技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 62mmC-Series模块采用第三代沟槽栅/场终止IGBT和HE型发射机控制二极管 62mmC-SeriesmodulewithTrench/FieldstopIGBT3andEmitterControlledHEdiode 初步数据/PreliminaryData VCES = 1200V IC nom = 300A / ICRM = 600A 典型应用 • 大功率变流器 • 电机传动 • UPS系统 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • UPSsystems • Windturbines 电气特性 • 低开关损耗 • 无与伦比的坚固性 • VCEsat带正温度系数 ElectricalFeatures • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient 机械特性 • 封装的CTI>400 • 高爬电距离和电气间隙 • 高功率密度 • 绝缘的基板 • 标准封装 • 预涂导热介质 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 150°C IC nom 300 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues min. typ. max. 1,70 1,90 2,15 V V 5,80 6,50 V 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 2,80 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 2,5 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 21,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,85 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Tvj = 25°C Tvj = 125°C VCE sat VGEth 5,00 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C td on 0,16 0,17 µs µs 上升时间(电感负载) Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C tr 0,04 0,045 µs µs 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C td off 0,45 0,52 µs µs 下降时间(电感负载) Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C tf 0,10 0,16 µs µs 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 6000 A/µs RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C Eon 16,5 25,0 mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 4500 V/µs RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C Eoff 24,5 37,0 mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt 1200 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 125°C ISC RthJH Tvj op preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 2 0,116 K/W -40 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 1200 V IF 300 A IFRM 600 A I²t 19000 A²s 特征值/CharacteristicValues min. typ. max. 1,65 1,65 2,15 正向电压 Forwardvoltage IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V IRM 210 270 A A 恢复电荷 Recoveredcharge IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Qr 30,0 56,0 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Erec 14,0 26,0 mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 3 V V 0,183 K/W -40 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 29,0 23,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 23,0 11,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 20 nH RCC'+EE' 0,70 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 重量 Weight G Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 4 max. LsCE Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 340 125 °C 125 °C 6,00 Nm 5,0 Nm g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125°C 600 600 500 500 400 400 IC [A] IC [A] Tvj = 25°C Tvj = 125°C 300 300 200 200 100 100 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=600V 600 80 Tvj = 25°C Tvj = 125°C Eon, Tvj = 125°C Eoff, Tvj = 125°C 70 500 60 400 E [mJ] IC [A] 50 300 40 30 200 20 100 10 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 5 0 100 200 300 IC [A] 400 500 600 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=300A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 150 1 Eon, Tvj = 125°C Eoff, Tvj = 125°C 135 ZthJH : IGBT 120 105 0,1 ZthJH [K/W] E [mJ] 90 75 60 0,01 45 30 i: 1 2 3 4 ri[K/W]: 0,0082 0,0459 0,0435 0,0184 τi[s]: 0,000803 0,0333 0,135 1,045 15 0 0 4 8 12 RG [Ω] 16 20 0,001 0,001 24 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.4Ω,Tvj=125°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 700 600 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C 600 500 500 400 IF [A] IC [A] 400 300 300 200 200 100 100 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=2.4Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=300A,VCE=600V 35 32 Erec, Tvj = 125°C Erec, Tvj = 125°C 28 30 24 25 20 E [mJ] E [mJ] 20 16 15 12 10 8 5 0 4 0 100 200 300 IF [A] 400 500 0 600 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 1 ZthJH [K/W] ZthJH : Diode 0,1 i: 1 2 3 4 ri[K/W]: 0,014 0,0702 0,0722 0,0266 τi[s]: 0,00068 0,0258 0,106 0,825 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 7 0 4 8 12 16 RG [Ω] 20 24 28 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines In fin e o n preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.1 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF300R12KT3P_E 初步数据 PreliminaryData Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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