Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P9210N
Rev. 0, 12/2011
c
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Volts, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout = 63 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
16.5
46.2
6.2
--31.3
940 MHz
16.9
47.7
6.0
--32.6
960 MHz
16.7
47.4
5.8
--34.4
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 253 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 3 dB Compression Point ≃ 290 Watts (2)
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF8P9210NR3
920--960 MHz, 63 W AVG., 28 V
SINGLE W--CDMA
RF POWER LDMOS TRANSISTOR
CASE 2023--02
OM--780--4
PLASTIC
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (3,4)
TJ
225
°C
CW
239
1.74
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P9210NR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 65°C, 63 W CW, 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, 960 MHz
Case Temperature 85°C, 200 W CW(3), 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, 960 MHz
RθJC
0.53
0.35
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 750 mAdc, Measured in Functional Test)
VGS(Q)
2.4
3.2
3.9
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics (4)
Functional Tests (5,6) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout =
63 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15.3
16.8
18.3
dB
Drain Efficiency
ηD
41.0
46.7
—
%
PAR
5.5
5.8
—
dB
ACPR
—
--35.5
--32.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA,
VGSB = 1.2 Vdc, Pout = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
16.5
46.2
6.2
--31.3
940 MHz
16.9
47.7
6.0
--32.6
960 MHz
16.7
47.4
5.8
--34.4
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P9210NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc,
920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
193
—
W
Pout @ 3 dB Compression Point (1)
P3dB
—
290
—
W
—
10
—
IMD Symmetry @ 80 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
64
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.017
—
dB/°C
∆P1dB
—
0.0018
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (2)
MHz
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDSA
C31
C30 C22
C18*
VGGA
C26
C12
Z1
C2
C6
R2
C
C14
C3
C7
R3
C13
R1
C21
CUT OUT AREA
C1
C4
C24
C20
P
C16*
C8*
C9*
C17*
C11
C10
C5
C25
C27
C19*
VGGB
C15*
MRF8P9210N
Rev. 1
C31 C23
C30
VDSB
*C8, C9, C15, C16, C17, C18, and C19 are mounted vertically.
Figure 1. MRF8P9210NR3 Production Test Circuit Component Layout
Table 6. MRF8P9210NR3 Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
C6, C7
30 pF Chip Capacitors
ATC600F300JT250XT
ATC
C8
24 pF Chip Capacitor
ATC100B240JT500XT
ATC
C9
30 pF Chip Capacitor
ATC100B300JT500XT
ATC
C10
4.3 pF Chip Capacitor
ATC600F4R3BT250XT
ATC
C11
3.9 pF Chip Capacitor
ATC600F3R9BT250XT
ATC
C12
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C13
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C14
1.5 pF Chip Capacitor
ATC800B1R5BT500XT
ATC
C15
2.0 pF Chip Capacitor
ATC800B2R0BT500XT
ATC
C16, C17
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C18, C19
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C20, C21
200 pF Chip Capacitors
ATC800B201JT300XT
ATC
C22, C23, C24, C25, C26, C27
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C28, C29, C30, C31
2.2 μF, 100 V Chip Capacitors
GRM32ER72A225KA35L
Murata
R1, R2
2.37 Ω, 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
R3
50 Ω, 10 W Chip Resistor
82--7034
Florida RF Labs
Z1
815--960 MHz Band 90°, 3 dB Hybrid Coupler
GSC362--HYB0900
Soshin
PCB
0.030″, εr = 3.5
RF35A2
Taconic
MRF8P9210NR3
4
RF Device Data
Freescale Semiconductor, Inc.
VGGA
+
C18*
VDSA
C22
+
C26
C12
C2
R2
C
C14
C6
C3
C7
R3
C13
R1
C21
CUT OUT AREA
C1
Z1
C4
C24
C20
P
C16*
C8*
C11
C10
C17*
C9*
C15*
C25
C27
MRF8P9210N
Rev. 1
C19*
VGGB
C5
C23
+
VDSB
+
*C8, C9, C15, C16, C17, C18, and C19 are mounted vertically.
