Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT18S230S
Rev. 2, 3/2013
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 50 watt RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
18.9
32.0
7.2
--35.0
--19
1840 MHz
19.1
32.0
7.1
--35.0
--18
1880 MHz
19.0
32.0
6.8
--34.0
--11
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 12.
AFT18S230SR3
1805--1880 MHz, 50 W AVG., 28 V
NI--780S--6
N.C. 1
6 VBW
RFin/VGS 2
5 RFout/VDS
4 VBW
N.C. 3
(Top View)
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2012--2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
CW Operation @ TC = 25C when DC current is fed through drain lead, pin 5
Derate above 25C
CW
253
1.7
W
W/C
CW Operation @ TC = 25C when DC current is fed through pin 4 and pin 6
Derate above 25C
CW
83
0.41
W
W/C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1800 mA, 1840 MHz
Case Temperature 92C, 160 W CW(4), 28 Vdc, IDQ = 1800 mA, 1840 MHz
RJC
C/W
0.41
0.31
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 291 Adc)
VGS(th)
1.5
2.0
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test)
VGS(Q)
2.3
2.8
3.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
18.0
19.0
21.0
dB
Drain Efficiency
D
30.5
32.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
6.4
6.8
—
dB
ACPR
—
--34.0
--32.0
dBc
IRL
—
--11
--7
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT18S230SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1800 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 257 W CW(1) Output Power
(3 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
207
—
W

—
7.6
—

VBWres
—
90
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.35
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.01
—
dB/C
P1dB
—
0.37
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C15
C21
C19
C5
C11
C13
C16
C6
R1
C1
C3
C4
R2
CUT OUT AREA
C2
C23
C9
C24
C10
C8
C18
C14
C22
C7
C20
C17
C12
AFT18S230S
Rev. 0
Figure 2. AFT18S230SR3 Test Circuit Component Layout
Table 5. AFT18S230SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C21, C22, C23
27 pF Chip Capacitors
ATC600F270JT250XT
ATC
C2
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C3, C4
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C5, C6, C7, C8
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C9, C24
39 pF Chip Capacitors
ATC600F390JT250XT
ATC
C10
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C11, C12, C13, C14, C15,
C16, C17, C18
10 F, 100 V Chip Capacitors
C5750X7S2A106M
TDK
C19, C20
330 F, 63 V Electrolytic Capacitors
MCRH63V337M13X21-RH
Multicomp
R1, R2
4.75 , 1/4 W Chip Resistors
CRCW12064R75FNEA
Vishay
PCB
0.020, r = 3.5
RO4350
Rogers
AFT18S230SR3
4
RF Device Data
Freescale Semiconductor, Inc.
33
D
19.4
19.2 Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
19
18.8
32
31
Gps
PARC
--31
--4
--32
--8
18.6
--33
18.4
--34
IRL
18.2
--35
ACPR
18
1760
1780
1800
1820
1840
1860
1880
--12
--16
--20
--36
1920
1900
--24
--3
--3.2
--3.4
--3.6
--3.8
PARC (dB)
34
IRL, INPUT RETURN LOSS (dB)
19.6
Gps, POWER GAIN (dB)
35
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
19.8
ACPR (dBc)
20
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
--10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 1840 MHz
IM3--U
--30
IM3--L
--40
IM5--L
--50
--60
IM5--U
IM7--L
1
IM7--U
10
100
TWO--TONE SPACING (MHz)
20.5
--1
20
19.5
19
18.5
VDD = 28 Vdc, IDQ = 1800 mA, f = 1840 MHz
18
--1 dB = 20 W
--2
D
PARC
ACPR
--3 dB = 45 W
40
--20
35
--25
30
--2 dB = 35 W
--3
25
--4
--5
--6
20
Gps
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10
25
40
55
70
--30
--35
ACPR (dBc)
0
D DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
15
--45
10
--50
85
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
19
1880 MHz
1880 MHz
1840 MHz
Gps
50
--10
40
ACPR
