Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT20P060--4N
Rev. 1, 12/2013
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 6.3 W RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 1805 to 2170 MHz.
AFT20P060--4NR3
AFT20P060--4GNR3
2100 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
2110 MHz
18.6
20.0
2140 MHz
18.8
2170 MHz
18.9
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
9.4
–43.0
–13
20.0
9.2
–42.5
–14
20.0
9.1
–42.5
–14
1800 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
18.8
23.0
9.5
–43.0
–10
1840 MHz
19.1
23.8
9.4
–42.9
–15
1880 MHz
18.7
24.5
9.1
–42.9
–10
1805–2170 MHz, 6.3 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
OM--780--4L
PLASTIC
AFT20P060--4NR3
OM--780G--4L
PLASTIC
AFT20P060--4GNR3
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT20P060--4NR3 AFT20P060--4GNR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
(1,2)
TJ
–40 to +225
C
Characteristic
Symbol
Value (2,3)
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 77C, 6.3 W CW, 28 Vdc, IDQ = 450 mA, 2140 MHz
Case Temperature 80C, 60 W CW, 28 Vdc, IDQ = 450 mA, 2140 MHz
RJC
Unit
C/W
0.56
0.53
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 36 Adc)
VGS(th)
1.5
2.0
2.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 450 mAdc)
VGS(Q)
—
2.9
—
Vdc
Fixture Gate Quiescent Voltage (5)
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGG(Q)
5.3
5.8
6.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.36 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
5. VGG = 2  VGS(Q). Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture Layout.
(continued)
AFT20P060--4NR3 AFT20P060--4GNR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
17.5
18.9
20.5
dB
Drain Efficiency
D
18.7
20.0
—
%
PAR
8.7
9.1
—
dB
ACPR
—
–42.5
–40.5
dBc
IRL
—
–14
–7
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 450 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 83 W CW Output Power
(3 dB Input Overdrive from 60 W CW Rated Power)
No Device Degradation
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
60
—
W

—
–20
—

VBWres
—
70
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 6.3 W Avg.
GF
—
0.33
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.012
—
dB/C
P1dB
—
0.0002
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz frequency range. Measurement made on a
single path of the device under Class AB conditions, Pout = 47 W,
IDQ = 177 mA.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
1. Part internally matched both on input and output.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
3
--
R2
R3
C14
C13
C15
C9 C10
C7
R1
C2
C3
CUT OUT AREA
C4
C1
C6
C5
C8
C11 C12
AFT20P060--4N
Rev. 0
Figure 2. AFT20P060--4NR3 Test Circuit Component Layout — 2110–2170 MHz
Table 6. AFT20P060--4NR3 Test Circuit Component Designations and Values — 2110–2170 MHz
Part
Description
Part Number
Manufacturer
C1, C7, C8, C15
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C2
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C3
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C4, C5
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C6
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C9, C10, C11, C12, C14
10 F Chip Capacitors
C5750X7S2A106M
Kemet
C13
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
R1
5.9 , 1/4 W Chip Resistor
CRCW12065R90FKEA
Vishay
R2, R3
2 K, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
PCB
0.030, r = 2.55
AD255A
Arlon
AFT20P060--4NR3 AFT20P060--4GNR3
4
RF Device Data
Freescale Semiconductor, Inc.
Gps, POWER GAIN (dB)
18.6
18.4
21.5
D
21
20.5
Gps
18.2
20
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
18
17.8
17.6
ACPR
17.4
17.2
PARC
IRL
17
2060
2080
2100
2120
2140
2160
2180
--42
--4
--43
--8
--44
--45
--46
ACPR (dBc)
18.8
--12
--16
--20
--47
2220
2200
--24
--0
--0.2
--0.4
--0.6
--0.8
PARC (dB)
22
VDD = 28 Vdc, Pout = 6.3 W (Avg.)
IDQ = 450 mA, Single--Carrier W--CDMA
IRL, INPUT RETURN LOSS (dB)
19
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 6.3 Watts Avg.
