Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP3091N
Rev. 2, 10/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadcast and commercial aerospace broadband applications
with frequencies from 470 to 1215 MHz.
 Typical Performance (UHF 470--860 Reference Circuit): VDD = 50 Volts,
IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
18 Avg.
470
21.8
31.0
7.9
--27.8
650
21.6
26.4
8.4
--37.6
860
21.7
27.6
7.1
--30.4
 Typical Performance (L--Band 960--1215 MHz Circuit): VDD = 50 Volts,
IDQ = 100 mA.
Signal Type
Pulse
(128 sec, 10% Duty
Cycle)
Pout
(W)
f
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
90 Peak
960
1.3
18.4
55.3
1030
1.41
18
56.9
1090
1.65
17.4
50.7
1215
1.68
17.3
51.0
Features
 Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Input Matched for Ease of Use
 Qualified Up to a Maximum of 50 VDD Operation
 Excellent Thermal Stability
 Device can be used Single--Ended or in a Push--Pull Configuration
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
MRF6VP3091N
MRF6VP3091NB
470--1215 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
TO--270WB--4
PLASTIC
MRF6V3090N
TO--272WB--4
PLASTIC
MRF6V3090NB
PARTS ARE PUSH--PULL
Gate 1
Drain 1
Gate 2
Drain 2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2011, 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091N MRF6VP3091NB
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +115
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (1,2)
TJ
225
C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
Case Temperature 80C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
RJC
0.79
0.82
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
0.5
Adc
V(BR)DSS
115
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
Adc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 0.25 Adc)
VDS(on)
—
0.2
—
Vdc
Reverse Transfer Capacitance (5)
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
41
—
pF
Output Capacitance (5)
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
65.4
—
pF
Input Capacitance (5)
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
591
—
pF
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 50 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
5. Part internally input matched.
(continued)
MRF6VP3091N MRF6VP3091NB
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
D
27.5
28.5
—
%
ACPR
—
--62.0
--60.0
dBc
IRL
—
--14
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Table 6. Ordering Information
Device
MRF6V3090NR1
MRF6V3090NBR1
MRF6V3090NR5
MRF6V3090NBR5
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
TO--270WB--4
TO--272WB--4
TO--270WB--4
TO--272WB--4
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
3
VBIAS
VSUPPLY
+
+
C1
R1
C2
C8
C3
C9
C10
Z14
Z15 Z16
Z8
Z10
RF
INPUT
C4 R2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C5
Z9
DUT
Z12
Z13
Z17
Z18
RF
OUTPUT
C14
C6
C15
C7
C11
C12
C13
Z11
+
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.266  0.067 Microstrip
0.331  0.067 Microstrip
0.598  0.067 Microstrip
0.315  0.276 Microstrip
0.054  0.669 Microstrip
0.419  0.669 Microstrip
0.256  0.669 Microstrip
0.986  0.071 Microstrip
0.201  0.571 Microstrip
Z10, Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
C17
C18
1.292  0.079 Microstrip
0.680  0.571 Microstrip
0.132  0.117 Microstrip
0.705  0.117 Microstrip
0.159  0.117 Microstrip
0.140  0.067 Microstrip
0.077  0.067 Microstrip
0.163  0.067 Microstrip
Figure 2. MRF6VP3091N 860 MHz Single--Ended Narrowband Test Circuit Schematic
Table 7. MRF6VP3091N 860 MHz Single--Ended Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kermet
C2, C9, C17
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C3, C5, C8, C14, C16
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C4
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C6
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C7
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C10, C18
220 F, 100 V Electrolytic Capacitors
EEVFK2A221M
Panasonic--ECG
C11, C15
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C12
3.0 pF Chip Capacitor
ATC100B3R0CT500XT
ATC
C13
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
R1
10 k, 1/4 W Chip Resistor
CRCW120610KOJNEA
Vishay
R2
10 , 1/4 W Chip Resistor
CRCW120610ROJNEA
Vishay
PCB
0.030, r = 3.5
RF--35
Taconic
MRF6VP3091N MRF6VP3091NB
4
RF Device Data
Freescale Semiconductor, Inc.
