Freescale Semiconductor Technical Data Document Number: MMZ27333B Rev. 0, 1/2016 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 4 surface mount package. MMZ27333BT1 1500–2700 MHz, 35 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 430 mA. Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC Total 2140 MHz 22.3 35.8 –48.0 499 W--CDMA 2600 MHz 21.3 36.1 –48.0 498 LTE 20 MHz RFin2 VCC2 Test Signal QFN 4 4 Features P1dB: up to 33 dBm Gain: More than 35 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable VCC1/ RFout1 PDET VCC3/RFout3 RFin1 VCC3/RFout3 VCC3/RFout3 BIAS CIRCUIT VBA1 VBA2 VBIAS Figure 1. Functional Block Diagram Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ27333BT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit VCC 6 V ICC 68 240 960 mA RF Input Power Pin 10 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C Symbol Value (1) Supply Voltage Supply Current ICC1 ICC2 ICC3 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 95C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc RJC Stage 1 Stage 2 Stage 3 Unit C/W 75 79 21 Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale PA Driver Application Circuit tuned for LTE application) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 34.8 35.8 — dB Input Return Loss (S11) IRL — 17 — dB Output Return Loss (S22) ORL — 13.3 — dB Power Output @ 1dB Compression P1dB — 32.2 — dBm Total Supply Current (ICC1 + ICC2 + ICC3 + IBIAS) ICQ 420 430 445 mA Supply Voltage VCC — 5 — V Characteristic MMZ27333BT1 2 RF Device Data Freescale Semiconductor, Inc. Table 4. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 5. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. VCC1/ RFout1 N.C. RFin2 N.C. VCC2 PDET 24 23 22 21 20 19 N.C. 1 18 N.C. 2 17 VCC3/RFout3 N.C. 3 RFin1 4 GND N.C. 16 VCC3/RFout3 15 VCC3/RFout3 N.C. 5 14 N.C. N.C. 6 13 N.C. 7 8 9 10 11 12 N.C. VBA1 VBA2 VBIAS N.C. N.C. (Top View) Note: Exposed backside of the package is DC and RF ground. N.C. can be connected to GND. Figure 2. Pin Connections MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION VCC1 VCC2 L2 R3 C11 L1 L4 24 C1 C10 Z3 C7 RFIN C9 C13 C14 C12 PDET C8 23 22 21 20 19 1 18 2 17 3 16 4 15 5 6 13 8 9 R1 10 11 12 VCC3 C15 C16 C4 Z2 Z1 C2 14 ACTIVE BIAS CIRCUIT 7 L3 RFOUT C3 Z1: 0.066” 0.022” Microstrip Z2: 0.128” 0.022” Microstrip Z3: 0.058” 0.022” Microstrip R2 VBIAS C6 C5 Figure 3. MMZ27333BT1 Test Circuit Schematic Table 6. MMZ27333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023K220BBS AVX C2 2.0 pF Chip Capacitor 04023J2R0BBS AVX C3 1.8 pF Chip Capacitor 04023J1R8BBS AVX C5, C11, C13, C15 1000 pF Chip Capacitors GCM155R71E103KA37D Murata C6, C14 1 F Chip Capacitors GRM188R61A105KA61D Murata C7 1.5 pF Chip Capacitor GRM1555C1H1R5BA91D Murata C8 0.8 pF Chip Capacitor GRM1555C1HR80BA01D Murata C9 7.5 pF Chip Capacitor 04023J7R5BBS AVX C10 470 pF Chip Capacitor GRM1555C1H471JA01D Murata C12 0.01 F Chip Capacitor C0603C103J5RACTU Kemet C16 4.7 F Chip Capacitor GRM188R60J475KE19D Murata L1 56 nH Chip Inductor 0603CS--56NXJL Coilcraft L2 10 nH Chip Inductor 0603HC-10NXLLW Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8XJLW Coilcraft L4 1.8 nH Chip Inductor LL1005-FHL1N85 TOKO R1 1.2 k Chip Resistor RC0402FR-071K20L Yageo R2 330 , 1/16 W Chip Resistor CRCW0402330RFKED Vishay R3 0 1 A Chip Resistor ERJ2GEY0R00V Panasonic PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ27333BT1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION VCC3 VDECT VCC2 VCC1 C14 C13 R3 C12 C11 RFIN L2 L1 C10 C16 C15 L3 C9 C7 C2 C5 C1 L4 C6 R1 R2 C3 C4 M70506 VBIAS QFN 44--24E Rev. 1 RFOUT C8 PCB actual size: 1.30 