Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 920 MHz 16.5 46.2 6.2 --31.3 940 MHz 16.9 47.7 6.0 --32.6 960 MHz 16.7 47.4 5.8 --34.4 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 253 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 3 dB Compression Point ≃ 290 Watts (2) Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • 225°C Capable Plastic Package • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF8P9210NR3 920--960 MHz, 63 W AVG., 28 V SINGLE W--CDMA RF POWER LDMOS TRANSISTOR CASE 2023--02 OM--780--4 PLASTIC RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (3,4) TJ 225 °C CW 239 1.74 W W/°C CW Operation @ TC = 25°C Derate above 25°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Continuous use at maximum temperature will affect MTTF. 4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8P9210NR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 65°C, 63 W CW, 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, 960 MHz Case Temperature 85°C, 200 W CW(3), 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, 960 MHz RθJC 0.53 0.35 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 750 mAdc, Measured in Functional Test) VGS(Q) 2.4 3.2 3.9 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) 0.1 0.24 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics (4) Functional Tests (5,6) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout = 63 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15.3 16.8 18.3 dB Drain Efficiency ηD 41.0 46.7 — % PAR 5.5 5.8 — dB ACPR — --35.5 --32.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 920 MHz 16.5 46.2 6.2 --31.3 940 MHz 16.9 47.7 6.0 --32.6 960 MHz 16.7 47.4 5.8 --34.4 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration. (continued) MRF8P9210NR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc, 920--960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 193 — W Pout @ 3 dB Compression Point (1) P3dB — 290 — W — 10 — IMD Symmetry @ 80 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 64 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 63 W Avg. GF — 0.4 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.017 — dB/°C ∆P1dB — 0.0018 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (2) MHz 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8P9210NR3 RF Device Data Freescale Semiconductor, Inc. 3 VDSA C31 C30 C22 C18* VGGA C26 C12 Z1 C2 C6 R2 C C14 C3 C7 R3 C13 R1 C21 CUT OUT AREA C1 C4 C24 C20 P C16* C8* C9* C17* C11 C10 C5 C25 C27 C19* VGGB C15* MRF8P9210N Rev. 1 C31 C23 C30 VDSB *C8, C9, C15, C16, C17, C18, and C19 are mounted vertically. Figure 1. MRF8P9210NR3 Production Test Circuit Component Layout Table 6. MRF8P9210NR3 Production Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5 100 pF Chip Capacitors ATC600F101JT250XT ATC C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC C8 24 pF Chip Capacitor ATC100B240JT500XT ATC C9 30 pF Chip Capacitor ATC100B300JT500XT ATC C10 4.3 pF Chip Capacitor ATC600F4R3BT250XT ATC C11 3.9 pF Chip Capacitor ATC600F3R9BT250XT ATC C12 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C13 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C14 1.5 pF Chip Capacitor ATC800B1R5BT500XT ATC C15 2.0 pF Chip Capacitor ATC800B2R0BT500XT ATC C16, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C18, C19 47 pF Chip Capacitors ATC100B470JT500XT ATC C20, C21 200 pF Chip Capacitors ATC800B201JT300XT ATC C22, C23, C24, C25, C26, C27 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C28, C29, C30, C31 2.2 μF, 100 V Chip Capacitors GRM32ER72A225KA35L Murata R1, R2 2.37 Ω, 1/4 W Chip Resistors CRCW12062R37FNEA Vishay R3 50 Ω, 10 W Chip Resistor 82--7034 Florida RF Labs Z1 815--960 MHz Band 90°, 3 dB Hybrid Coupler GSC362--HYB0900 Soshin PCB 0.030″, εr = 3.5 RF35A2 Taconic MRF8P9210NR3 4 RF Device Data Freescale Semiconductor, Inc. VGGA + C18* VDSA C22 + C26 C12 C2 R2 C C14 C6 C3 C7 R3 C13 R1 C21 CUT OUT AREA C1 Z1 C4 C24 C20 P C16* C8* C11 C10 C17* C9* C15* C25 C27 MRF8P9210N Rev. 1 C19* VGGB C5 C23 + VDSB + *C8, C9, C15, C16, C17, C18, and C19 are mounted vertically. Figure 