Freescale Semiconductor Technical Data Document Number: MMG30271B Rev. 0, 3/2016 Driver or Pre--driver General Purpose Amplifier MMG30271BT1 The MMG30271B is a 1/2 W, Class AB, high gain amplifier designed as a driver or pre--driver for cellular base station Doherty amplifiers and general purpose small signal applic ations . Its v ers atile des ign enables operation from 900–4300 MHz, covering the 3G and 4G cellular bands. Features 900–4300 MHz, 17.5 dB @ 2140 MHz 26.9 dBm BTS DRIVER AMPLIFIER P1dB: 26.9 dBm @ 2140 MHz Gain: 17.5 dB @ 2140 MHz Suitable for Doherty Amplifiers and BTS Transmitters 5 V Single Supply, 134 mA Quiescent Current SOT--89 Package 50 Ohm Operation with Minimal External Matching SOT--89 Table 1. Load Pull Performance (1) Symbol 900 MHz 1900 MHz 2140 MHz 2600 MHz 3500 MHz 4200 MHz Unit Maximum Available Gain Characteristic MAG 24.9 18.9 17.7 15.7 13.1 12.1 dB Pout @ 1dB Compression P1dB 29.0 (2) 27.3 (2) 27.2 27.3 27.4 27.1 dBm Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 240 mA RF Input Power Pin 23 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C Symbol Value (3) Unit RJC 33 C/W Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 65C, 5 Vdc, 138 mA, no RF applied 1. VCC = 5 Vdc, TA = 25C, CW. 2. Maximum allowable current not to exceed 240 mA. 3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG30271BT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Gp 16.8 17.5 — dB P1dB — 26.9 — dBm Input Return Loss (S11) IRL — –9.2 — dB Output Return Loss (S22) ORL — –11.4 — dB Supply Current ICC 107.5 134 142.5 mA Supply Voltage VCC — 5 — V Characteristic Small--Signal Gain (S21) Power Output @ 1dB Compression Table 5. Functional Pin Description Pin Number 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 2 Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 8. Ordering Information Device MMG30271BT1 Tape and Reel Information T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel Package SOT--89 MMG30271BT1 2 RF Device Data Freescale Semiconductor, Inc. Pout (MAX AVG.), MAXIMUM AVERAGE OUTPUT POWER (dBm) 28 Table 9. ACPR versus Frequency (LTE 10 MHz, ACPR = –48 dBc) 27 ACPR = –48 dBc 26 25 24 VCC = 5 Vdc 23 800 1200 1600 2000 2400 2800 3200 3600 4000 f (MHz) Pout (dBm) Gain (dB) ICC (mA) 1900 16 19.2 147 2140 17.5 17.2 148 2600 17.5 16 144 3500 16.9 13.7 134 4250 17.6 11.5 138 f, FREQUENCY (MHz) Note: Maximum allowable current not to exceed 240 mA. Figure 2. Maximum Average Output Power versus Frequency MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz 2 RF INPUT 1 2 3 C1 C2 R1 RF OUTPUT C5 C6 L1 C3 C4 C7 VCC Figure 3. MMG30271BT1 Test Circuit Schematic Table 10. MMG3027BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GJM1555C1H1R5BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 1.3 pF Chip Capacitor GJM1555C1H1R3BB01 Murata C6 1.8 pF Chip Capacitor GJM1555C1H1R8BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 3.9 nH Chip Inductor LL1608--FSL3N9S Toko R1 0 , 1 A Chip Resistor RCO402JR--070RL Yageo PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL MMG30271BT1 4 RF Device Data Freescale Semiconductor, Inc. VCC 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz RFIN C7 C4 RFOUT C3 C1 L1 C6 C2 C5 R1 M94451 SOT--89--3D Rev. 0 PCB actual size: 1.3 1.46. Figure 4. MMG30271BT1 Test Circuit Component Layout Table 10. MMG30371BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GJM1555C1H1R5BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 1.3 pF Chip Capacitor GJM1555C1H1R3BB01 Murata C6 1.8 pF Chip Capacitor GJM1555C1H1R8BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 3.9 nH Chip Inductor LL1608--FSL3N9S Toko R1 0 , 1 A Chip Resistor RCO402JR--070RL Yageo PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 5 20 –2 19 –4 