--10
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 450 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 2140 MHz
IM3--U
--30
IM3--L
--40
IM5--L
IM5--U
IM7--L
--50
--60
IM7--U
1
10
100
TWO--TONE SPACING (MHz)
19
0
18.8
18.6
18.4
18.2
18
VDD = 28 Vdc, IDQ = 450 mA, f = 2140 MHz
Single--Carrier W--CDMA
--1 dB = 8 W
D
--1
Gps
--2
--5
--3 dB = 15 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
5
10
15
--10
20
PARC
0
50
30
--2 dB = 11 W
--4
0
40
ACPR
--3
60
20
25
--20
--30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
19.2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--50
0
--60
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
19
18 2140 MHz
2140 MHz
2110 MHz
ACPR
2110 MHz
Gps
2140 MHz
16
0
50
--10
40
2110 MHz
2170 MHz
17
60
D
30
20
10
--20
--30
--40
ACPR (dBc)
20
Gps, POWER GAIN (dB)
2170 MHz
VDD = 28 Vdc, IDQ = 450 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
D, DRAIN EFFICIENCY (%)
21
--50
2170 MHz
0
100
15
1
10
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
23
Gain
19
GAIN (dB)
20
10
0
17
15
IRL (dB)
21
30
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 450 mA
--10
IRL
13
--20
11
1800
1900
2000
2100
2200
2300
2400
2500
--30
2600
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT20P060--4NR3 AFT20P060--4GNR3
6
RF Device Data
Freescale Semiconductor, Inc.
ALTERNATE CHARACTERIZATION — 1805–1880 MHz
R2
C13
R3
C14
C15
C9 C10
C7
C16
R1
C2
C3
C17
CUT OUT AREA
C4
C1
C6
C5
C8
C11 C12
AFT20P060--4N
Rev. 0
Figure 8. AFT20P060--4NR3 Test Circuit Component Layout — 1805–1880 MHz
Table 7. AFT20P060--4NR3 Test Circuit Component Designations and Values — 1805–1880 MHz
Part
Description
Part Number
Manufacturer
C1
11 pF Chip Capacitor
ATC100B110JT500XT
ATC
C2, C5
1.1 pF Chip Capacitors
ATC100B1R1BT500XT
ATC
C3
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C4
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C6
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C7, C8, C15
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C9, C10, C11, C12, C14
10 F Chip Capacitors
C5750X7S2A106M
Kemet
C13
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
C16
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C17
3 pF Chip Capacitor
ATC100B3R0BT500XT
ATC
R1
5.9 , 1/4 W Chip Resistor
CRCW12065R90FKEA
Vishay
R2, R3
2 K, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
PCB
0.030, r = 2.55
AD255A
Arlon
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
7
Gps
19
Gps, POWER GAIN (dB)
25
D
24
18.8
23
VDD = 28 Vdc, Pout = 6.3 W (Avg.)
IDQ = 450 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
18.6
18.4
22
ACPR
18.2
--42
0
--43
--4
--44
18
17.8
IRL
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
17.6
17.4
1760
1780
1800
1820
1840
PARC
1860
1880
1900
--45
--46
--47
1920
--8
--12
--16
--20
--0.2
--0.4
--0.6
--0.8
--1
PARC (dB)
19.2
IRL, INPUT RETURN LOSS (dB)
26
ACPR (dBc)
19.4
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1805–1880 MHz
--1.2
f, FREQUENCY (MHz)
Figure 9. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 6.3 Watts Avg.
Gps, POWER GAIN (dB)
20
1880 MHz
1840 MHz
1805 MHz
19
ACPR
1840 MHz
18
1880 MHz
1805 MHz
1840 MHz
1880 MHz
16
1
50
--10
40
20
Gps
10
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
15
0
30
1805 MHz
17
60
D
0
100
10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 450 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
D, DRAIN EFFICIENCY (%)
21
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
5
Gain
0
GAIN (dB)
16
--5
14
IRL
12
--10
10
--15
8
1600
1650
1700
1750
1800
1850
1900
1950
IRL (dB)
18
10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 450 mA
--20
2000
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
AFT20P060--4NR3 AFT20P060--4GNR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
9
AFT20P060--4NR3 AFT20P060--4GNR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT20P060--4NR3 AFT20P060--4GNR3
12
RF Device Data
Freescale Semiconductor, Inc.
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
13
AFT20P060--4NR3 AFT20P060--4GNR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2013
 Initial Release of Data Sheet
1
Dec. 2013
 Added part number AFT20P060--4GNR3, p. 1
 Added OM780G--4L isometric, p. 1, and Mechanical Outline, pp. 12--14
AFT20P060--4NR3 AFT20P060--4GNR3
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2013 Freescale Semiconductor, Inc.
AFT20P060--4NR3 AFT20P060--4GNR3
Document Number: AFT20P060--4N
Rev. 1, 12/2013
16
RF Device Data
Freescale Semiconductor, Inc.