技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和发射极控制二极管 PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlleddiode 初步数据/PreliminaryData VCES = 1700V IC nom = 650A / ICRM = 1300A 典型应用 • 大功率变流器 • 电机传动 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • Windturbines 电气特性 • 高短路能力 • 高冲击电流能力 • 高电流密度 • Tvjop=150°C • VCEsat带正温度系数 ElectricalFeatures • Highshort-circuitcapability • Highsurgecurrentcapability • Highcurrentdensity • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient 机械特性 • 4kV交流1分钟绝缘 • 封装的CTI>400 • 高爬电距离和电气间隙 • 集成NTC温度传感器 • 符合RoHS • 预涂导热介质 MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearancedistances • IntegratedNTCtemperaturesensor • RoHScompliant • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 175°C IC nom 650 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1300 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 650 A, VGE = 15 V IC = 650 A, VGE = 15 V IC = 650 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 2,00 2,35 2,45 2,45 2,90 3,00 V V V 5,80 6,40 V 栅极阈值电压 Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 7,00 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 2,3 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 54,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,70 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 650 A, VCE = 900 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,8 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,20 0,55 0,60 0,60 µs µs µs 0,09 0,11 0,12 µs µs µs 1,00 1,25 1,30 µs µs µs 0,29 0,49 0,57 µs µs µs Eon 205 300 320 mJ mJ mJ IC = 650 A, VCE = 900 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 2,7 Ω Tvj = 150°C Eoff 140 205 230 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 2700 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJH Tvj op preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 2 54,3 K/kW -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C 最大损耗功率 Maximumpowerdissipation Tvj = 125°C VRRM 1700 V IF 650 A IFRM 1300 A I²t 70,5 kA²s PRQM 650 kW 特征值/CharacteristicValues min. typ. max. VF 1,85 1,95 1,95 2,25 2,35 2,35 IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 695 760 805 A A A 恢复电荷 Recoveredcharge IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 160 265 310 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 76,0 135 160 mJ mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 正向电压 Forwardvoltage IF = 650 A, VGE = 0 V IF = 650 A, VGE = 0 V IF = 650 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op V V V 105 K/kW -40 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 3 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 33,0 33,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 19,0 19,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 18 nH RCC'+EE' 0,30 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 端子联接扭距 Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M 重量 Weight G Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 4 max. LsCE Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 3,00 125 °C 125 °C 6,00 Nm 1,8 - 2,1 Nm 8,0 - 10 Nm 825 g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 1300 1300 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 1000 1000 900 900 800 800 700 700 IC [A] 1100 IC [A] 1100 600 600 500 500 400 400 300 300 200 200 100 100 0 0,0 0,5 1,0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 1200 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.8Ω,RGoff=2.7Ω,VCE=900V 1300 550 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 500 1100 450 1000 400 900 350 700 E [mJ] IC [A] 800 600 500 300 250 200 400 150 300 100 200 50 100 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 5 0 200 400 600 800 IC [A] 1000 1200 5,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=650A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 1000 100 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 900 ZthJH : IGBT 800 700 10 ZthJH [K/kW] E [mJ] 600 500 400 1 300 200 i: 1 2 3 4 ri[K/kW]: 4,95 13,5 24,1 11,7 τi[s]: 0,000949 0,0278 0,105 0,664 100 0 0 2 4 6 8 10 12 0,1 0,001 14 0,01 0,1 t [s] RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.7Ω,Tvj=150°C 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1400 1300 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 1200 1100 1000 1000 900 800 IF [A] IC [A] 800 600 700 600 500 400 400 300 200 200 100 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.8Ω,VCE=900V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=650A,VCE=900V 220 220 Erec, Tvj = 150°C Erec, Tvj = 125°C 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 200 400 Erec, Tvj = 150°C Erec, Tvj = 125°C 200 E [mJ] E [mJ] 200 600 IF [A] 800 1000 0 1200 0 2 4 6 8 10 12 14 RG [Ω] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 1000 ZthJH : Diode 1400 IR, Modul 1200 1000 IR [A] ZthJH [K/kW] 100 800 600 10 400 i: 1 2 3 4 ri[K/kW]: 12,1 34 43,9 15,1 τi[s]: 0,000926 0,0278 0,111 0,766 1 0,001 0,01 0,1 t [s] 1 200 0 10 preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 7 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TNTC [°C] 120 140 160 preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines 154 restricted area for Thermal Interface Material 60 6,5 1 36 0,2 screwing depth max. 16 (4x) 18 0,2 (2x) 22 +- 0,6 0 3 0,1 36,5 0,3 screwing depth max. 8 (7x) A 172 0,5 150 113 103 recommeded design height lower side PCB to baseplate 92 76 58 8 0,1 (7x) 25,9 0,25 + 5,5 - 00,1 0,25 A B C (10x) 10 20 0,1 37,7 0,25 B recommeded design height lower side bus bar to baseplate 28 0,1 5,5 17 0,1 0,6 A B C (4x) C 39 64 78 117 156 preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 9 M8 5,5 4,3 24,5 0,5 14 39 25 21,5 0,3 10 45,5 0,5 21 0,3 M4 0,6 A B C (7X) 12,3 0,3 89 0,5 73 0,4 A (7x) 1 MAX 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF650R17IE4P 初步数据 PreliminaryData Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. AllRightsReserved. 使用条件和条款 重要提示 本文档所提供的任何信息绝不应当被视为针对任何条件或者品质而做出的保证（质量保证）。英飞凌对于本文档中所提及的任何事例、 提示或者任何特定数值及/或任何关于产品应用方面的信息均在此明确声明其不承担任何保证或者责任，包括但不限于其不侵犯任何 第三方知识产权的保证均在此排除。 此外，本文档所提供的任何信息均取决于客户履行本文档所载明的义务和客户遵守适用于客户产品以及与客户对于英飞凌产品的应用 所相关的任何法律要求、规范和标准。 本文档所含的数据仅供经过专业技术培训的人员使用。客户自身的技术部门有义务对于产品是否适宜于其预期的应用和针对该等应用 而言本文档中所提供的信息是否充分自行予以评估。 如需产品、技术、交付条款和条件以及价格等进一步信息，请向离您最近的英飞凌科技办公室接洽（www.infineon.com）。 警告事项 由于技术所需产品可能含有危险物质。如需了解该等物质的类型，请向离您最近的英飞凌科技办公室接洽。 除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外，英飞凌科技的产品不应当被用于任何一项一旦产品失效 或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。 Terms&Conditionsofusage IMPORTANTNOTICE Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany applicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologies incustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin thisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon Technologiesoffice(www.infineon.com). WARNINGS Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour nearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof theusethereofcan reasonablybeexpectedtoresultinpersonalinjury. preparedby:SM dateofpublication:2016-03-17 approvedby:RN revision:V2.0 10