VDD = 28 Vdc, IDQ = 1800 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
17
0
1805 MHz
1805 MHz
18
60
1880 MHz
16
30
20
10
1840 MHz
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
20 1840 MHz
D
D, DRAIN EFFICIENCY (%)
21
--50
1805 MHz
0
300
15
1
10
100
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
23
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1800 mA
20
GAIN (dB)
19
10
Gain
0
17
15
--10
IRL
13
11
1500
IRL (dB)
21
30
--20
1600
1700
1800
1900
2000
2100
2200
--30
2300
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT18S230SR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
(1)
P1dB
P3dB
Max
Linear
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
f
(MHz)
Zsource
()
Zin
()
1805
0.80 - j3.40
1.00 + j3.41
1.09 - j2.10
18.5
54.2
263
57.8
-10
55.1
324
59.9
-16
1840
1.10 - j3.70
1.30 + j3.80
1.20 - j2.30
18.5
54.2
263
57.1
-9
55.2
331
61.1
-16
1880
1.40 - j4.10
1.70 + j4.13
1.11 - j2.30
18.7
54.2
263
57.9
-10
55.0
316
59.5
-16
Zload
()
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 8. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
(dBm)
1805
0.80 - j3.40
1.00 + j3.50
1.90 - j0.50
21.7
1840
1.10 - j3.70
1.30 + j3.83
1.90 - j0.90
1880
1.40 - j4.10
1.80 + j4.30
1.50 - j1.10
P3dB
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
51.5
141
70.0
-17
53.2
209
71.9
-22
21.4
51.9
155
70.1
-15
52.9
195
72.8
-24
21.3
52.2
166
69.9
-17
52.8
191
71.2
-25
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
0
--0.5
51
--1
52.5
52
--1.5
--2
53
53.5
P
E
--1
52.5
--3
--2
1.5
2
2.5
3
62
P
54
--3
1
64
--1.5
--2.5
54
0.5
66
70
51.5
E
62
68
IMAGINARY ()
IMAGINARY ()
--0.5
--2.5
0
50
50.5
0.5
1
60
58
56
1.5
2
56
2.5
3
REAL ()
REAL ()
Figure 10. P1dB Load Pull Output Power Contours (dBm)
Figure 11. P1dB Load Pull Efficiency Contours (%)
0
0
22.5
22
--26
--24
--22
--20
--18
--16
--0.5
21.5
E
--1
IMAGINARY ()
IMAGINARY ()
--0.5
21
--1.5
19
18.5
--2
20.5
E
--14
--1.5
--12
--2
20
P
--2.5
--1
19.5
--3
--10
P
--2.5
--3
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
REAL ()
REAL ()
Figure 12. P1dB Load Pull Gain Contours (dB)
Figure 13. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
3
Power Gain
Drain Efficiency
ACPR
PARC
AFT18S230SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
0
--0.5
70
--0.5
52
--1
52.5
E
IMAGINARY ()
IMAGINARY ()
0
51
51.5
53
--1.5
--2
54.5
P
--2.5
54
53.5
68
--1
E
--1.5
--2
P
--2.5
55
66
54 56
64
62
60
58
--3
--3
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
REAL ()
REAL ()
Figure 14. P3dB Load Pull Output Power Contours (dBm)
Figure 15. P3dB Load Pull Efficiency Contours (%)
0
0
20.5
20
--0.5
19.5
--1
IMAGINARY ()
IMAGINARY ()
--0.5
E
19
--1.5
17
16.5
--2
18.5
--1.5
--16
P
--14
--3
--3
0.5
1
1.5
2
2.5
3
--20
--2
--2.5
17.5
E
--18
18
P
--2.5
--30
--28
--26
--24
--22
--1
0.5
1
1.5
2
2.5
REAL ()
REAL ()
Figure 16. P3dB Load Pull Gain Contours (dB)
Figure 17. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
3
Power Gain
Drain Efficiency
ACPR
PARC
AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT18S230SR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.
The R5 tape and reel option for AFT18S230S part will be available for 2 years after release of AFT18S230S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18S230S in the R3
tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2012
 Initial Release of Data Sheet
1
Nov. 2012
 Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 12
2
Mar. 2013
 Table 1. Maximum Ratings: added CW Operation rating and derate factor if the part is biased through pin 4
and pin 6, p. 2
AFT18S230SR3
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2012--2013 Freescale Semiconductor, Inc.
AFT18S230SR3
Document
Number:
RF
Device
Data AFT18S230S
Rev. 2, 3/2013
Freescale
Semiconductor, Inc.
13