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz –40C 18 25C 17 85C 16 15 14 2000 –6 –8 –40C –10 25C –12 85C VCC = 5 Vdc 2050 2100 2150 2200 2250 –14 2000 2300 2050 2100 2150 VCC = 5 Vdc 2200 2250 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Small--Signal Gain (S21) versus Frequency and Temperature Figure 6. Input Return Loss (S11) versus Frequency and Temperature 2300 ORL, OUTPUT RETURN LOSS (dB) –6 –8 –10 –12 –40C –14 25C 85C –16 –18 2000 VCC = 5 Vdc 2050 2100 2150 2200 2250 2300 f, FREQUENCY (MHz) Figure 7. Output Return Loss (S22) versus Frequency and Temperature MMG30271BT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz 8 20 Gps, POWER GAIN (dB) 6 5 4 3 –40C 18 25C 17 85C 16 VCC = 5 Vdc 2 1500 15 1700 1900 2100 2500 2300 11 180 17 19 Figure 8. Noise Figure versus Frequency Figure 9. Power Gain versus Output Power and Temperature 170 160 85C 150 140 25C 130 –40C 120 110 100 13 15 19 17 21 21 50 48 25C 85C 46 –40C 44 42 Pin = 4 dBm 40 2000 2050 2100 2150 2200 2250 2300 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 10. Collector Current versus Output Power and Temperature Figure 11. Third Order Output Intercept Point versus Frequency and Temperature ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 11 15 Pout, OUTPUT POWER (dBm) VCC = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 190 13 f, FREQUENCY (MHz) 200 ICC, COLLECTOR CURRENT (mA) VCC = 5 Vdc, f = 2140 MHz, CW 19 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) NF, NOISE FIGURE (dB) 7 –33 VCC = 5 Vdc, f = 2140 MHz, Single--Carrier W--CDMA 3GPP TM1 Unclipped –36 –39 –42 –45 –48 –40C –51 85C –54 –57 25C –60 –63 11 13 15 17 19 21 Pout, OUTPUT POWER (dBm) Figure 12. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power and Temperature MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM APPLICATION CIRCUIT: 1880–1920 MHz 2 RF INPUT 1 2 3 C1 L2 C6 L1 C2 C8 C5 C4 C3 RF OUTPUT C7 VCC Figure 13. MMG30271BT1 Test Circuit Schematic Table 11. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.2 pF Chip Capacitor GJM1555C1H1R2BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 2.2 pF Chip Capacitor GJM1555C1H2R2BB01 Murata C6 3.0 pF Chip Capacitor GJM1555C1H3R0BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata C8 2.4 pF Chip Capacitor GJM1555C1H2R4BB01 Murata L1 10 nH Chip Inductor LL1608--FH10NJ Toko L2 1.9 nH Chip Inductor 0402CS--1N9XJLW Coilcraft PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL MMG30271BT1 8 RF Device Data Freescale Semiconductor, Inc. VCC 50 OHM APPLICATION CIRCUIT: 1880–1920 MHz C7 C4 RFIN RFOUT C3 L1 C1 C6 C8 L2 C5 C2 M94451 SOT--89--3D Rev. 0 PCB actual size: 1.3 1.46. Figure 14. MMG30271BT1 Test Circuit Component Layout Table 11. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.2 pF Chip Capacitor GJM1555C1H1R2BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 2.2 pF Chip Capacitor GJM1555C1H2R2BB01 Murata C6 3.0 pF Chip Capacitor GJM1555C1H3R0BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata C8 2.4 pF Chip Capacitor GJM1555C1H2R4BB01 Murata L1 10 nH Chip Inductor LL1608--FH10NJ Toko L2 1.9 nH Chip Inductor 0402CS--1N9XJLW Coilcraft PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM TYPICAL CHARACTERISTICS: 1880–1920 MHz Gp, SMALL--SIGNAL GAIN (dB) 20 –4 IRL, INPUT RETURN LOSS (dB) 19 18 17 16 15 1800 1840 1880 1920 1960 –6 –8 –10 –12 –14 –16 –18 1800 2000 1840 1880 f, FREQUENCY (MHz) Figure 15. Small--Signal Gain (S21) versus Frequency 2000 20 19 –6 18 Gps, POWER GAIN (dB) ORL, OUTPUT RETURN LOSS (dB) 1960 Figure 16. Input Return Loss (S11) versus Frequency –4 –8 –10 –12 17 16 15 14 13 12 –14 1800 11 1840 1880 1960 1920 2000 VCC = 5 Vdc, f = 1900 MHz, CW 19 21 f, FREQUENCY (MHz) LTE 10 MHz @ f = 1900 MHz 154 150 146 142 138 134 130 4 6 