Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2T18S162W31S
Rev. 0, 5/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 32 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 1805 to 1880 MHz.
A2T18S162W31SR3
A2T18S162W31GSR3
1800 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
1805 MHz
19.2
33.0
1840 MHz
20.1
1880 MHz
19.6
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
7.1
–34.8
–10
33.9
7.0
–34.6
–16
34.2
6.8
–34.3
–8
Features
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
 Optimized for Doherty Applications
1805–1880 MHz, 32 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780S--2L2LA
A2T18S162W31SR3
NI--780GS--2L2LA
A2T18S162W31GSR3
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Figure 1. Pin Connections
1. Device can operate with the VDD current
supplied through pin 2 or pin 4 alone.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T18S162W31SR3 A2T18S162W31GSR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
–40 to +125
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
CW Operation @ TC = 25C
Derate above 25C
TJ
–40 to +225
C
CW
185
1.0
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.36
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 32 W CW, 28 Vdc, IDQ = 1000 mA, 1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 160 Adc)
VGS(th)
1.2
1.9
2.2
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test)
VGS(Q)
2.1
2.7
3.1
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.6 Adc)
VDS(on)
0.1
0.14
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., f = 1840 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
18.5
20.1
21.5
dB
Drain Efficiency
D
26.0
33.9
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
5.
PAR
6.6
7.0
—
dB
ACPR
—
–34.6
–32.0
dBc
IRL
—
–16
–12
dB
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Part internally matched both on input and output.
Measurements made with devide in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
A2T18S162W31SR3 A2T18S162W31GSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1000 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 169 W CW Output Power
(3 dB Input Overdrive from 129 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
129
—
W

—
–16
—

VBWres
—
110
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.7
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.006
—
dB/C
P1dB
—
0.005
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C) (1)
Table 5. Ordering Information
Device
A2T18S162W31SR3
A2T18S162W31GSR3
Tape and Reel Information
Package
NI--780S--2L2LA
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
NI--780GS--2L2LA
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C9
C15
VDD
VGG
C10
C16
R1
C5
C26
C17
D67437
C18
C2
C11
C4
C12
C3
CUT OUT AREA
C13
C1
C25
C23 C24
C14
A2T18S162W31S/GS
Rev. 5
C6
R2
C19
C7
VGG
C27
C20
C22
VDD
C21
C8
Figure 2. A2T18S162W31SR3 Test Circuit Component Layout
Table 6. A2T18S162W31SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5, C6, C17, C18, C19,
C20, C25
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C2
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C3
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
C4
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C7, C8, C9, C10, C13, C14,
C15, C16, C21, C22
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C11, C12
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C23
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C24
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C26, C27
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26
Multicomp
R1, R2
2.37 , 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D67437
MTL
A2T18S162W31SR3 A2T18S162W31GSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
33
32
16.5
1760
–33.5
–6
–34.5
–35
IRL
1780
–3
–34
ACPR
17
–33
1800
1820 1840 1860
f, FREQUENCY (MHz)
1880
1900
–9
–12
–15
–35.5
1920
–18
–2.7
–2.8
–2.9
–3
–3.1
PARC (dB)
34
IRL, INPUT RETURN LOSS (dB)
17.5
35
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA, Single--Carrier
21 W--CDMA, 3.84 MHz Channel Bandwidth
20.5
D
20
Gps
19.5
Input Signal PAR = 9.9 dB
19
@ 0.01% = Probability on CCDF
18.5
PARC
18
D, DRAIN
EFFICIENCY (%)
36
21.5
–3.2
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 32 Watts Avg.
0
VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 1000 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 1840 MHz
–15
IM3--U
–30
IM3--L
–45
IM7--L
IM7--U
–60
–75
IM5--U
IM5--L
10
1
300
100
TWO--TONE SPACING (MHz)
20.2
0
20
19.8
19.6
19.4
19.2
VDD = 28 Vdc, IDQ = 1000 mA, f = 1840 MHz
Single--Carrier W--CDMA
D
–1
Gps
–2 dB = 25 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
–4
–5
5
15
40
–30
30
–3 dB = 34.4 W
ACPR
–3
–25
35
–1 dB = 17.4 W
–2
45
25
35
Pout, OUTPUT POWER (WATTS)
PARC
45
25
–35
–40
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
20.4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–45
20
–50
15
55
–55
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
1840 MHz
20
1
–10
30
1880 MHz
Gps
1840 MHz
1805 MHz
14
12
50
40
1805 MHz
1840 MHz
1880 MHz
16
0
ACPR
1805 MHz
1880 MHz
18
60
20
10
0
300
10
100
Pout, OUTPUT POWER (WATTS) AVG.
