 13. MMZ09312B Test Circuit Component Layout — 900 MHz, 3.3 Volt Operation Table 8. MMZ09312B Test Circuit Component Designations and Values — 900 MHz, 3.3 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft R1 82 Ω, 1/16 W Chip Resistor RC0402JR--07820RL Yageo R2 470 Ω, 1/16 W Chip Resistor RC0402JR--07471RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ09312BT1 8 RF Device Data Freescale Semiconductor, Inc. 0 38 --4 34 --8 30 --12 --16 85°C --24 --28 700 760 18 14 25°C VCC1 = VCC2 = VBIAS = 3.3 Vdc 820 880 85°C 25°C 22 --40°C --20 --40°C 26 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — 900 MHz, 3.3 VOLT OPERATION 940 10 700 1000 VCC1 = VCC2 = VBIAS = 3.3 Vdc 820 760 880 940 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 14. S11 versus Frequency versus Temperature Figure 15. S21 versus Frequency versus Temperature 1000 0 --4 --8 S22 (dB) 25°C --12 --40°C --16 --20 85°C --24 --28 700 VCC1 = VCC2 = VBIAS = 3.3 Vdc 760 820 880 940 1000 f, FREQUENCY (MHz) Figure 16. S22 versus Frequency versus Temperature MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS — 900 MHz, 3.3 VOLT OPERATION 400 0 360 320 280 240 --24 --30 --36 200 ICC 25°C 85°C --42 --48 --40°C 10 12 14 16 120 25°C ACPR 80 85°C --54 --60 160 --40°C 20 18 22 40 ICC, COLLECTOR CURRENT (mA) ACPR (dBc) VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz --6 Single--Carrier IS--95, 9 Channel Forward --12 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --18 0 26 24 Pout, OUTPUT POWER (dBm) --40°C Gain 32 25°C Gps, POWER GAIN (dB) 30 35 VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 24 750 kHz Measurement Offset 22 30 kHz Measurement Bandwidth 26 20 18 30 85°C 25 20 25°C --40°C 15 10 PAE 16 5 14 10 45 40 85°C 28 50 12 14 16 18 20 22 24 PAE, POWER ADDED EFFICIENCY (%) 34 0 26 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 17. ACPR versus Collector Current versus Output Power versus Temperature 30 28 --40°C 25°C 26 85°C 24 22 20 18 VCC1 = VCC2 = VBIAS = 3.3 Vdc 16 700 760 820 880 940 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 18. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 19. P1dB versus Frequency versus Temperature, CW 1000 PDET, POWER DETECTOR (V) 3 2.7 VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 2.4 750 kHz Measurement Offset 2.1 30 kHz Measurement Bandwidth --40°C 1.8 1.5 85°C 1.2 0.9 0.6 25°C 0.3 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 20. Power Detector versus Output Power versus Temperature MMZ09312BT1 10 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L4 C1 R2 R1 12 1 C2 11 VCC2 C3 10 L3 9 BIAS CIRCUIT C10 RF OUTPUT C5 8 2 L5 C11 RF INPUT L2 7 3 L1 4 5 6 PDET C4 Figure 21. MMZ09312B Test Circuit Schematic — 450 MHz, 5 Volt Operation Table 9. MMZ09312B Test Circuit Component Designations and Values — 450 MHz, 5 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft R1 330 Ω, 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 kΩ, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 11 VCC2 VCC1 VBIAS(1) C1 C2 R3* C3 L4 R2 C9* R1 RFIN L3 C8* RFOUT C6* C10 C5 L5 L1 L2 C11 C7* C4 QFN 3x3--12M Rev. 1 PDET (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 22. MMZ09312B Test Circuit Component Layout — 450 MHz, 5 Volt Operation Table 9. MMZ09312B Test Circuit Component Designations and Values — 450 MHz, 5 Volt Operation Part Description Part Number Manufacturer C1, C2 1 μF Chip Capacitors GRM155R61A105KE15 Murata C3 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C6, C7, C8, C9 Components Not Placed C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft R1 330 Ω, 1/16 W Chip Resistor RC0402JR--07331RL Yageo R2 1.5 kΩ, 1/16 W Chip Resistor RC0402JR--07152RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ09312BT1 12 RF Device Data Freescale Semiconductor, Inc. --5 40 --10 35 --15 30 --20 25 S21 (dB) S11 (dB) TYPICAL CHARACTERISTICS — 450 MHz, 5 VOLT OPERATION --25 --30 15 --35 --40 400 20 10 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 700 5 400 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 23. S11 versus Frequency Figure 24. S21 versus Frequency 700 0 --5 S22 (dB) --10 --15 --20 --25 --30 --35 400 VCC1 = VCC2 = VBIAS = 5 Vdc 460 520 580 640 700 f, FREQUENCY (MHz) Figure 25. S22 versus Frequency MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 13 50 45 Gain Gps, POWER GAIN (dB) 34 40 35 32 VCC1 = VCC2 = VBIAS = 5 Vdc f = 450 MHz 30 28 30 25 26 20 24 15 PAE 22 10 20 5 18 0 29 15 17 19 21 23 25 27 P1dB, 1 dB COMPRESSION POINT, CW (dBm) 38 36 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 450 MHz, 5 VOLT OPERATION 32 30 28 26 24 22 20 VCC1 = VCC2 = VBIAS = 5 Vdc 18 400 440 480 520 560 600 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 26. Power Gain versus Power Added Efficiency versus Output Power, CW Figure 27. P1dB versus Frequency, CW 640 4 PDET, POWER DETECTOR (V) 3.6 3.2 VCC1 = VCC2 = VBIAS = 5 Vdc f = 450 MHz 2.8 2.4 2 1.6 1.2 0.8 0.4 0 15 17 19 21 23 25 27 29 Pout, OUTPUT POWER (dBm) Figure 28. Power Detector versus Output Power, CW MMZ09312BT1 14 RF Device Data Freescale Semiconductor, Inc. 3.00 0.70 0.30 2.00 3.40 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure Figure 29. PCB Pad Layout for QFN 3x3 MA03 YWZ Figure 30. Product Marking MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS MMZ09312BT1 16 RF Device Data Freescale Semiconductor, Inc. MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 17 MMZ09312BT1 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2011 • Initial Release of Data Sheet 1 Feb. 2012 • Typical Performance table: changed Pout at 750 MHz from 19.5 to 17.5 dBm to reflect recent performance measurements, p. 1 • Figs. 3, 12 and 21, MMZ09312B Test Circuit Schematic: corrected L1 inductor label in test circuit schematics, p. 3, 7 and 11 MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011--2012. All rights reserved. MMZ09312BT1 Document Number: MMZ09312B Rev. 1, 2/2012 20 RF Device Data Freescale Semiconductor, Inc.