8 10 12 14 16 18 20 22 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 158 27 29 Figure 18. Power Gain versus Output Power Single--Carrier W--CDMA @ f = 1900 MHz 162 25 Note: Maximum allowable current not to exceed 240 mA. 170 166 23 Pout, OUTPUT POWER (dBm) Figure 17. Output Return Loss (S22) versus Frequency ICC, COLLECTOR CURRENT (mA) 1920 f, FREQUENCY (MHz) 50 48 46 44 42 40 1800 1840 1880 1920 1960 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 19. Collector Current versus Output Power Figure 20. Third Order Output Intercept Point versus Frequency 2000 MMG30271BT1 10 RF Device Data Freescale Semiconductor, Inc. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 1880–1920 MHz –38 –42 –46 LTE 10 MHz @ f = 1900 MHz –50 –54 –58 Single--Carrier W--CDMA @ f = 1900 MHz –62 4 6 8 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Figure 21. Adjacent Channel Power Ratio versus Output Power MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM APPLICATION CIRCUIT: 2496–2690 MHz 2 RF INPUT 1 2 RF OUTPUT 3 L2 C1 C6 C5 L1 C3 C4 C2 C7 VCC Figure 22. MMG30271BT1 Test Circuit Schematic Table 12. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01 Murata C3 220 pF Chip Capacitor GRM1555C1H221JA01 Murata C4 2200 pF Chip Capacitor GRM1555C1H222JA01 Murata C5 1.8 pF Chip Capacitor GJM1555C1H1R8BB01 Murata C6 1.6 pF Chip Capacitor GJM1555C1H1R6BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 10 nH Chip Inductor 0603HC--10NXJLC Coilcraft L2 3.3 nH Chip Inductor 0402CS--3N3X Coilcraft PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL MMG30271BT1 12 RF Device Data Freescale Semiconductor, Inc. VCC 50 OHM APPLICATION CIRCUIT: 2496–2690 MHz C7 C4 RFIN RFOUT C3 L1 L2 C1 C6 R1 C5 C2 M94451 SOT--89--3D Rev. 0 PCB actual size: 1.3 1.46. Figure 23. MMG30271BT1 Test Circuit Component Layout Table 12. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01 Murata C3 220 pF Chip Capacitor GRM1555C1H221JA01 Murata C4 2200 pF Chip Capacitor GRM1555C1H222JA01 Murata C5 1.8 pF Chip Capacitor GJM1555C1H1R8BB01 Murata C6 1.6 pF Chip Capacitor GJM1555C1H1R6BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 10 nH Chip Inductor 0603HC--10NXJLC Coilcraft L2 3.3 nH Chip Inductor 0402CS--3N3X Coilcraft R1 0 , 1 A Chip Resistor RC0402JR--070RL Yageo PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 13 50 OHM TYPICAL CHARACTERISTICS: 2496–2690 MHz 0 17 16 15 14 13 2600 2700 –6 –8 –10 2400 2800 2600 2700 2800 f, FREQUENCY (MHz) Figure 24. Small--Signal Gain (S21) versus Frequency Figure 25. Input Return Loss (S11) versus Frequency –10 16 –12 15 –14 –16 –18 –20 2400 14 13 12 11 VCC = 5 Vdc VCC = 5 Vdc, f = 2600 MHz, CW 10 2500 2600 2700 15 2800 17 19 21 23 27 25 29 Pout, OUTPUT POWER (dBm) Figure 27. Power Gain versus Output Power 160 LTE 10 MHz @ f = 2600 MHz 150 140 130 Single--Carrier W--CDMA @ f = 2600 MHz 120 8 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) Figure 28. Collector Current versus Output Power 22 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) f, FREQUENCY (MHz) Figure 26. Output Return Loss (S22) versus Frequency 170 6 2500 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) ORL, OUTPUT RETURN LOSS (dB) 2500 –4 VCC = 5 Vdc VCC = 5 Vdc 12 2400 ICC, COLLECTOR CURRENT (mA) –2 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 18 50 48 46 44 42 Pin = 6 dBm 40 2400 2500 2600 2700 2800 f, FREQUENCY (MHz) Figure 29. Third Order Output Intercept Point versus Frequency MMG30271BT1 14 RF Device Data Freescale Semiconductor, Inc. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2496–2690 MHz –36 –40 –44 –48 LTE 10 MHz @ f = 2600 MHz –52 –56 Signal--Carrier W--CDMA @ f = 2600 MHz –60 4 6 8 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Figure 30. Adjacent Channel Power Ratio versus Output Power MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 15 50 OHM APPLICATION CIRCUIT: 3400–3600 MHz 2 RF INPUT 1 2 3 C1 C2 R1 RF OUTPUT C5 C6 L1 C3 C4 C7 VCC Figure 31. MMG30271BT1 Test Circuit Schematic Table 13. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.8 pF Chip Capacitor GJM1555C1H0R8BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 1.1 pF Chip Capacitor GJM1555C1H1R1BB01 Murata C6 1.1 pF Chip Capacitor GJM1555C1H1R1BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 10 nH Chip Inductor LL1608--FH10NJ Toko R1 0 , 1 A Chip Resistor RC0402JR--070RL Yageo PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL MMG30271BT1 16 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 3400–3600 MHz C7 C4 RFIN RFOUT C3 L1 C6 C1 R1 C5 C2 M94451 SOT--89--3D Rev. 0 PCB actual size: 1.3 1.46. Figure 32. MMG30271BT1 Test Circuit Component Layout Table 13. MMG30271BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.8 pF Chip Capacitor GJM1555C1H0R8BB01 Murata C2 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C3 1000 pF Chip Capacitor GCM155R71H102KA37 Murata C4 0.01 F Chip Capacitor GRM188R72A103KA01 Murata C5 1.1 pF Chip Capacitor GJM1555C1H1R1BB01 Murata C6 1.1 pF Chip Capacitor GJM1555C1H1R1BB01 Murata C7 1 F Chip Capacitor GRM155R61A105KE15 Murata L1 10 nH Chip Inductor LL1608--FH10NJ Toko R1 0 , 1 A Chip Resistor RC0402JR--070RL Yageo PCB Rogers R04350B, 0.010, r = 3.66 M94451 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 17 50 OHM TYPICAL CHARACTERISTICS: 3400–3600 MHz –2 14 –3 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 13 12 11 10 9 –5 –6 –7 –8 –9 –10 –11 8 3200 3300 3400 3500 3600 3700 –12 3200 3800 3400 3500 3600 3700 f, FREQUENCY (MHz) Figure 33. Small--Signal Gain (S21) versus Frequency Figure 34. Input Return Loss (S11) versus Frequency –4 15 –6 14 –8 –10 –12 3800 13 12 11 10 –14 VCC = 5 Vdc, f = 3500 MHz, CW VCC = 5 Vdc 9 3300 3400 3500 3600 3700 19 21 23 25 27 f, FREQUENCY (MHz) Pout, OUTPUT POWER (dBm) Figure 35. Output Return Loss (S22) versus Frequency Figure 36. Power Gain versus Output Power 135 134 LTE 10 MHz @ f = 3500 MHz 133 132 131 130 Single--Carrier W--CDMA @ f = 3500 MHz 129 128 4 17 3800 6 8 10 12 14 16 18 20 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) –16 3200 ICC, COLLECTOR CURRENT (mA) 3300 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) ORL, OUTPUT RETURN LOSS (dB) –4 50 48 46 44 42 VCC = 5 Vdc 40 3200 3300 3400 3500 3600 3700 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 37. Collector Current versus Output Power Figure 38. Third Order Output Intercept Point versus Frequency 3800 MMG30271BT1 18 RF Device Data Freescale Semiconductor, Inc. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 3400–3600 MHz –38 –42 –46 Single--Carrier W--CDMA @ f = 3500 MHz –50 LTE 10 MHz @ f = 3500 MHz –54 –58 –62 4 6 8 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) Figure 39. Adjacent Channel Power Ratio versus Output Power MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 19 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 40. PCB Pad Layout for SOT--89A M30271 AWLYWZ Figure 41. Product Marking MMG30271BT1 20 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 21 MMG30271BT1 22 RF Device Data Freescale Semiconductor, Inc. MMG30271BT1 RF Device Data Freescale Semiconductor, Inc. 23 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 2. Go to http://www.nxp.com/RF 3. Search by part number 4. Click part number link 5. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2016 Description Initial Release of Data Sheet MMG30271BT1 24 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. MMG30271BT1 Document Number: RF Device Data MMG30271B Rev. 0, 3/2016Semiconductor, Inc. Freescale 25