1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 4. MMZ27333BT1 Test Circuit Component Layout Table 6. MMZ27333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4 22 pF Chip Capacitors 04023K220BBS AVX C2 2.0 pF Chip Capacitor 04023J2R0BBS AVX C3 1.8 pF Chip Capacitor 04023J1R8BBS AVX C5, C11, C13, C15 1000 pF Chip Capacitors GCM155R71E103KA37D Murata C6, C14 1 F Chip Capacitors GRM188R61A105KA61D Murata C7 1.5 pF Chip Capacitor GRM1555C1H1R5BA91D Murata C8 0.8 pF Chip Capacitor GRM1555C1HR80BA01D Murata C9 7.5 pF Chip Capacitor 04023J7R5BBS AVX C10 470 pF Chip Capacitor GRM1555C1H471JA01D Murata C12 0.01 F Chip Capacitor C0603C103J5RACTU Kemet C16 4.7 F Chip Capacitor GRM188R60J475KE19D Murata L1 56 nH Chip Inductor 0603CS--56NXJL Coilcraft L2 10 nH Chip Inductor 0603HC-10NXLLW Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8XJLW Coilcraft L4 1.8 nH Chip Inductor LL1005-FHL1N85 TOKO R1 1.2 k Chip Resistor RC0402FR-071K20L Yageo R2 330 , 1/16 W Chip Resistor CRCW0402330RFKED Vishay R3 0 1 A Chip Resistor ERJ2GEY0R00V Panasonic PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 5 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION –10 40 –12 –14 –18 S21 (dB) –16 S11 (dB) 38 –40C 85C –20 –22 25C –24 –26 36 25C 34 85C 32 –28 –30 2400 –40C VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc 2480 2560 2640 2720 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc 30 2400 2800 2480 2560 2640 2720 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 2800 –4 –6 –40C S22 (dB) –8 –10 25C 85C –12 –14 –16 –18 2400 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc 2480 2560 2640 2720 2800 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMZ27333BT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION 500 –33 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz –36 LTE --20 MHz 3GPP TM1 Signal –39 ICC, COLLECTOR CURRENT (mA) –45 –40C –51 85C –54 –57 25C –60 –63 10 40 Gps, POWER GAIN (dB) 38 12 14 16 18 20 22 24 –40C 350 ICC3 300 85C 25C 250 200 150 100 50 25C ICC2 --40C ICC1 85C --40C 25C 85C 12 14 16 18 22 20 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Output Power versus Temperature Figure 9. Stage Collector Current versus Output Power versus Temperature 25C 85C 34 26 2.8 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz LTE --20 MHz 3GPP TM1 Signal –40C 36 32 30 10 400 0 10 26 PDET, POWER DETECTOR (V) ACPR (dBc) –42 –48 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz LTE --20 MHz 3GPP TM1 Signal 450 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz LTE --20 MHz 3GPP TM1 Signal 2.4 2 –40C 1.6 25C 1.2 85C 0.8 0.4 12 14 16 18 20 22 24 26 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 10. Power Gain versus Output Power versus Temperature Figure 11. Power Detector versus Output Power versus Temperature MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC2 VCC1 L2 R3 C9 C10 C12 C11 L1 PDET C7 C8 Z2 C6 24 RFIN C1 23 22 21 20 19 1 18 2 17 3 16 4 15 5 14 ACTIVE BIAS CIRCUIT 6 L3 VCC3 C13 C14 C3 Z1 RFOUT C2 13 7 8 9 R1 10 11 12 Z1: 0.163” 0.022” Microstrip Z2: 0.028” 0.022” Microstrip R2 VBIAS C5 C4 Figure 12. MMZ27333BT1 Test Circuit Schematic Table 7. MMZ27333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3 22 pF Chip Capacitors 04023K220BBS AVX C2 3.6 pF Chip Capacitor 04023J3R6BBS AVX C4, C9, C11, C13 1000 pF Chip Capacitors GCM155R71E103KA37D Murata C5, C12 1 F Chip Capacitors GRM188R61A105KA61D Murata C6 22 pF Chip Capacitor GRM155C1H220GA01D Murata C7 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8 470 pF Chip Capacitor GRM1555C1H471JA01D Murata C10 0.01 F Chip Capacitor C0603C103J5RACTU Kemet C14 4.7 F Chip Capacitor GRM188R60J475KE19D