Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S7170N
Rev. 2, 2/2014
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S7170NR3
Designed for base station applications with frequencies from 618 to
803 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =
3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency (1)
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz
19.7
37.1
6.2
--38.7
748 MHz
19.5
37.0
6.1
--37.5
768 MHz
19.4
37.9
6.1
--37.8
618--803 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
 Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
 Typical Pout @ 1 dB Compression Point ≃ 182 Watts CW
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Designed for Digital Predistortion Error Correction Systems
 225C Capable Plastic Package
 In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13--inch Reel.
OM--780--2L
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
TC
150
C
TJ
225
C
Symbol
Value (3,4)
Unit
Case Operating Temperature
Operating Junction Temperature
(2,3)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 170 W CW, 28 Vdc, IDQ = 1200 mA
Case Temperature 81C, 50 W CW, 28 Vdc, IDQ = 1200 mA
RJC
0.30
0.37
C/W
1. This part is not recommended for Doherty applications across the 600 to 728 MHz band.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2010, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 355 Adc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., f = 748 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
18.0
19.5
21.0
dB
Drain Efficiency
D
34.0
37.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
5.7
6.1
—
dB
ACPR
—
--37.5
--35.0
dBc
IRL
—
--24
--9
dB
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.7
37.1
6.2
--38.7
--13
748 MHz
19.5
37.0
6.1
--37.5
--24
768 MHz
19.4
37.9
6.1
--37.8
--16
1. Part internally matched both on input and output.
(continued)
MRF8S7170NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 618--803 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
—
182
—
—
16
—
VBWres
—
65
—
MHz
Gain Flatness in 185 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.017
—
dB/C
P1dB
—
0.0048
—
dB/C
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
P1dB
IMDsym
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
W
MHz
MRF8S7170NR3
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C6
C7
C26
C22 C23
C5
C4
C1
R2
C9
C12 C13
C2
C3
CUT OUT AREA
R1
C24 C25
C15
C10 C11
C20 C14
C8
C16 C17
C18 C19
MRF8S7170N
Rev. 0
C21
Figure 1. MRF8S7170NR3 Test Circuit Component Layout
Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead, Short
2743019447
Fair--Rite
C1
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C2
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C3, C4
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C5
47 F, 63 V Electrolytic Capacitor
476KXM063M
Illinois Capacitor
C6
6.8 F, 100 V Chip Capacitor
C4532X7R1H685KT
TDK
C7
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C8, C9
11 pF Chip Capacitors
ATC100B110JT500XT
ATC
C10, C12
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11, C13
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C14
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C15, C16, C17, C22, C23
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C18, C19, C24, C25
10 F, 25 V Chip Capacitors
C5750X7R1E106KT
TDK
C20
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C21, C26
470 F, 63 V Electrolytic Capacitors
477KXM063M
Illinois Capacitor
R1
2K , 1/4 W Chip Resistor
CRCW12062K00FKEA
Vishay
R2
4.3 , 1/4 W Chip Resistor
CRCW12064R30FKEA
Vishay
PCB
0.030, r = 3.5
RF--35
Taconic
MRF8S7170NR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
19.8
19.4
19
18.6
IRL
18.2
17.4
17
710
--11
--37
--37.5
ACPR
720
--7
--36
--36.5
PARC
17.8
--35.5
730
740
750
760
770
--38
790
780
--15
--19
--23
--27
0
--0.5
--1
--1.5
PARC (dB)
Gps, POWER GAIN (dB)
20.2
IRL, INPUT RETURN LOSS (dB)
20.6
D, DRAIN
EFFICIENCY (%)
40
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1200 mA
38
Single--Carrier W--CDMA
3.84
MHz
Channel
Bandwidth
36
D
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF 34
Gps
32
ACPR (dBc)
21
--2
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
--10
--20
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
--30
IM3--U
IM3--L
IM5--U
--40
IM5--L
IM7--U
--50
--60
IM7--L
10
1
100
TWO--TONE SPACING (MHz)
19.5
0
19
18.5
18
17.5
17
--1
ACPR
--1 dB = 42 W
--2 dB = 60 W
D
55
--25
45
Gps
40
--3
VDD = 28 Vdc, IDQ = 1200 mA
PARC
f = 748 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
--20
50
--3 dB = 96 W
--2
60
30
50
70
90
110
--30
--35
--40
35
--45
30
--50
130
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S7170NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps
18
768 MHz
VDD = 28 Vdc, IDQ = 1200 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
16
14
10
0
60
--10
48
748 MHz
728 MHz
36
24
768 MHz
ACPR
12
72
12
748 MHz
728 MHz
D
1
0
300
100
10
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
20
728 MHz 748 MHz 768 MHz
D, DRAIN EFFICIENCY (%)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
22
Gain
--5
18
--10
16
--15
14
--20
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1200 mA
12
10
600
700
650
750
800
IRL (dB)
GAIN (dB)
20
--25
900
850
950
--30
1000
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S7170NR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg.
f
MHz
Zsource

Zload

710
0.876 -- j2.237
1.685 -- j0.887
720
0.910 -- j2.150
1.659 -- j0.776
730
0.942 -- j2.080
1.650 -- j0.683
740
0.970 -- j2.032
1.660 -- j0.610
750
0.981 -- j2.013
1.677 -- j0.563
760
0.961 -- j2.009
1.688 -- j0.550
770
0.911 -- j1.996
1.687 -- j0.551
780
0.843 -- j1.955
1.660 -- j0.557
790
0.787 -- j1.881
1.620 + j0.548
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S7170NR3
RF Device Data
Freescale Semiconductor, Inc.
7
LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle (1)
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
600
129
51.1
178
52.5
658
219
53.4
275
54.4
698
219
53.4
282
54.5
728
229
53.6
310
54.9
748
227
53.5
303
54.8
768
214
53.3
293
54.6
805
219
53.4
275
54.4
1. Output power capability drops rapidly below 658 MHz.
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
f
(MHz)
Zsource

Zload

600
P1dB
2.90 -- j0.40
0.70 -- j2.20
658
P1dB
0.80 -- j1.10
1.20 -- j1.00
698
P1dB
0.70 -- j1.88
1.10 -- j0.97
728
P1dB
0.61 -- j2.32
0.72 -- j1.32
748
P1dB
0.73 -- j2.60
0.81 -- j1.27
768
P1dB
0.72 -- j2.82
0.58 -- j1.46
805
P1dB
0.90 -- j3.20
1.00 -- j1.20
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S7170NR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S7170NR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S7170NR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2010
 Initial Release of Data Sheet
1
Oct. 2010
 Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2.
2
Feb. 2014
 Changed operating frequency from 728–768 MHz to 618–803 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
 Typical Single--Carrier W--CDMA Performance table: added footnote 1, “This part is not recommended for
Doherty applications across the 600 to 728 MHz band,” p. 1
 Table 3, ESD Protection Characteristics: removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
 Fig. 10, Pulsed CW Output Power versus Input Power @ 28 V: updated to reflect additional test data;
added footnote 1, “Output power capability drops rapidly below 658 MHz,” p. 8
MRF8S7170NR3
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2010, 2014 Freescale Semiconductor, Inc.
MRF8S7170NR3
Document
Number:
RF Device
DataMRF8S7170N
Rev.
2, 2/2014Semiconductor, Inc.
Freescale
13