-C1
C10
C8
C2
C3
C4
C5
C6
C7
MRF6V3090N
Rev. 0
C11
R2
C15
CUT OUT AREA
R1
C9
C16
C14
C12
C13
C17
C18
--
Figure 3. MRF6VP3091N 860 MHz Single--Ended Narrowband Test Circuit Component Layout
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
24
Ciss
70
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
Coss
Crss
0
10
40
20
30
19
20
D
10
50
10
1
100
0
200
Pout, OUTPUT POWER (WATTS)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Single--Ended
Narrowband Test Circuit)
25
P3dB = 51.28 dBm (134.3 W)
55
54
Ideal
24
23
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
Actual
51
50
49
48
--6
--5
--4
--3
--2
--1
0
1
2
3
22
21
20
19
50 V
18
45 V
17
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
47
IDQ = 350 mA, f = 860 MHz
VDD = 40 V
16
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
4
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS)
Figure 6. CW Output Power versus Input Power
(Single--Ended Narrowband Test Circuit)
Figure 7. CW Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
25
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
70
TC = --30_C
Gps, POWER GAIN (dB)
24
60
Gps
23
TC = --30_C
85_C
50
25_C
22
40
21
85_C
30
25_C
D
20
20
10
19
18
1
10
100
D, DRAIN EFFICIENCY (%)
52
21
17
40
30
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
56
53
20
22
18
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
10
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
100
60
Gps
Gps, POWER GAIN (dB)
C, CAPACITANCE (pF)
23
D, DRAIN EFFICIENCY (%)
1000
0
200
Pout, OUTPUT POWER (WATTS)
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
(Single--Ended Narrowband Test Circuit)
MRF6VP3091N MRF6VP3091NB
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TWO--TONE (SINGLE--ENDED NARROWBAND TEST CIRCUIT)
--20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--10
VDD = 50 Vdc, IDQ = 350 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
--20
--30
3rd Order
--40
5th Order
--50
--60
7th Order
--70
10
1
100
200
--30
3rd Order
--35
--40
5th Order
--45
--50
--55
7th Order
--60
--65
1
90
10
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Output Power
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
23.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--10
23
Gps, POWER GAIN (dB)
VDD = 50 Vdc, Pout = 90 W (PEP), IDQ = 350 mA
f = 860 MHz, Two--Tone Measurements
--25
IDQ = 450 mA
22.5
22
350 mA
21.5
300 mA
21 250 mA
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
20.5
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
--20
--30
IDQ = 250 mA
--40
300 mA
--50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Two--Tone Power Gain versus
Output Power
200
450 mA
350 mA
--60
20
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Third Order Intermodulation
Distortion versus Output Power
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
--20
7.61 MHz
--30
10
--50
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
0.01
--90
--110
2
0
4
6
8
10
12
--2
--1
0
1
2
3
4
Figure 14. DVB--T (8k OFDM) Spectrum
300 mA
250 mA
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
10
40
--54
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
--56
--58
--60
IDQ = 250 mA
--62
300 mA
--64
350 mA
--66
450 mA
--68
10
1
Pout, OUTPUT POWER (WATTS) AVG.
Gps, POWER GAIN (dB)
D, DRAIN
EFFICIENCY (%)
Figure 16. Single--Carrier DVB--T (8k OFDM)
ACPR versus Output Power (Single--Ended
Narrowband Test Circuit)
50
--30_C
VDD = 50 Vdc, IDQ = 350 mA
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
20
--45
--50
D
25_C
30
85_C
--55
85_C
Gps
--60
TC = --30_C
25_C
ACPR
--65
10
0
--70
1
40
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier DVB--T (8k OFDM)
Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
40
5
10
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
1
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Gps, POWER GAIN (dB)
--3
Figure 13. Single--Carrier DVB--T (8k OFDM)
350 mA
20.5
--4
f, FREQUENCY (MHz)
22.5
21
--5
PEAK--TO--AVERAGE (dB)
IDQ = 450 mA
21.5
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
--100
23
22
4 kHz BW
ACPR Measured at 4 MHz Offset
from Center Frequency
--70
--80
0.001
0.0001
4 kHz BW
--60
0.1
(dB)
PROBABILITY (%)
--40
1
40
Pout, OUTPUT POWER (WATTS) AVG.
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain Efficiency,
Power Gain and ACPR versus Output Power versus
Temperature (Single--Ended Narrowband Test Circuit)
MRF6VP3091N MRF6VP3091NB
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
109
VDD = 50 Vdc
Pout = 18 W Avg.
D = 28.5%
MTTF (HOURS)
108
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 18. MTTF versus Junction Temperature -- CW
VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Average
f
MHz
Zsource

Zload

860
1.58 -- j0.89
3.51 -- j3.98
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 19. Series Equivalent Source and Load Impedance (Single--Ended Narrowband Test Circuit)
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
9
470--860 MHz BROADBAND REFERENCE CIRCUIT
VDD = 50 Volts, IDQ = 450 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output Signal PAR
(dB)
IMD Shoulder
(dBc)
DVB--T (8k OFDM)
4.5 Avg.
470
21.7
12.6
10.1
--40.1
650
21.5
11.2
10.1
--43.1
860
21.9
11.6
9.8
--46.0
470
21.8
20.3
9.9
--35.9
650
21.6
17.5
9.9
--40.9
860
21.9
18.5
9.1
--41.7
470
21.8
31.0
7.9
--27.8
650
21.6
26.4
8.4
--37.6
860
21.7
27.6
7.1
--30.4
9 Avg.
18 Avg.
VGG
VDD
C11
C13
R1
C21
C19
C23
C1
C3
C10
R3
C7
C2
R2
VGG
C14
C12
C8
C5
R4
C4
Q1
C20
MRF6VP3091N
Rev. 1
C9
C24
C22
VDD
Note: Component numbers C6, C15, C16, C17 and C18 are not used.