Murata L1 56 nH Chip Inductor 0603CS-56NXJL Coilcraft L2 12 nH Chip Inductor 0603HC-12NXGLW Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8XJLW Coilcraft R1 1.2 k Chip Resistor RC0402FR-071K20L Yageo R2 330 1/16 W Chip Resistor CRCW0402330DFKED Vishay R3 0 1 A Chip Resistor ERJ2GEY0R00V Panasonic PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ27333BT1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC3 VDECT VCC1 VCC2 C12 C11 R3 C10 C9 C8 C14 C13 L3 L2 RFIN C7 L1 C1 C4 C6 C2 C5 R1 R2 RFOUT C3 M70506 QFN 44--24E Rev. 1 VBIAS PCB actual size: 1.30 1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 13. MMZ27333BT1 Test Circuit Component Layout Table 7. MMZ27333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3 22 pF Chip Capacitors 04023K220BBS AVX C2 3.6 pF Chip Capacitor 04023J3R6BBS AVX C4, C9, C11, C13 1000 pF Chip Capacitors GCM155R71E103KA37D Murata C5, C12 1 F Chip Capacitors GRM188R61A105KA61D Murata C6 22 pF Chip Capacitor GRM155C1H220GA01D Murata C7 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8 470 pF Chip Capacitor GRM1555C1H471JA01D Murata C10 0.01 F Chip Capacitor C0603C103J5RACTU Kemet C14 4.7 F Chip Capacitor GRM188R60J475KE19D Murata L1 56 nH Chip Inductor 0603CS-56NXJL Coilcraft L2 12 nH Chip Inductor 0603HC-12NXGLW Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8XJLW Coilcraft R1 1.2 k Chip Resistor RC0402FR-071K20L Yageo R2 330 1/16 W Chip Resistor CRCW0402330DFKED Vishay R3 0 1 A Chip Resistor ERJ2GEY0R00V Panasonic PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION 38 –14 –16 37 –18 36 S21 (dB) S11 (dB) –20 –22 –24 35 34 –26 33 –28 –30 1900 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc 2000 2100 2200 32 1900 2300 2000 2100 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 14. S11 versus Frequency Figure 15. S21 versus Frequency 2300 –6 –8 –10 S22 (dB) –12 –14 –16 –18 –20 –22 1900 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc 2000 2100 2200 2300 f, FREQUENCY (MHz) Figure 16. S22 versus Frequency MMZ27333BT1 10 RF Device Data Freescale Semiconductor, Inc. 38 Gps, POWER GAIN (dB) 37 500 ICC, COLLECTOR CURRENT (mA) –38 V =V =V =V = 5 Vdc, f = 2140 MHz –40 CC1 CC2 CC3 BIAS Single--Carrier W--CDMA 3GPP TM1 Unclipped –42 –44 –46 –48 –50 –52 –54 –56 –58 –60 –62 –64 10 12 14 16 18 20 22 24 350 ICC3 300 250 200 150 ICC2 100 ICC1 50 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 17. ACPR versus Output Power Figure 18. Stage Collector Current versus Output Power 26 2 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 1.8 36 35 34 33 32 10 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz 450 Single--Carrier W--CDMA 3GPP TM1 Unclipped 400 0 10 26 PDET, POWER DETECTOR (V) ACPR (dBc) 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION 1.6 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 1.4 1.2 1 0.8 0.6 0.4 0.2 12 14 16 18 20 22 24 26 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 19. Power Gain versus Output Power Figure 20. Power Detector versus Output Power MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 11 0.50 3.00 4.40 0.30 2.6 2.6 solder pad with thermal via structure. All dimensions in mm. Figure 21. PCB Pad Layout for 24--Lead QFN 4 4 MA13 WLYW Figure 22. Product Marking MMZ27333BT1 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 13 MMZ27333BT1 14 RF Device Data Freescale Semiconductor, Inc. MMZ27333BT1 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Jan. 2016 Description Initial Release of Data Sheet MMZ27333BT1 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. MMZ27333BT1 Document Number: RF Device Data MMZ27333B Rev. 0, 1/2016Semiconductor, Inc. Freescale 17