Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9205H
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRFE6S9205HR3
MRFE6S9205HSR3
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
RθJC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
Class 1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
Class B (Minimum)
Charge Device Model (per JESD22 - C101)
Class IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
VGS(th)
1.4
2.1
2.9
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.9
3.7
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.63
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
590
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
491
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21.2
23
dB
Drain Efficiency
ηD
32
34
—
%
PAR
6
6.3
—
dB
ACPR
—
- 39.1
- 37.5
dBc
IRL
—
- 12.5
- 8.5
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
(continued)
MRFE6S9205HR3 MRFE6S9205HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 220 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
MHz
—
10
—
Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg.
GF
—
0.315
—
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout = 200 W CW
Φ
—
0.59
—
°
Delay
—
4.27
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
26.3
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.006
—
dBm/°C
Average Group Delay @ Pout = 200 W CW, f = 880 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
3
VSUPPLY
B1
+
R3
VBIAS
C21
C22
C23
C24
C25
C26
+
R2
C5
C6
C7
Z8
R1
RF
INPUT Z1
Z2
Z3
Z4
Z5
Z6
Z10
Z11
Z12
Z13
Z14 Z15
C27
Z7
Z9
C1
RF
Z17 OUTPUT
Z16
C8 C9
C10 C11
C14
C12 C13
DUT
C2
C3
C4
VSUPPLY
+
C15
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
Z10
0.263″ x 0.065″ Microstrip
0.310″ x 0.065″ Microstrip
0.711″ x 0.120″ Microstrip
0.199″ x 0.120″ Microstrip
0.263″ x 1.020″ x 0.120″ Taper
0.351″ x 1.020″ Microstrip
0.055″ x 1.020″ Microstrip
0.947″ x 0.120″ Microstrip
0.060″ x 0.980″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
C16
C17
C18
C19
C20
0.150″ x 0.980″ Microstrip
0.200″ x 0.980″ x 0.387″ Taper
0.115″ x 0.444″ Microstrip
0.140″ x 0.444″ x 0.110″ Taper
0.770″ x 0.110″ Microstrip
0.442″ x 0.065″ Microstrip
0.274″ x 0.065″ Microstrip
Taconic RF35 0.030″, εr = 3.5
Figure 1. MRFE6S9205HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9205HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair - Rite
C1, C7, C15, C16, C21,
C22, C27
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2, C14
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3, C4
5.1 pF Chip Capacitors
ATC100B5R1JT500XT
ATC
C5
33 μF, 25 V Electrolytic Capacitor
EMVY350ADA330MF55G
Nippon Chemi - Con
C6, C17, C18, C19, C23,
C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C8, C9, C10, C11, C12, C13
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C20, C26
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK255
United Chemi - Con
R1, R3
3.3 Ω, 1/3 W Chip Resistors
CRCW12103R30FKEA
Vishay
R2
2.2 kΩ, 1/4 W Chip Resistor
CRCW12062K20FKEA
Vishay
MRFE6S9205HR3 MRFE6S9205HSR3
4
RF Device Data
Freescale Semiconductor
C26
R3
B1
+
R2
C6
C7
C23 C24
C21
C5
C22
C1
C2
C3
R1
C25
C13
C9
CUT OUT AREA
C4
C14
C12
C27
C10
C8
C11
C15 C16
C19
C17 C18
MRFE6S9205H
Rev. 1
C20
Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
34
21
32
Gps
20
30
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, Single−Carrier
W−CDMA, 3.84 MHz, Channel
Bandwidth, Input PAR = 7.5 dB
@ 0.01% Probability (CCDF)
19
18
17
16
−0.5
0
−1
−4
−1.5
PARC
−2
IRL
15
800
820
840
860
880
900
920
−2.5
960
940
−8
−12
−16
IRL, INPUT RETURN LOSS (dB)
22
ηD, DRAIN
EFFICIENCY (%)
36
ηD
PARC (dB)
Gps, POWER GAIN (dB)
23
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
ηD
44
42
20
Gps
40
VDD = 28 Vdc, Pout = 95 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input PAR = 7.5 dB @ 0.01% Probability (CCDF)
18
17
16
15
−2
−3
PARC
−3.5
IRL
14
800
0
−2.5
−4
820
840
860
880
900
920
940
−5
−10
−15
960
f, FREQUENCY (MHz)
IRL, INPUT RETURN LOSS (dB)
19
PARC (dB)
Gps, POWER GAIN (dB)
21
46
ηD, DRAIN
EFFICIENCY (%)
22
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 95 Watts Avg.
23
0
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2100 mA
Gps, POWER GAIN (dB)
22
1750 mA
21
1400 mA
20
1050 mA
19
18
700 mA
VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
17
VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−10
−20
IDQ = 700 mA
−30
1050 mA
−40
2100 mA
−50
1750 mA
1400 mA
−60
1
10
100
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9205HR3 MRFE6S9205HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100
400
0
−10
VDD = 28 Vdc, Pout = 220 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
IM3−U
−30
IM3−L
IM5−U
IM5−L
−40
IM7−U
−50
IM7−L
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Output Power
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
50
Ideal
0
45
−1
40
−2
35
−1 dB = 51.81 W
−3
−4
Actual
−2 dB = 73.12 W
ηD
−3 dB = 99.2 W
VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
−5
30
40
50
60
70
80
90
30
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
−10
25
20
110
100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
23
70
Gps, POWER GAIN (dB)
25_C
25_C
21
20
60
50
40
85_C
85_C
19
18
30
20
17
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
ηD
16
1
10
100
ηD, DRAIN EFFICIENCY (%)
Gps
22
−30_C
TC = −30_C
10
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
108
22
IDQ = 1400 mA
f = 880 MHz
MTTF (HOURS)
Gps, POWER GAIN (dB)
21
20
107
106
19
VDD = 24 V
32 V
28 V
105
18
0
50
100
150
200
250
300
350
90
110
Pout, OUTPUT POWER (WATTS) CW
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 58 W Avg., and ηD = 34%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
Compressed Output
Signal @ 58 W Pout
0.1
−50
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input PAR = 7.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRFE6S9205HR3 MRFE6S9205HSR3
8
RF Device Data
Freescale Semiconductor
f = 980 MHz
Zload
f = 820 MHz
Zo = 5 Ω
f = 980 MHz
Zsource
f = 820 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f
MHz
Zsource
W
Zload
W
820
1.80 - j4.00
1.75 - j0.73
840
1.88 - j3.76
1.68 - j0.69
860
1.64 - j3.65
1.57 - j0.64
880
1.54 - j3.41
1.44 - j0.58
900
1.35 - j3.13
1.33 - j0.51
920
1.37 - j2.89
1.21 - j0.40
940
1.37 - j2.66
1.07 - j0.27
960
1.39 - j2.53
0.92 - j0.13
980
1.25 - j2.33
0.74 + j0.01
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRFE6S9205HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRFE6S9205HSR3
MRFE6S9205HR3 MRFE6S9205HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2007
Description
• Initial Release of Data Sheet
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
11
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MRFE6S9205HR3 MRFE6S9205HSR3
Document Number: MRFE6S9205H
Rev. 0, 10/2007
12
RF Device Data
Freescale Semiconductor