2. MRF8P9210NR3 Characterization Test Circuit Component Layout Table 7. MRF8P9210NR3 Characterization Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5 100 pF Chip Capacitors ATC600F101JT250XT ATC C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC C8 24 pF Chip Capacitors ATC100B240JT500XT ATC C9 30 pF Chip Capacitors ATC100B300JT500XT ATC C10 4.3 pF Chip Capacitors ATC600F4R3BT250XT ATC C11 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC C12 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C13 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C14 1.5 pF Chip Capacitors ATC800B1R5BT500XT ATC C15 2.0 pF Chip Capacitors ATC800B2R0BT500XT ATC C16, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C18, C19 47 pF Chip Capacitors ATC100B470JT500XT ATC C20, C21 200 pF Chip Capacitors ATC800B201JT300XT ATC C22, C23 220 μF Electrolytic Capacitor MCGPR100V227M16X26--RH Multicomp C24, C25, C26, C27 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata R1, R2 2.37 Ω, 1/4 W Chip Resistors CRCW12062R37FNEA Vishay R3 50 Ω, 10 W Chip Resistor 82--7034 Florida RF Labs Z1 815--960 MHz Band 90°, 3 dB Hybrid Coupler GSC362--HYB0900 Soshin PCB 0.030″, εr = 3.5 RF35A2 Taconic MRF8P9210NR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 40 18 30 16 14 Gps ACPR Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 12 10 PARC 8 20 --26 0 --28 --0.4 --30 --32 6 --34 4 820 --36 840 860 880 900 920 940 960 980 --0.8 --1.2 --1.6 PARC (dB) 50 ηD 20 Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%) 60 VDD = 28 Vdc, Pout = 63 W (Avg.) IDQA = 750 mA, VGSB = 1.2 Vdc 22 ACPR (dBc) 24 --2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. --10 VDD = 28 Vdc, Pout = 80 W (PEP), IDQA = 750 mA VGSB = 1.2 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz --20 IM3--L --30 IM3--U IM7--U --40 IM5--L IM5--U IM7--L --50 --60 1 10 100 TWO--TONE SPACING (MHz) 18.5 0 18 17.5 17 16.5 16 VDD = 28 Vdc, IDQA = 750 mA VGSB = 1.2 Vdc, f = 940 MHz ηD ACPR --1 dB = 50 W --1 --2 --20 50 --25 40 30 --2 dB = 75 W PARC --3 20 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --4 --5 60 30 50 70 --3 dB = 108 W Gps 90 110 10 0 130 --30 --35 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --40 --45 --50 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P9210NR3 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 19 18 960 MHz 940 MHz 50 960 MHz 920 MHz 40 Gps ACPR 17 920 MHz 16 30 20 940 MHz 960 MHz 15 14 60 ηD 10 940 MHz 920 MHz 1 10 0 --10 0 300 100 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 1.2 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 18 Gain GAIN (dB) 16 14 12 VDD = 28 Vdc Pin = 0 dBm IDQA = 750 mA VGSB = 1.2 Vdc 10 8 860 900 880 920 940 960 1000 980 1020 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 9. Single--Carrier W--CDMA Spectrum MRF8P9210NR3 RF Device Data Freescale Semiconductor, Inc. 7 VDD = 28 Vdc, IDQA = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB P3dB f (MHz) Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 920 2.22 -- j5.54 9.84 -- j1.33 52.0 159 55.7 52.9 195 59.0 940 2.76 -- j6.09 9.66 + j0.60 52.0 159 55.9 52.9 195 59.7 960 2.82 -- j6.71 8.91 + j1.96 51.9 155 55.9 52.8 191 60.1 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency P1dB P3dB Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 2.22 -- j5.54 3.18 -- 3.03 49.6 91 69.7 50.3 107 72.8 2.76 -- j6.09 3.53 -- j3.08 49.5 89 69.6 50.2 105 72.8 2.82 -- j6.71 3.34 -- j3.56 48.8 76 68.7 49.4 87 71.3 f (MHz) Zsource (Ω) 920 940 960 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 11. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning MRF8P9210NR3 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8P9210NR3 RF Device Data Freescale Semiconductor, Inc. 9 MRF8P9210NR3 10 RF Device Data Freescale Semiconductor, Inc. MRF8P9210NR3 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2011 Description • Initial Release of Data Sheet MRF8P9210NR3 12 RF Device Data Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P9210NR3 Document Number: RF Device Data MRF8P9210N Rev. 0, 12/2011 Freescale Semiconductor, Inc. 13