Figure 2. MRF8P9210NR3 Characterization Test Circuit Component Layout
Table 7. MRF8P9210NR3 Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
C6, C7
30 pF Chip Capacitors
ATC600F300JT250XT
ATC
C8
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C9
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C10
4.3 pF Chip Capacitors
ATC600F4R3BT250XT
ATC
C11
3.9 pF Chip Capacitors
ATC600F3R9BT250XT
ATC
C12
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C13
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C14
1.5 pF Chip Capacitors
ATC800B1R5BT500XT
ATC
C15
2.0 pF Chip Capacitors
ATC800B2R0BT500XT
ATC
C16, C17
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C18, C19
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C20, C21
200 pF Chip Capacitors
ATC800B201JT300XT
ATC
C22, C23
220 μF Electrolytic Capacitor
MCGPR100V227M16X26--RH
Multicomp
C24, C25, C26, C27
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1, R2
2.37 Ω, 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
R3
50 Ω, 10 W Chip Resistor
82--7034
Florida RF Labs
Z1
815--960 MHz Band 90°, 3 dB Hybrid Coupler
GSC362--HYB0900
Soshin
PCB
0.030″, εr = 3.5
RF35A2
Taconic
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
40
18
30
16
14
Gps
ACPR
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
12
10
PARC
8
20
--26
0
--28
--0.4
--30
--32
6
--34
4
820
--36
840
860
880
900
920
940
960
980
--0.8
--1.2
--1.6
PARC (dB)
50
ηD
20
Gps, POWER GAIN (dB)
ηD, DRAIN
EFFICIENCY (%)
60
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQA = 750 mA, VGSB = 1.2 Vdc
22
ACPR (dBc)
24
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
--10
VDD = 28 Vdc, Pout = 80 W (PEP), IDQA = 750 mA
VGSB = 1.2 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--L
--30
IM3--U
IM7--U
--40
IM5--L IM5--U
IM7--L
--50
--60
1
10
100
TWO--TONE SPACING (MHz)
18.5
0
18
17.5
17
16.5
16
VDD = 28 Vdc, IDQA = 750 mA
VGSB = 1.2 Vdc, f = 940 MHz
ηD
ACPR
--1 dB = 50 W
--1
--2
--20
50
--25
40
30
--2 dB = 75 W
PARC
--3
20
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
--4
--5
60
30
50
70
--3 dB = 108 W
Gps
90
110
10
0
130
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P9210NR3
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
19
18
960 MHz
940 MHz 50
960 MHz
920 MHz
40
Gps
ACPR
17
920 MHz
16
30
20
940 MHz
960 MHz
15
14
60
ηD
10
940 MHz
920 MHz
1
10
0
--10
0
300
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
18
Gain
GAIN (dB)
16
14
12
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 750 mA
VGSB = 1.2 Vdc
10
8
860
900
880
920
940
960
1000
980
1020
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, IDQA = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
920
2.22 -- j5.54
9.84 -- j1.33
52.0
159
55.7
52.9
195
59.0
940
2.76 -- j6.09
9.66 + j0.60
52.0
159
55.9
52.9
195
59.7
960
2.82 -- j6.71
8.91 + j1.96
51.9
155
55.9
52.8
191
60.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2.22 -- j5.54
3.18 -- 3.03
49.6
91
69.7
50.3
107
72.8
2.76 -- j6.09
3.53 -- j3.08
49.5
89
69.6
50.2
105
72.8
2.82 -- j6.71
3.34 -- j3.56
48.8
76
68.7
49.4
87
71.3
f
(MHz)
Zsource
(Ω)
920
940
960
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
MRF8P9210NR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8P9210NR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2011
Description
• Initial Release of Data Sheet
MRF8P9210NR3
12
RF Device Data
Freescale Semiconductor, Inc.
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directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2011. All rights reserved.
MRF8P9210NR3
Document
Number:
RF
Device
Data MRF8P9210N
Rev. 0, 12/2011
Freescale
Semiconductor, Inc.
13