Figure 20. MRF6VP3091N 470--860 MHz Broadband 2  3.6 Compact Reference
Circuit Component Layout
Figure 21. MRF6VP3091N 470--860 MHz Broadband 2  3.6 Compact Reference
Circuit Component Layout — Bottom
MRF6VP3091N MRF6VP3091NB
10
RF Device Data
Freescale Semiconductor, Inc.
0.430
0.642
0.831
A
2.800
1.160
B
1.359
1.570
E
C
D
0.490
1.965
1.875
2.000
1.635
0.420
C
1.000
1.171
1.405
1.500
D
Side View, Typ both ends
0.595
A
0.324
0.000
0.129
3.475
3.600
R0.370
0.500
3.380
2.640
1.980
2.105
1.800
1.495
1.620
0.800
0.000
0.125
E
0.125
0.0000
Diamond Saw (0.015) 2X
0.0050
0.000
A
A
0.250
E
0.490
E
0.270
Drill from bottom Dia. = 0.257
T0--272 0.490 Copper Heatsink (for 30 mil 1 oz/1 oz PCB)
Designators
Details
A
2 places, mill down cavity 0.250
B
2 places, on sides, 0.1875 diameter notch 0.020 deep (N connector notch)
C
4 places, side, drill & tap #2--56 screw 0.500 deep (SMA holes)
D
4 places, side, drill & tap #4--40 screw 0.500 deep (N conn holes)
E
2 places drill diameter = 0.257, from bottom depth = 0.270
All others, drill through & tap for #4--40 screw
Figure 22. MRF6VP3091N 470--860 MHz Broadband 2  3.6 Compact Reference
Circuit Component Layout — Heatsink
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
11
Table 8. MRF6VP3091N 470--860 MHz Broadband 2  3.6 Compact Reference Circuit Component Designations
and Values
Part
Description
Part Number
Manufacturer
C1, C3, C4, C7, C8, C10
51 pF Chip Capacitors
ATC100B510GT500XT
ATC
C2
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C5
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C9
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C11, C12
47 F, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C13, C14, C19, C20
200 pF Chip Capacitors
ATC100B201JT300XT
ATC
C21, C22
2.2 F, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C23, C24
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
Q1
RF High Power Transistor
MRF6VP3091NBR1
Freescale
R1, R2
10  Chip Resistors
CRCW120610R0JNEA
Vishay
R3, R4
56  Chip Resistors
CRCW120656R0FKEA
Vishay
PCB
0.030, r = 3.5
RO4350B
Rogers
MRF6VP3091N MRF6VP3091NB
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RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
26
70
VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
60
Pout = 4.5 W
9 W 50
22
Gps
18 W
40
20
18 W 30
D
18
9 W 20
16
14
450
D DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24
4.5 W
500
550
600
650
700
750
800
10
900
850
f, FREQUENCY (MHz)
Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
10
OUTPUT PAR (dB)
10
VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
Pout = 4.5 W
9W
8
PAR
18 W
6
IMD(1)
4
18 W
0
--10
--20
--30
9 W --40
2
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
12
4.5 W
0
450
500
550
600
650
700
750
800
850
--50
900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
24
Gps, POWER GAIN (dB)
80
VDD = 50 Vdc, IDQ = 450 mA
Pulse Width = 100 sec, 10% Duty Cycle
70
470 MHz
Gps
22
600 MHz
60
750 MHz
20
750 MHz
18
860 MHz
D
16
14
0
860 MHz
20
40
60
80
100
600 MHz
470 MHz
50
40
30
120
140
D DRAIN EFFICIENCY (%)
26
20
160
Pout, OUTPUT POWER (WATTS) PULSED
Figure 25. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
MRF6VP3091N MRF6VP3091NB
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RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
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MRF6VP3091N MRF6VP3091NB
16
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
17
MRF6VP3091N MRF6VP3091NB
18
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2011
 Initial Release of Data Sheet
1
Dec. 2011
 Added R5 part numbers MRF6VP3091NR5 and MRF6VP3091NBR5, p. 1
 Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis
scale from 0 to 140 watts to 10 to 150 watts, p. 5
 Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
 Added Fig. 21, 470--860 MHz Broadband 2  3.6 Compact Reference Circuit Component Layout -470--860 MHz -- Bottom, p. 10
 Added Fig. 22, 470--860 MHz Broadband 2  3.6 Compact Reference Circuit Component Layout -470--860 MHz -- Heatsink, p. 10
2
Oct. 2015
 Added L--Band 960--1215 MHz performance data, p. 1
 Replaced Case Outline TO--270WB--4 Issue D with Issue E, p. 1, 14–16. Added notes 9 and 10, four
exposed source tabs, and a feature control frame to E and E5 on p. 14. Removed style and pin information
from notes section on p. 16.
MRF6VP3091N MRF6VP3091NB
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RF Device Data
Freescale Semiconductor, Inc.
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MRF6VP3091N MRF6VP3091NB
Document
Number:
RF
Device
Data MRF6VP3091N
Rev. 2, 10/2015
Freescale
Semiconductor, Inc.
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