–20
–30
–40
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 1000 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
D
22 PAR = 9.9 dB @ 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
24
–50
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
21
Gain
–3
19
–6
18
–9
17
–12
16
IRL
15
1650
1700
1750
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1000 mA
1800 1850 1900
f, FREQUENCY (MHz)
1950
IRL (dB)
GAIN (dB)
20
–15
2000
–18
2050
Figure 7. Broadband Frequency Response
A2T18S162W31SR3 A2T18S162W31GSR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 1083 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
0.48 – j2.25
0.52 + j2.43
1840
0.59 – j2.30
0.58 + j2.50
1880
0.56 – j2.51
0.57 + j2.65
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.23 – j3.56
18.3
51.6
145
50.1
–9
2.09 – j3.66
18.0
51.5
143
47.5
–9
1.55 – j2.49
18.9
51.8
152
53.1
–9
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
0.48 – j2.25
0.46 + j2.49
2.16 – j3.48
16.3
52.8
189
54.7
–13
1840
0.59 – j2.30
0.51 + j2.56
2.13 – j3.47
16.3
52.7
185
53.5
–13
1880
0.56 – j2.51
0.53 + j2.71
1.71 – j2.74
16.8
52.9
196
57.7
–14
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 1083 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
0.48 – j2.25
0.46 + j2.41
2.96 – j0.53
21.9
49.6
91
61.6
–9
1840
0.59 – j2.30
0.51 + j2.53
2.38 – j0.51
22.0
49.6
91
61.8
–11
1880
0.56 – j2.51
0.53 + j2.66
1.99 – j0.37
22.5
49.3
85
65.0
–14
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.34 – j0.09
20.3
50.4
110
67.7
–17
0.50 + j2.59
2.82 – j0.79
19.8
51.0
125
66.9
–17
0.53 + j2.72
2.42 – j0.87
19.9
51.0
126
68.4
–20
f
(MHz)
Zsource
()
Zin
()
1805
0.48 – j2.25
0.46 + j2.49
1840
0.59 – j2.30
1880
0.56 – j2.51
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
1
0
0
E
–1
IMAGINARY ()
49
49.5
–2
51
50.5
50
–3
P 51.5
–4
–2
56
–3
54
P
–4
52
50.5
–5
1
1.5
2
2.5
3.5
3
REAL ()
4.5
4
–5
5
Figure 8. P1dB Load Pull Output Power Contours (dBm)
1
0
0
22
21.5
IMAGINARY ()
IMAGINARY ()
E
21
–2
20.5
–3
20
P
–4
19.5
18
–5
1
1.5
2
2.5
3.5
3
REAL ()
4
2
1.5
1
–16
2.5
48
3.5
3
REAL ()
4.5
4
–14
5
–8
–12
–1
E
–10
–2
–8
–3
P
–4
19
18.5
46
50
Figure 9. P1dB Load Pull Efficiency Contours (%)
1
–1
58
60
–1
52
54
56
48.5
E
IMAGINARY ()
1
47.5
48
–8
4.5
5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–5
1
1.5
2
2.5
3.5
3
REAL ()
4
4.5
5
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S162W31SR3 A2T18S162W31GSR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
1
1
49
48.5
49.5
0
50.5
66
E
IMAGINARY ()
IMAGINARY ()
50
–1
51
–2
51.5
–3
P
62
1
52
1.5
2
2.5
3.5
3
REAL ()
4.5
4
–5
5
58
56
50
2
1.5
1
2.5
3.5
3
REAL ()
1
–26
20.5
19.5
18.5
–3
18
P
3.5
3
REAL ()
5
4
E
–1
–14
–2
–3
–12
–4
17
16.5
2.5
4.5
–18
–20
P
17.5
–4
2
4
–16
19
1.5
–22
0
–2
1
–24
20
IMAGINARY ()
E
–1
54
52
Figure 13. P3dB Load Pull Efficiency Contours (%)
1
0
60
–3
P
Figure 12. P3dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
64
–2
–4
51.5
–5
E
–1
52
52.5
–4
–5
60
0
4.5
5
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
–5
–10
1
2
1.5
2.5
3.5
3
REAL ()
4
4.5
5
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
A2T18S162W31SR3 A2T18S162W31GSR3
10
RF Device Data
Freescale Semiconductor, Inc.
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
11
A2T18S162W31SR3 A2T18S162W31GSR3
12
RF Device Data
Freescale Semiconductor, Inc.
A2T18S162W31SR3 A2T18S162W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2015
Description
 Initial Release of Data Sheet
A2T18S162W31SR3 A2T18S162W31GSR3
14
RF Device Data
Freescale Semiconductor, Inc.
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E 2015 Freescale Semiconductor, Inc.
A2T18S162W31SR3 A2T18S162W31GSR3
Document
Number:
RF
Device
Data A2T18S162W31S
Rev. 0, 5/2015Semiconductor, Inc.
Freescale
15